LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
LM1973 µPot 3-Channel 76dB Audio Attenuator with Mute
Check for Samples: LM1973
1FEATURES DESCRIPTION
The LM1973 is a digitally controlled 3-channel 76dB
2• 3-Wire Serial Interface audio attenuator fabricated on a CMOS process.
• Daisy-Chain Capability Each channel has attenuation steps of 0.5dB from
• 104dB Mute Attenuation 0dB–15.5dB, 1.0dB steps from 16dB–47dB, and
2.0dB steps from 48dB– 76dB, with a mute function
• Pop and Click Free Attenuation Changes attenuating 104dB. Its logarithmic attenuation curve
can be customized through software to fit the desired
APPLICATIONS application.
• Automated Studio Mixing Consoles The performance of a μPot is demonstrated through
• Music Reproduction Systems its excellent Signal-to-Noise Ratio, extremely low
• Sound Reinforcement Systems (THD+N), and high channel separation. Each μPot
contains a mute function that disconnects the input
• Electronic Music (MIDI) signal from the output, providing a minimum
• Personal Computer Audio Control attenuation of 96dB. Transitions between any
attenuation settings are pop free.
KEY SPECIFICATIONS The LM1973's 3-wire serial digital interface is TTL
• Total Harmonic Distortion + Noise: 0.003 % and CMOS compatible; receiving data that selects a
(max) channel and the desired attenuation level. The Data-
Out pin of the LM1973 allows multiple μPots to be
• Frequency response: 100 kHz (−3dB) (min) daisy-chained together, reducing the number of
• Attenuation range (excluding mute): 76 dB enable and data lines to be routed for a given
(typ) application.
• Differential attenuation: ±0.25 dB (max)
• Signal-to-noise ratio (ref. 4 Vrms): 110 dB
(min)
• Channel separation: 110 dB (typ)
TYPICAL APPLICATION CONNECTION DIAGRAM
Top View
Figure 1. Typical Audio Attenuator
Application Circuit
Figure 2. PDIP and SOIC Packages
See Package Numbers NFH0020A and DW0020B
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1994–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1)(2)(3)
Supply Voltage (VDD–VSS) 15V
Voltage at Any Pin VSS −0.2V to VDD + 0.2V
Power Dissipation (4) 150 mW
ESD Susceptibility (5) 1800V
Junction Temperature 150°C
Soldering Information NFH0020A Package (10 sec.) +260°C
Storage Temperature −65°C to +150°C
(1) All voltages are measured with respect to GND (pins 1, 3, 5, 14, 17), unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional. Electrical Characteristics state DC and AC electrical specifications under particular test conditions and
specific performance limits. This assumes that the device is within the Operating Ratings. The typical value is a good indication of
device performance.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX,θJA, and the ambient temperature
TA. The maximum allowable power dissipation is PD = (TJMAX −TA)/θJA or the number given in the Absolute Maximum Ratings,
whichever is lower. For the LM1973N, TJMAX = +150°C, and the typical junction-to-ambient thermal resistance, when board mounted, is
65°C/W.
(5) Human body model, 100 pF discharged through a 1.5 kΩresistor.
OPERATING RATINGS (1)(2)
TMIN TATMAX
Temperature Range TMIN ≤TA≤TMAX 0°C ≤TA≤+70°C
Supply Voltage (VDD −VSS) 4.5V to 12V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional. Electrical Characteristics state DC and AC electrical specifications under particular test conditions and
specific performance limits. This assumes that the device is within the Operating Ratings. The typical value is a good indication of
device performance.
(2) All voltages are measured with respect to GND (pins 1, 3, 5, 14, 17), unless otherwise specified.
2Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS (1)(2)
The following specifications apply for all channels with VDD = +6V, VSS =−6V, VIN = 5.5 Vpk, and f = 1 kHz, unless otherwise
specified. Limits apply for TA= 25°C. Digital inputs are TTL and CMOS compatible. LM1973 Units
Parameter Test Conditions (Limits)
Typical (3) Limit (4)
ISSupply Current Inputs are AC Grounded 3 5 mA (max)
THD+N Total Harmonic Distortion plus Noise VIN = 0.5 Vpk at 0dB Attenuation 0.0008 0.003 % (max)
XTalk Crosstalk (Channel Separation) 0dB Attenuation for VIN 110 dB
(5) VCH measured at −76dB
SNR Signal-to-Noise Ratio Inputs are AC Grounded
at −12dB Attenuation 120 110 dB (min)
A-Weighted
AMMute Attenuation 104 96 dB (min)
Attenuation Step Size Error 0dB to −16dB ±0.05 dB (max)
−17dB to −48dB ±0.1 dB (max)
−49dB to −76dB ±0.25 dB (max)
Absolute Attenuation Error Attenuation at 0dB 0.01 0.5 dB (min)
Attenuation at −20dB 19.8 19.0 dB (min)
Attenuation at −40dB 39.5 38.5 dB (min)
Attenuation at −60dB 59.3 58.0 dB (min)
Attenuation at −76dB 74.5 73.0 dB (min)
Channel-to-Channel Attenuation Attenuation at 0dB, −20dB, −40dB, ±0.5 dB (max)
−60dB
Tracking Error Attenuation at −76dB ±0.75 dB (max)
ILEAK Analog Input Leakage Current Inputs are AC Grounded 10.0 100 nA (max)
RIN AC Input Impedance Pins 2, 4, 18, VIN = 1.0 Vpk, f = 1 kHz 40 20 kΩ(min)
60 kΩ(max)
IIN Input Current at Pins 9, 10, 11 at 0V < VIN < 5V 1.0 ±100 nA (max)
fCLK Clock Frequency 3 2 MHz (max)
VIH High-Level Input Voltage at Pins 9, 10, 11 2.0 V (min)
VIL Low-Level Input Voltage at Pins 9, 10, 11 0.8 V (max)
Data-Out Levels (Pin 12) VDD = 6V, VSS = 0V 0.1 V (max)
5.9 V (min)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional. Electrical Characteristics state DC and AC electrical specifications under particular test conditions and
specific performance limits. This assumes that the device is within the Operating Ratings. The typical value is a good indication of
device performance.
(2) All voltages are measured with respect to GND (pins 1, 3, 5, 14, 17), unless otherwise specified.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to TI's AOQL (Average Output Quality Level).
(5) At the present time the Crosstalk measurement is specified as a typical only, which is due to a hardware limitation of the automated test
equipment.
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM1973
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
TEST CIRCUIT DIAGRAMS
Figure 3. Timing Diagram
PIN DESCRIPTIONS
Signal Ground (1, 5, 17): Each input has its own independent ground, GND1, GND2, and GND3.
Signal Input (2, 4, 18): There are 3 independent signal inputs, IN1, IN2, and IN3.
Signal Output (6, 16, 20): There are 3 independent signal outputs, OUT1, OUT2, and OUT3.
Voltage Supply (13, 15):
Voltage Supply (7, 19): Negative voltage supply pins, VSS1 and VSS2. To be tied to ground in a single supply
configuration.
AC Ground (3, 14): These two pins are not physically connected to the die in any way (i.e., No bondwires).
These pins must be AC grounded to prevent signal coupling between any of the pins nearby. Pin 14
should be connected to pins 13 and 15 for ease of wiring and the best isolation.
Logic Ground (8): Digital signal ground for the interface lines; CLOCK, LOAD/SHIFT, DATA-IN and DATA-OUT.
Clock (9): The clock input accepts a TTL or CMOS level signal. The clock input is used to load data into the
internal shift register on the rising edge of the input clock waveform.
Load/Shift (10): The load/shift input accepts a TTL or CMOS level signal. This is the enable pin of the device,
allowing data to be clocked in while this input is low (0V).
Data-In (11): The data-in input accepts a TTL or CMOS level signal. This pin is used to accept serial data from a
microcontroller that will be latched and decoded to change a channel's attenuation level.
Data-Out (12): This pin is used in daisy-chain mode where more than one μPot is controlled via the same data
line. As the data is clocked into the chain from the μC, the preceding data in the shift register is shifted out
the DATA-OUT pin to the next μPot in the chain or to ground if it is the last μPot in the chain. The
LOAD/SHIFT line goes high once all of the new data has been shifted into each of its respective registers.
4Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Current vs
Supply Voltage Temperature
Figure 4. Figure 5.
Noise Floor Spectrum by FFT THD
Amplitude vs
vs Freq by FFT
Frequency VDD −VSS = 12V
Figure 6. Figure 7.
THD
vs
VOUT at
1 kHz by FFT
VDD −VSS = 12V Crosstalk Test
Figure 8. Figure 9.
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LM1973
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD + N vs
Frequency and Amplitude FFT of 1 kHz THD
Figure 10. Figure 11.
THD + N
vs
Amplitude
f = 20 Hz, VDD = ±6V
FFT of 20 kHz THD VIN into CH1 at 0 dB
Figure 12. Figure 13.
THD + N THD + N
vs vs
Amplitude Amplitude
f = 1 kHz, VDD = ±6V f = 20 kHz, VDD = ±6V
VIN into CH1 at 0 dB VIN into CH1 at 0 dB
Figure 14. Figure 15.
6Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
APPLICATION INFORMATION
ATTENUATION STEP SCHEME
The fundamental attenuation step scheme for the LM1973 μPot is shown in Figure 16. This attenuation step
scheme, however, can be changed through programming techniques to fit different application requirements.
One such example would be a constant logarithmic attenuation scheme of 2dB steps for a panning function as
shown in Figure 18. The only restriction to the customization of attenuation schemes are the given attenuation
levels and their corresponding data bits shown in Table 1. The device will change attenuation levels only when a
channel address is recognized. When recognized, the attenuation level will be changed corresponding to the
data bits shown in Table 1. As shown in Figure 19, an LM1973 can be configured with a mono audio signal level
control and with a panning control which separates the mono signal into left and right channels. This circuit may
utilize the fundamental attenuation scheme of the LM1973 for the level control, but also possess a constant 2dB
panning control for the left and right channels as stated earlier.
LM1973 Channel Attenuation
vs Digital Step Value
Figure 16.
LM1973 Channel Attenuation
vs Digital Step Value
(Programmed 1.0dB Steps)
Figure 17. LM1973 1.0dB and 2.0dB
Attenuation Step Scheme
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: LM1973
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
LM1973 Channel Attenuation
vs Digital Step Value
(Programmed 2.0dB Steps)
Figure 18. LM1973 2.0dB Attenuation Step Scheme
Figure 19. Mono Level Control with Panning Circuit
INPUT IMPEDANCE
The input impedance of a μPot is constant at a nominal 40 kΩ. To eliminate any unwanted DC components from
propagating through the device it is common to use 1 μF input coupling caps. This is not necessary, however, if
the dc offset from the previous stage is negligible. For higher performance systems, input coupling caps are
preferred.
OUTPUT IMPEDANCE
The output of a μPot varies typically between 25 kΩand 35 kΩand changes nonlinearly with step changes.
Since a μPot is made up of a resistor ladder network with a logarithmic attenuation, the output impedance is
nonlinear. Due to this configuration, a μPot cannot be considered as a linear potentiometer, but can be
considered only as a logarithmic attenuator.
It should be noted that the linearity of a μPot cannot be measured directly without a buffer because the input
impedance of most measurement systems is not high enough to provide the required accuracy. Due to the low
impedance of the measurement system, the output of the μPot would be loaded down and an incorrect reading
will result. To prevent loading from occurring, a JFET input op amp should be used as the buffer/amplifier. The
performance of a μPot is limited only by the performance of the external buffer/amplifier.
MUTE FUNCTION
One major feature of a μPot is its ability to mute the input signal to an attenuation level of 104dB as shown in
Figure 16. This is accomplished internally by physically isolating the output from the input while also grounding
the output pin through approximately 2 kΩ.
8Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
The mute function is obtained during power-up of the device or by sending any binary data of 01001111 and
above (to 11111111) serially to the device. The device may be placed into mute from a previous attenuation
setting by sending any of the above data. This allows the designer to place a mute button onto his system which
could cause a microcontroller to send the appropriate data to a μPot and thus mute any or all channels. Since
this function is achieved through software, the designer has a great amount of flexibility in configuring the
system.
DC INPUTS
Although the μPot was designed to be used as an attenuator for signals within the audio spectrum, the device is
capable of tracking an input DC voltage. The device will track DC voltages to a diode drop above each supply
rail.
One point to remember about DC tracking is that with a buffer at the output of the μPot, the resolution of DC
tracking will depend upon the gain configuration of that output buffer and its supply voltage. It should also be
remembered that the output buffer's supply voltage does not have to be the same as the μPot's supply voltage.
This could allow for more resolution when DC tracking.
SERIAL DATA FORMAT
The LM1973 uses a 3-wire serial communication format that is easily controlled by a microcontroller. The timing
for the 3-wire set, comprised of DATA-IN, CLOCK, and LOAD/SHIFT is shown in Figure 3.Figure 22 exhibits in
block diagram form how the digital interface controls the tap switches which select the appropriate attenuation
level. As depicted in Figure 3, the LOAD/SHIFT line is to go low at least 150 ns before the rising edge of the first
clock pulse and is to remain low throughout the transmission of each set of 16 data bits. The serial data is
comprised of 8 bits for channel selection and 8 bits for attenuation setting. For both address data and attenuation
setting data, the MSB is sent first and the 8 bits of address data are to be sent before the 8 bits of attenuation
data. Please refer to Figure 20 to confirm the serial data format transfer process.
Figure 20. Serial Data Format Transfer Process
Table 1. LM1973 Micropot Attenuator
Register Set Description
MSB: LSB
Address Register (Byte 0)
0000 0000 Channel 1
0000 0001 Channel 2
0000 0010 Channel 3
Data Register (Byte 1)
Contents Attenuation Level dB
0000 0000 0.0
0000 0001 0.5
0000 0010 1.0
0000 0011 1.5
::::: ::
0001 1110 15.0
0001 1111 15.5
0010 0000 16.0
0010 0001 17.0
0010 0010 18.0
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LM1973
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
Table 1. LM1973 Micropot Attenuator
Register Set Description (continued)
MSB: LSB
Address Register (Byte 0)
::::: ::
0011 1110 46.0
0011 1111 47.0
0100 0000 48.0
0100 0001 50.0
0100 0010 52.0
::::: ::
0100 1100 72.0
0100 1101 74.0
0100 1110 76.0
0100 1111 100.0 (Mute)
0101 0000 100.0 (Mute)
::::: ::
1111 1110 100.0 (Mute)
1111 1111 100.0 (Mute)
μPot SYSTEM ARCHITECTURE
The μPot's digital interface is essentially a shift register, where serial data is shifted in, latched, and then
decoded. As new data is shifted into the DATA-IN pin, the previously latched data is shifted out the DATA-OUT
pin. Once the data is shifted in, the LOAD/SHIFT line goes high, latching in the new data. The data is then
decoded and the appropriate switch is activated to set the desired attenuation level for the selected channel. This
process is continued each and every time an attenuation change is made. Each channel is updated, only, when
that channel is selected for an attenuator change or the system is powered down and then back up again. When
the μPot is powered up, each channel is placed into the muted mode.
μPot LADDER ARCHITECTURE
Each channel of a μPot has its own independent resistor ladder network. As shown in Figure 21, the ladder
consists of multiple R1/R2 elements which make up the attenuation scheme. Within each element there are tap
switches that select the appropriate attenuation level corresponding to the data bits in Table 1. It can be seen in
Figure 21 that the input impedance for the channel is a constant value regardless of which tap switch is selected,
while the output impedance varies according to the tap switch selected.
Figure 21. μPot Ladder Architecture
DIGITAL LINE COMPATIBILITY
The μPot's digital interface section is compatible with either TTL or CMOS logic due to the shift register inputs
acting upon a threshold voltage of 2 diode drops or approximately 1.4V.
10 Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
DIGITAL DATA-OUT PIN
The DATA-OUT pin is available for daisy-chain system configurations where multiple μPots will be used. The use
of the daisy-chain configuration allows the system designer to use only one DATA and one LOAD/SHIFT line per
chain, thus simplifying PCB trace layouts.
In order to provide the highest level of channel separation and isolate any of the signal lines from digital noise,
the DATA-OUT pin should be terminated through a 2 kΩresistor if not used. The pin may be left floating,
however, any signal noise on that line may couple to adjacent lines creating higher noise specs.
Figure 22. μPot System Architecture
DAISY-CHAIN CAPABILITY
Since the μPot's digital interface is essentially a shift register, multiple μPots can be programmed utilizing the
same data and load/shift lines. As shown in Figure 24, for an n-μPot daisy-chain, there are 16n bits to be shifted
and loaded for the chain. The data loading sequence is the same for n-μPots as it is for one μPot. First the
LOAD/SHIFT line goes low, then the data is clocked in sequentially while the preceding data in each μPot is
shifted out the DATA-OUT pin to the next μPot in the chain or to ground if it is the last μPot in the chain. Then
the LOAD/SHIFT line goes high; latching the data into each of their corresponding μPots. The data is then
decoded according to the address (channel selection) and the appropriate tap switch controlling the attenuation
level is selected.
CROSSTALK MEASUREMENTS
The crosstalk of a μPot as shown in Figure 9 in the TYPICAL PERFORMANCE CHARACTERISTICS was
obtained by placing a signal on one channel and measuring the level at the output of another channel of the
same frequency. It is important to be sure that the signal level being measured is of the same frequency such
that a true indication of crosstalk may be obtained. Also, to ensure an accurate measurement, the measured
channel's input should be AC grounded through a 1 μF capacitor.
CLICKS AND POPS
So, why is that output buffer needed anyway? There are three answers to this question, all of which are
important from a system point of view.
1. The first reason to utilize a buffer/amplifier at the output of a μPot is to ensure that there are no audible clicks
or pops due to attenuation step changes in the device. If an on-board bipolar op amp had been used for the
output stage, its requirement of a finite amount of DC bias current for operation would cause a DC voltage
“pop” when the output impedance of the μPot changes. Again, this phenomenon is due to the fact that the
output impedance of the μPot is changing with step changes and a bipolar amplifier requires a finite amount
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Links: LM1973
LM1973
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
www.ti.com
of DC bias current for its operation. As the impedance changes, so does the DC bias current and thus there
is a DC voltage “pop”.
2. Secondly, the μPot has no drive capability, so any desired gain needs to be accomplished through a
buffer/non-inverting amplifer.
3. Third, the output of a μPot needs to see a high impedance to prevent loading and subsequent linearity errors
from ocurring. A JFET input buffer provides a high input impedance to the output of the μPot so that this
does not occur.
Clicks and pops can be avoided by using a JFET input buffer/amplifier such as an LF412ACN. The LF412 has a
high input impedance and exhibits both a low noise floor and low THD+N throughout the audio spectrum which
maintains signal integrity and linearity for the system. The performance of the system solution is entirely
dependent upon the quality and performance of the JFET input buffer/amplifier.
LOGARITHMIC GAIN AMPLIFIER
The μPot is capable of being used in the feedback loop of an amplifier, however, as stated previously, the output
of the μPot needs to see a high impedance in order to maintain its high performance and linearity. Again, loading
the output will change the values of attenuation for the device. As shown in Figure 23, a μPot used in the
feedback loop creates a logarithmic gain amplifier. In this configuration the attenuation levels from Table 1, now
become gain levels with the largest possible gain value being 76dB. For most applications 76dB of gain will
cause signal clipping to occur, however, because of the μPot's versatility the gain can be controlled through
programming such that the clipping level of the system is never obtained. An important point to remember is that
when in mute mode the input is disconnected from the output. In this configuration this will place the amplifier in
its open loop gain state, thus resulting in severe comparator action. Care should be taken with the programming
and design of this type of circuit. To provide the best performance, a JFET input amplifier should be used.
Figure 23. Digitally-Controlled Logarithmic Gain Amplifier Circuit
Figure 24. n-μPot Daisy-Chained Circuit
12 Submit Documentation Feedback Copyright © 1994–2013, Texas Instruments Incorporated
Product Folder Links: LM1973
LM1973
www.ti.com
SNAS093B –DECEMBER 1994–REVISED MARCH 2013
REVISION HISTORY
Changes from Revision A (March 2013) to Revision B Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 12
Copyright © 1994–2013, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: LM1973
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
LM1973M/NOPB ACTIVE SOIC DW 20 36 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR 0 to 70 LM1973M
LM1973MX/NOPB ACTIVE SOIC DW 20 1000 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR 0 to 70 LM1973M
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM1973MX/NOPB SOIC DW 20 1000 330.0 24.4 10.9 13.3 3.25 12.0 24.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Apr-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM1973MX/NOPB SOIC DW 20 1000 367.0 367.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Apr-2013
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated
