1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
RFP10N15
10A, 150V, 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Features
• 10A, 150V
•r
DS(ON) = 0.300Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFP10N15 TO-220AB RFP10N15
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
March 1999 File Number 1445.3Data Sheet
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 150 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID10 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 150 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, TC = 125oC- - 25 mA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0 - - ±100 nA
Drain to Source On Resistance(Note 2) rDS(ON) ID = 10A, VGS = 10V, (Figures 6, 7) - - 0.300 Ω
Drain to Source On Voltage (Note 2) VDS(ON) ID = 10A, VGS = 10V - - 3.0 V
Turn-On Delay Time td(ON) ID≈ 5A, VDD = 75V, RG=50Ω,
VGS = 10V, RL= 14.7Ω
(Figures 10, 11, 12)
-4060ns
Rise Time tr- 165 250 ns
Turn-Off Delay Time td(OFF) - 90 135 ns
Fall Time tf- 90 135 ns
Input Capacitance CISS VGS = 0V, VDS = 25V,
f = 1MHz, (Figure 9) - - 850 pF
Output Capacitance COSS - - 230 pF
Reverse Transfer Capacitance CRSS - - 100 pF
Thermal Resistance Junction to Case RFP10N15 - - 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 5A - - 1.4 V
Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 200 - ns
NOTES:
2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFP10N15
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
12
10
8
6
4
2
0
100
10
1
0.1 1 10 100 1000
ID, DRAIN CURRENT (A)
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
TC = 25oC
DC
ID MAX CONTINUOUS 15
10
5
02345
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 25oC
VGS = 10V
VGS = 20V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
6789
20
0
VDS = 10V
DUTY CYCLE ≤2%
IDS(ON), DRAIN TO SOURCE CURRENT (A)
15
10
5
0246810
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
0
20
25oC
-40oC
125oC
-40oC
125oC
125oC
25oC
-40oC
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤2%
rDS(ON), DRAIN TO SOURCE ON
ID, DRAIN CURRENT (A)
0.7
0.6
0.4
0.2
002 8 12 16
RESISTANCE (Ω)
0.5
0.3
0.1
4 6 10 14
RFP10N15
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1.5
1.0
0.5
-50 050 100 150
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
2.0
ON RESISTANCE
0
VGS = 10V
ID= 5A
PULSE DURATION = 80µs
1.2
1.0
-50 0 50 100
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
0.9
0.8
0.7
1.1
1.3
150
V
DS
= V
GS
I
D
= 250µA
01020304050
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
800
600
400
200
0
1000
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.75BVDSS 0.75BVDSS
0.50BVDSS
0.25BVDSS
0.25BVDSS
GATE
SOURCE
VOLTAGE VDD = BVDSS
VDD = BVDSS
IG(REF)
IG(ACT)
20 80
DRAIN SOURCE
IG(REF)
IG(ACT)
RL = 15Ω
IG(REF) = 1mA
VGS = 10V
VDS, DRAIN TO SOURCE VOLTAGE (V)
t, TIME (µs)
VGS, GATE TO SOURCE VOLTAGE (V)
150
112.5
75
37.5
0
10
8
6
4
0
2
0.50BVDSS
VOLTAGE
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
RFP10N15
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
RFP10N15
