VISHAY STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor 8.0A UltraFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction drop Surge overload rating to 100A peak Low reverse leakage current Super-fast switching for high efficiency High current capability and low forward voltage Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings 94 9537 Tj = 25C Repetitive peak reverse voltage STPR805DB Vrru 50 Vv =Working peak reverse voltage STPR810DB | =VRwm 100 Vv =DC Blocking voltage STPR815DB =VpR 150 V STPR820DB 200 Vv Peak forward surge current lesm 100 A Average forward current Ta=125C lEAy 8 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ip=8A Ve 1.3 Vv Reverse current Tce=25C IR 10 uA To=1 00C IR 500 uA Reverse recovery time |l-F=1A, IR=0.5A, |,,=0.25A ter 25 ns Diode capacitance VrR=4V, f=1MHz Cp 45 pF Thermal resistance RthJA 3.1 KAW junction to ambient Rev. A2, 24-Jun-98STPR805DB--STPR820DB wa Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 10 400 100 l-ay Average Forward Current (A) a an Ln C) Diode Capacitance ( pF ) Resistive or inductive load 0 pop yp py 10 0 50 100 150 0.1 1.0 10 100 15438 Tamb Ambient Temperature ( C ) 15441 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 T= 256 100 IF Pulse Width = 300 ps > 2% Duty Cyel a z y Cycle < = 7 10 6 8 8 v 1,0 @ a = g i 1.0 id I a te Od 7) = 25C 0.1 0.01 0.2 0.6 1.0 1.4 0 40 80 120 15439 Ve Forward Voltage ( V ) 15446 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage x 150 a T T_TTTT 8.3 ms Single Half-Sine-Wave =e JEDEC method 125 5 Oo 100 =) n 3 3X ~~ E " My, LL 50 ~ x mS IN 25 SS = te 7 0 1 10 100 15440 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98. STPR805DB-STPR820DB VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AC Dim Min Max pt | A | 14.22 15.88 Ad WJ TT ~ B 9.65 10.67 | | ( 254 3.43 . Lae of 5.84 6.86 wa | E - 6.25 a G 17.70 14.73 a) 1) 051 11h | K | 63.53 04.09 bo L 356 ,.B3 s ! M 114 1.40 N 0.30 0.64 Pp 2.03 2.9) l R i, 83 5.33 ALL Dimensions in mm N J P R PIN 1 + Q_, 1 acorag fo ON p 14469 PIN 2 - Q>_Ssiase Case positive Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)STPR805DB--STPR820DB Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98