MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOWIRF320 = IRF324 = IRF322 = IRF323 IRF720 = IRF724 = IRF722 IRF723 IRF320 = IRF324 = IRF322 = IRF323 a IRF720 = IRF724 = IRF722 = IRF723 Siliconix 400Vmosrower Advanced information These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES a High Voltage a No Second Breakdown a High input Impedance a Internal Drain-Source Diode a Very Rugged: Excellent SOA = Extremely Fast Switching BENEFITS Reduced Component Count a Improved Performance a Simpler Designs = Improved Reliability Product Summary Part Number BVoss Rosion) lp Package IRF320 400V 1.80 3A IRF321 350V - TO-3 IRF322 400V 2.5Q 2.5A IRF323 350V IRF720 400V IRF721 350V 180 3A TO-220AB IRF722 400V 2.52 2.5A IRF723 350V wl ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF320, 322, 720, 722.0... cece e eee e ee ee eenee IRF321, 323, 721, 723 2... c cece cence er eneeees Drain-Gate Voltage IRF320, 322, 720, 722 00... cece cece cece ne nee eee (RF321, 323, 721, 723 oo cece cece e een e eee reee Drain Current Continuous ~ IRF320, 321, 720,721... cee eee Drain Current Pulsed (80us to 300us, 1% duty cycle).............0..0.. +12A Gate Current (Peak) ............ ccc cece cece nec eee tenors t1A Gate-Source Voltage 2.0... cc cess cere cece eesen sete ere eeenee +40V Total Power Dissipation 2.2.0... 0... ccc cece eens 40W Linear Derating Factor ...........0 cc ccc ccceeee eters 0.32 W/C Operating and Storage IRF322, 323, 722,723 2... eee tees Temperature ........6. 0 ccc cece cence er neee -55C to + 150C 0.450 (11.43) 290 0.875 = om 95, He 0.250 , (7,39) 080 (2.04) eum (22.225) in| (6.35) O55 (7,59) 15.85) Te 533) 0.135 wax MAX (6.85) (3.429) c 1 t T 0.043 /1.092/ j ao SEATING o038 70.965) Mine Boo 112.70) PLANE 8 a7 1.197 (30,408) 7 pia 2183 (4.08 Ps a55 Foo ROR) 0.939 (3.54) 0.675 (17.145) VAT? (28.896) a5 T6686 716.637) . tt 14.775) MAX I oe ag ~ BOTH ENDS 070 (EM) 22.69) | 0.40 (77.176) ee B00 (19.66) 0.420 70.668) & Vy tT 1 \ / T4 SP 0.161 /4.089) 1 250] 045 (1.18) 0.228 (5.715) \ ose (3.835) SA . . . 2 R MAX BO (14.23) 9.208 16.207) portom view (73-335) [~ 386 1651) I PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source CASE Drain PIN 2 & TAB Drain PIN 3 Source 2-18 SiliconixELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Part Parameter Number Min Typ. | Max Unit Test Conditions Static IRF320, 322 400 Drain-Source Breakdown IRF720, 722 BY, = Vas = 0, Ip = 250 P85 Voltage IRF321,923 | aa v__ | Yas=6. !o=250HA IRF721, 723 Vestn Gate Threshold Voitage All 2.0 40 Vv Vos = Ves, 'p = 1.0 mA | less Gate-Body Leakage Alt +100 nA Vas = + 20V, Vos =9 ; Zero Gate Voltage Drain All 0.1 | 025 | a Vos= Rated VpgVas=O SS Gurrent 02 | 10 Vig = Rated Vog Vag = 0, Te = 125C Ipjon) ~~: On-Statte Drain Current All 3.0 A Vos = 25V, Vag = 10V (Note 1) IRF320, 321 as | te Static Drain-Source On-State IRF720, 721 : : = =1, Toston) Resistance IRFa22, 323 2 Ves = 10V, Ip = 1.5A (Note 1) IRF722, 723 18 | 25 Dynamic Os Forward Transconductance All 1.0 2.0 $s Vog= 25V,15=1.5A (Note 1) Ciss Input Capacitance 450 600 Coss Output Capacitance All 100 200 pF Veg = 0, Vos = 25V, f= 1 MHz Cisse Reverse Transfer Capacitance 20 40 tajon) =: Turn-On Delay Time All 20 40 t, Rise Time All 25 50 Vop = 200V, [p= 1.5A, R, = 1302, ns tyoiy) Turn-Otf Delay Time All so | 100 Rg = 252, (Fig. 1) ty Fail Time oe AN 25 50 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.3 v lg =-3A Veg = 0 (Note 1) tr Reverse Recovery Time All 400 ns lp =-3A, Ves = 0, di/dt = 100A/us (Fig. 1) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit $A\\A 50Q di/dt Adjust (1-27 uH) | + 5 TO S0uF 7 | 1N4993 A # lpkyAdiust , Rgen 6 | ~ Lud | }le Ro ses | 2400 iN4001 20v 2 + | 1 | , | | 4000uUF Sex 3 +>} { { - | | | circuit = | R $0252 PULSE UNDER L$ 0.0%H [generaTon| [TEST 4 PW. = 1 ys Cg < 50 pF 14 + ig WV DUTY CYCLE = 1% 14723 low UA SCOPE FROM TRIGGER CKT "7 Siliconix cZidl = CcZddl = boZddl = OZ cedal = ZeCsal = boda = OEIal