HI-SINCERITY Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 MICROELECTRONICS CORP. HIRF840 / HIRF840F HIRF840 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. 1 2 Features 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source * Dynamic dv/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements 1 Thermal Characteristics Symbol Thermal Resistance Junction to Case Max. RJA Thermal Resistance Junction to Ambient Max. 2 3 HIRF840 Series Symbol Parameter RJC 3 Value Units TO-220AB 1.71 TO-220FP 3.3 62 D C/W G C/W S Absolute Maximum Ratings Symbol VDSS Parameter Units 500 V ID Drain to Current (Continuous)(VGS@10V, TC=25oC) 8 A IDM Drain to Current (Pulsed) (*1) 32 A VGS Gate-to-Source Voltage (Continue) 20 V Total Power Dissipation TO-220AB TO-220FP 74 38 W Derate above 25C TO-220AB TO-220FP 0.59 0.3 W/C EAS Single Pulse Avalanche Energy (*2) 510 mJ IAR Avalanche Current (*1) 8 A EAR Repetitive Avalanche Energy (*1) 13 mJ dv/dt Peak Diode Recovery (*3) 3.5 V/ns Operating Temperature Range -55 to 150 C Tstg Storage Temperature Range -55 to 150 C TL Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds 300 C PD Tj Drain-Source Voltage Value *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25C, L=14mH, RG=25, IAS=8A *3: ISD8A, di/dt100A/us, VDDV(BR)DSS, TJ150C HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 2/4 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25C, unless otherwise specified) Symbol V(BR)DSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient (Reference to 25 C, ID=1mA) o IDSS Drain-Source Leakage Current (VDS=500V, VGS=0V) Min. Typ. Max. Unit 500 - - V - 0.78 - V/oC - - 25 uA 250 uA Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125C) IGSSF Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=4.8A)(*4) - - 0.85 4.9 - - S - 1300 - - 310 - gFS Forward Transconductance (VDS=50V, ID=4.8A)(*4) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 120 - td(on) Turn-on Delay Time - 14 - - 23 - - 49 - - 20 - - - 63 - - 9.3 - - 32 tr td(off) tf Rise Time Turn-off Delay Time VDS=25V, VGS=0V, f=1MHz (VDD=250V, ID=8A, RG=9.1, RD=31)(*4) Fall Time pF ns Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge LD Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) - 4.5 - nH LS Internal Source Inductance (Measured from the drain lead 0.25" from package to source bond pad) - 7.5 - nH Min. Typ. - 4.2 8.9 - ** - - 460 970 ns - - 2 V (VDS=400V, ID=8A, VGS=10V) (*4) nC *4: Pulse Test: Pulse Width300us, Duty Cycle2% Source-Drain Diode Symbol Characteristic Qrr Reverse Recovery Charge ton Forward Turn-On Time trr Reverse Recovery Time VSD Diode Forward Voltage IF=8A, di/dt=100A/us, Tj=25C (*4) IS=8A, VGS=0V, Tj=25C (*4) Max. Units uC **: Negligible, Dominated by circuit inductance HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 3/4 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D I RF 840 Date Code H K M I 3 G N 2 O P J L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A 4 1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D 3 2 5 Date Code G I J N 2 K 1 M L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F I RF 840F Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 1/2/4/5 3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C 5 C 5sec 1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HIRF840, HIRF840F o o o o 260 C +0/-5 C 5sec 1sec HSMC Product Specification