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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQT4N25TF N-Channel MOSFET
FQT4N25TF
!"
!
!
!"
"
"
!"
!
!
!"
"
"
S
D
G
SOT-223
G
D
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQT4N25TF Unit
VDSS Drain-Source Volt age 250 V
IDDrain Current - Continuous (TC = 25°C) 0.83 A
- Continuous (TC = 70°C) 0.66 A
IDM Drain Current - Pulsed (Note 1) 3.3 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ
IAR Avalanche Current (Note 1) 0.83 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PDPower Dissipation (TC = 25°C) 2.5 W
- Derate above 25°C 0.02 W/°C
TJ, TSTG Ope rating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Unit
RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A
•Low Gate Charge (Typ. 4.3 nC)
•Low Crss (Typ. 4.8 pF)
N-Channel QFET® MOSFET
250 V, 0.83 A, 1.75 Ω
Description
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
December 2015
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ° C
3. ISD ≤3.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA250 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.22 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 µA
VDS = 200 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.415 A -- 1.38 1.75 Ω
gFS Forward Transconductance VDS = 50 V, ID = 0.415 A -- 1.28 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 155 200 pF
Coss Output Capacitance -- 35 45 pF
Crss Reverse Transfer Capacit ance -- 4.8 6. 5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 3.6 A,
RG = 25 Ω
-- 6.8 25 ns
trTurn-On Rise Time -- 45 100 ns
td(off) Turn-Off De l a y Time -- 6.4 25 ns
tfTurn-Off Fall Time -- 22 55 n s
QgTotal Gate Charge VDS = 200 V, ID = 3.6 A,
VGS = 10 V
-- 4.3 5.6 nC
Qgs Gate-Source Charge -- 1.3 -- nC
Qgd Gate-Drain Charge -- 2.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 0.83 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 0.83 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 3.6 A,
dIF / dt = 100 A/µs
-- 110 -- ns
Qrr Reverse Recovery Charge -- 0.35 -- µC
FQT4N25TF N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQT4N25TF FQT4N25 SOT-223 Tape and Reel 13" 12 mm 2500 units
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
25!
150!
"
N o te s :
1. V GS = 0V
2. 250#s Pulse Test
IDR , Reverse Drain C urrent [A]
VSD , Source-Drain Voltage [V]
246810
10-1
100
" Notes :
1. VDS = 50V
2. 250#s Pulse T est
-55!
150!
25!
ID , D ra in C u rre n t [A ]
VGS , Ga te-S ource Voltage [V]
012345
0
2
4
6
8
10
12
VDS = 125V
VDS = 50V
VDS = 200V
" Note : ID = 3.6 A
VGS, Gate-Source Voltage [V]
QG, To tal Ga t e Charge [nC]
10-1 100101
0
50
100
150
200
250
300
350 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
"
N o te s :
1. V GS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, D rain-Source Voltage [V]
02468
0
2
4
6
8
VGS = 20V
VGS = 10V
" Note : TJ = 25!
RDS(ON) [$],
Drain-Source On-Resistance
ID, D r a in Current [A]
10-1 100101
10-1
100
VGS
Top : 1 5 .0 V
1 0 .0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
" No te s :
1. 250#s Pulse T e st
2. TC = 25!
ID, D ra in C u rre n t [A ]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
FQT4N25TF N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
10-5 10-4 10-3 10-2 10-1 100101102103
10-1
100
101" Notes :
1. Z %JC(t) = 50 !/W Ma x .
2 . Du ty Fa c to r , D=t1/t2
3. T JM - TC = PDM * Z%JC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z%JC
(t), Therm al R esponse
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
ID, D ra in C u rre n t [A]
TC, Case Temperature [!
]
10-1 100101102
10-3
10-2
10-1
100
101
100 ms
DC
10 ms
1 ms100 µs
Operation in This Area
is Limited by R DS(on)
" Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
" No te s :
1. VGS = 10 V
2. ID = 0.415 A
RDS(ON) , ( N or malize d )
Drain-Source O n-Resistance
TJ, Junc tion Te m pe rature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
"
N o te s :
1 . V GS = 0 V
2 . ID = 250 #A
BV DSS , (No rma liz e d )
D rain-Sou rce Breakdow n Voltage
TJ, Junction Tem perature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
FQT4N25TF N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQT4N25TF N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQT4N25TF N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT4N25TF Rev. 1.2
www.fairchildsemi.com
DETAIL A
SCALE: 2:1
3.10
2.90
6.70
6.20
3.70
3.30
0.84
0.60
2.30
4.60
1.80 MAX
6.10
2.30
LAND PATTERN RECOMMENDATION
0.95
1.90
1.90
3.25
7.30
6.70
GAGE
PLANE
0.60 MIN
SEE DETAIL A
C0.08 C
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
SEATING
PLANE
10°
0° TYP
B
A
0.10 C B
0.10 C B
4
31
0.10
0.00
0.25
R0.15±0.05
R0.15±0.05
1.70
10°
5°
10°
5°
0.35
0.20
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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