HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005. 06.08
Page No. : 1/4
HIRF840, HIRF840F HSMC Product Specification
HIRF840 / HIRF840F
N-CHANNEL POWER MOSFET
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol Parameter Value Units
TO-220AB 1.71
RθJC Thermal Resistance
Junction to Case Max. TO-220FP 3.3 °C/W
RθJA Thermal Resistance
Junction to Ambient Max. 62 °C/W
Absolute Maximum Ratings
Symbol Parameter Value Units
VDSS Drain-Sour ce Voltage 500 V
IDDrain to Current (Continuous)(VGS@10V, TC=25oC) 8 A
IDM Drain to Current (Pulsed) (*1) 32 A
VGS Gate-to-Source Voltage (Continue) ±20 V
Total Powe r Dissipation
TO-220AB
TO-220FP 74
38 W
PDDerate above 25°C
TO-220AB
TO-220FP 0.59
0.3 W/°C
EAS Single Pulse Avalanche Energy (*2) 510 mJ
IAR Avalan che Current (*1) 8 A
EAR Repetitive Avalanche Energy (*1) 13 mJ
dv/dtPeak Diode Recovery (*3) 3.5 V/ns
TjOperating Temperature Range -55 to 150 °C
Tstg Storage Temperature Range -55 to 150 °C
TLMaximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds 300 °C
*1: Repetitive rat i ng; pulse width limited by max. junction tem perature
*2: VDD=50V, starting Tj=25°C, L=14mH, RG=25Ω, IAS=8A
*3: ISD≤8A, di/dt≤100A/us, VDD≤V(BR)DSS, TJ≤150°C
HIRF840 Series Pin Assignment
123
123
Tab
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Ta b: Drai n
Pin 3: Source
G
D
S
HIRF840 Series Symbol
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005. 06.08
Page No. : 2/4
HIRF840, HIRF840F HSMC Product Specification
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Characteristic Min. Typ. Max. Unit
V(BR)DSS Drain-S ourc e Br eakdown Vo ltage (VGS=0V, ID=250uA) 500 - - V
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient (Reference to 25oC, ID=1mA) - 0.78 - V/oC
Drain-Source Leakage Current (VDS=500V, VGS=0V) - - 25 uA
IDSS Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C) 250 uA
IGSSF Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) - - 100 nA
IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) - - -100 nA
VGS(th) Gate Threshold V oltage (VDS=VGS, ID=250uA) 2 - 4 V
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=4.8A)(*4) - - 0.85 Ω
gFS Forward Transconductance (VDS=50V, ID=4.8A)(*4) 4.9 - - S
Ciss Input Capacitance - 1300 -
Coss Output Capacitance - 310 -
Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz - 120 - pF
td(on) Turn-on Delay Time - 14 -
trRise T i me - 23 -
td(off) Turn-off Delay Time - 49 -
tfFall Time
(VDD=250V, ID=8A, RG=9.1Ω,
RD=31Ω)(*4)
-20-
ns
QgTotal Gate Charge - - 63
Qgs Gate-Source Charge - - 9.3
Qgd Gate-Drain Charge
(VDS=400V, ID=8A, VGS=10V)
(*4) --32
nC
LDInternal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die) -4.5-nH
LSInternal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad) -7.5-nH
*4: Pulse Test: Pulse Width≤300us, Duty Cycl e≤2%
Source-Drain Diode
Symbol Characteristic Min. Typ. Max. Units
Qrr Reverse Recovery Charge - 4.2 8.9 uC
ton Forward Turn-On Ti me - ** -
trr Reverse Recovery Time IF=8A, di/dt=100A/us, Tj=25°C (*4) - 460 970 ns
VSD Diode Forward Voltage IS=8A, VGS=0V, Tj=25°C (*4) --2V
**: Negligibl e, Dominated by circui t inductance
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005. 06.08
Page No. : 3/4
HIRF840, HIRF840F HSMC Product Specification
TO-220AB Dimension
TO-220FP Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat i o n assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al P ark Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
D
F
G I
K
LM
3
2
1
C
J
N
α3
E
α2
O
α4
α5
α1
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
H
84
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
0RFI
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I-*3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N-*2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
Marking:
Control Code
Date Code
H
84
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
0F RFI
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
DIM Min. Max.
A 6.48 7.40
C 4.40 4.90
D 2.34 3.00
E 0.45 0.80
F 9.80 10.36
G 3.10 3.60
I 2.70 3.43
J 0.60 1.00
K 2.34 2.74
L 12.48 13.60
M 15.67 16.20
N 0.90 1.47
O 2.00 2.96
α1/2/4/5 -*5
o
α3-*27
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005. 06.08
Page No. : 4/4
HIRF840, HIRF840F HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Hum idit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained abov e :
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
