BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features BVDSS RDS(ON) -50V 10 @ VGS = -5V ID TA = +25C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). e3 Weight: 0.006 grams (Approximate) D SOT323 D G G S S Top View Top View Equivalent Circuit Ordering Information (Notes 4 & 5) Part Number BSS84W-7-F BSS84WQ-7-F Notes: Compliance Standard Automotive Case SOT323 SOT323 Packaging 3000 / Tape & Reel 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K84 = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) Shanghai A/T Site Date Code Key Year Code Month Code 2012 Z Jan 1 ~ ~ Feb 2 BSS84W Document number: DS30205 Rev. 16 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 5 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D March 2018 (c) Diodes Incorporated BSS84W Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit VDSS -50 V V Drain-Source Voltage Drain-Gate Voltage (Note 6) VDGR -50 Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 6) Continuous ID -130 mA IDM -1 A Symbol Value Unit PD 200 mW RJA 625 C/W TJ, TSTG -55 to +150 C Pulsed Drain Current (Note 6) Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic (@TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Test Condition BVDSS -50 -75 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 -2 -100 A A nA VDS = -50V, VGS = 0V, TJ = +25C VDS = -50V, VGS = 0V, TJ = +125C VDS = -25V, VGS = 0V, TJ = +25C Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(TH) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(ON) 6 10 VGS = -5V, ID = -0.1A gFS 0.05 S VDS = -25V, ID = -0.1A Input Capacitance Ciss 45 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 12 pF tD(ON) 10 ns tD(OFF) 18 ns OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 7) Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated's suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. BSS84W Document number: DS30205 Rev. 16 - 2 2 of 5 www.diodes.com March 2018 (c) Diodes Incorporated BSS84W -600 250 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) TA = 25C VGS = -5V -500 200 -4.5V -400 150 -300 100 -3.5V -200 50 0 0 -100 -2.5V 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE ( (C)) Fig. 1 Max Power Dissipation vs. Ambient Temperature -1 -2 -3 -5 -4 VDS, DRAIN SOURCE (V) (V) VDS, DRAIN SOURCE VOLTAGE Fig. 2 Drain Source Current vs.Drain Source Voltage -1.0 TA = -55C -0.6 TA = 25C TA = 125C -0.4 -0.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 -0.8 ID , DRAIN CURRENT (A) -3.0V -0.0 0 9 8 7 6 5 4 3 2 TA = 125C 1 0 -1 -2 -3 -5 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 3 Drain Current vs. Gate Source Voltage TA = 25C 0 -2 -4 -5 -3 VGS, GATE-SOURCE (V) (V) VGS, GATE-SOURCE VOLTAGE Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 15 12 RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () VGS = -10V ID = -0.13A 9 6 3 20.0 V GS = -3.5V VGS = -3V V GS = -4.5V 15.0 VGS = -5V VGS = -4V V GS = -6V 10.0 5.0 VGS = -8V VGS = -10V 0 -50 0 -25 50 75 100 125 150 25 (C)) TJ, JUNCTION TEMPERATURE ( Fig. 5 On-Resistance vs. Junction Temperature BSS84W Document number: DS30205 Rev. 16 - 2 0.0 -0.0 3 of 5 www.diodes.com -0.6 -0.8 -0.4 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 1.0 March 2018 (c) Diodes Incorporated BSS84W Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 D SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm A2 c A1 a e L b E E1 e1 F Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT323 X Y Y1 Dimensions C G X Y Y1 G Value (in mm) 0.650 1.300 0.470 0.600 2.500 C BSS84W Document number: DS30205 Rev. 16 - 2 4 of 5 www.diodes.com March 2018 (c) Diodes Incorporated BSS84W IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2018, Diodes Incorporated www.diodes.com BSS84W Document number: DS30205 Rev. 16 - 2 5 of 5 www.diodes.com March 2018 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: BSS84WQ-7-F