VRRM IPULSE VF rF VDcmax = = = = = 12 60 7,32 0.48 10 kV kA V m kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1201 Doc. No. 5SYA 04PP-01 Oct. 01 * * * * * * Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing possibility Compact Design Glazed Ceramic Presspack Housing High Reliability VRRM Repetitive reverse blocking voltage 12 kV Tvj = 0 ... 125C VDC Permanent DC voltage for 100 FIT failure rate 8 kV VDC Max. DC voltage 10 kV At Tj 50 C. Ambient cosmic radiation at sea level in open air. For 60 sec at Tj 50C IPULSE Max. Pulse Current 60 kA Half sine wave, Tj 50C, tp 500 s di/dt Max. current rate of rise 2 It Limiting load integral 0,9 x106 A2s Tp = 10 ms, Tj = 25 C VF Forward voltage drop 7.32 V IF = 4000 A, Tj = 50 C VF0 Threshold voltage 5.40 V Tj = 50 C rT Slope resistance 0.48 m Tj = 50 C 500 A/s Single Pulse The same diode is also available with sharing resistors direct mounted on the housing. See 5SDA 27Z1202 ABB Semiconductors AG reserves the right to change specifications without notice Pulse Power Device 5SDA 27Z1201 Mechanical Data FM Mounting force min. 17 kN max. 24 kN Dp Pole-piece diameter 47 mm H Housing thickness 51 mm M Weight 1,0 kg DS Surface creepage distance 42 mm Da Air strike distance 29 mm ABB ABB Semiconductors AG Department for Pulsed Power Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel.: +41-79-540-9381 Fax: +41-62 888 6310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abbsem.com Doc. No. 5SYA 04PP-01 Oct. 01