V
RRM
=12 kV
I
PULSE
=60 kA
V
F
=7,32 V
r
F
=0.48 mΩ
V
Dcmax
=10 kV
Doc. No. 5SYA 04PP-01 Oct. 01
Features
•
Multichip Design with 6 Wafers in Series
•
For Single Pulse Applications
•
Voltage Sharing possibility
•
Compact Design
•
Glazed Ceramic Presspack Housing
•
High Reliability
VRRM Repetitive reverse blocking voltage 12 kV Tvj = 0 … 125°C
VDC Permanent DC voltage for 100
FIT failure rate 8kV At Tj ≤ 50 °C. Ambient cosmic radiation
at sea level in open air.
VDC Max. DC voltage 10 kV For ≤ 60 sec at Tj ≤ 50°C
IPULSE Max. Pulse Current 60 kA Half sine wave, Tj ≤ 50°C, tp ≤ 500 µs
di/dt Max. current rate of rise 500 A/µsSingle Pulse
I2tLimiting load integral 0,9 x106A2sTp = 10 ms, Tj = 25 °C
VFForward voltage drop ≤ 7.32 VIF = 4000 A, Tj = 50 °C
VF0 Threshold voltage 5.40 VTj = 50 °C
rTSlope resistance 0.48 mΩTj = 50 °C
The same diode is also available with sharing resistors direct mounted on the housing. See 5SDA 27Z1202
High Voltage High Current Diode
for Pulsed Power Applications
5SDA 27Z1201
ABB Semiconductors AG reserves the right to change specifications without notice
Pulse Power Device 5SDA 27Z1201
Mechanical Data
min. 17 kN
FMMounting force max. 24 kN
DpPole-piece diameter 47 mm
HHousing thickness 51 mm
MWeight 1,0 kg
DSSurface creepage distance 42 mm
DaAir strike distance 29 mm
ABB
ABB Semiconductors AG
Department for Pulsed Power
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Tel.: +41-79-540-9381
Fax: +41-62 888 6310
E-Mail: pulsepower.abbsem@ch.abb.com
Internet: www.abbsem.com
Doc. No. 5SYA 04PP-01 Oct. 01
