© Semiconductor Components Industries, LLC, 2009
April, 2019 − Rev. 2
1Publication Order Number:
GBU4M/D
GBU4A - GBU4M
Bridge Rectifiers
Features
•Glass−Passivated Junction
•Surge Overload Rating: 150 A Peak
•Reliable Low−Cost Construction Utilizing Molded Plastic Technique
•Ideal for Printed Circuit Board
•UL Certified: UL #E258596
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Marking Package
Packing
Method
GBU4A GBU4A GBU 4L Rail
GBU4B GBU4B
GBU4D GBU4D
GBU4G GBU4G
GBU4J GBU4J
GBU4K GBU4K
GBU4M GBU4M
SIP4
CASE 127EL
www.onsemi.com
MARKING DIAGRAM
RU = UL Marking
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
GBU4A = Specific Device Code
~~ +−
RU$Y&Z&3
GBU 4A
GBU4A − GBU4M
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1)
Symbol Parameter
Value
Units
4A 4B 4D 4G 4J 4K 4M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VRDC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward
Current
TA = 100°C 4.0 A
TA = 40°C 3.0 A
IFSM Non−Repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
150 A
TSTG Storage Temperature Range −55 to +150 °C
TJOperating Junction Temperature −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
THERMAL CHARECTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Value Units
PDPower Dissipation 8 W
RqJA Thermal Resistance per Leg, Junction to Ambient (Note 2) 19 °C/W
2. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Units
VFForward Voltage, per Element at 4.0 A 1.0 V
IRReverse Current, per Element at Rated VRTA = 25°C 5.0 mA
TA = 125°C 500 mA
I2t I2t Rating for Fusing 93 A2s
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
GBU4A − GBU4M
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3
TYPICAL PERFORMANCE CHARACTERISTICS
100
Ambient Temperature (5C)
IF
, Average Rectified Forward
Current (A)
0
150
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Non−Repetitive Surge Current
Figure 5. Total Capacitance
050
1
2
3
4
5
VF
, Forward Voltage (V)
IF
, Forward Current (A)
IR, Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%) Number of Cycles at 60 Hz
IFSM, Peak Forward Surge
Current (A)
VR, Reverse Voltage (V)
CT
, Total Capacitance (pF)
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OR INDUCTIVE LOAD
HEAT−SINK
MOUNTING, TC
4x4x0.15”
COPPER PLATE
1
100
0.1
10
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
TJ = 25°C
Pulse Width = 300 ms
1% Duty Cycle
1
100
0.1
10
0 20 40 60 80 100 120 140
TC = 100°C
TC = 25°C
150
110
120
90
60
30
0
2 5 20 50 100
TJ = 105°C
50
200
10
100
TJ = 25°C
f = 1.0 MHz
Visg = 50m Vp−p
GBU4A−GBU4J
GBU4K−GBU4M
1105 50 100
SIP4 22.05x18.55
CASE 127EL
ISSUE O
DATE 31 DEC 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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98AON13717G
DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SIP4 22.05x18.55
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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1
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