MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
DataSheet
Rev.2.3
Final
PowerManagement&Multimarket
2
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
1
2
3
4
5
6
7
8
4
32
1
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
1Description
Features
•OptimizedforhighperformanceBuckconverter
•MonolithicintegratedSchottkylikediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 25 V
RDS(on),max 1.05 mΩ
ID100 A
QOSS 38 nC
QG(0V..10V) 59 nC
Type/OrderingCode Package Marking RelatedLinks
BSC010NE2LSI PG-TDSON-8 010NE2LI -
1) J-STD20 and JESD22
3
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
-
-
-
-
100
100
100
100
38
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current 2) ID,pulse - - 400 A TC=25°C
Avalanche current, single pulse 3) IAS - - 50 A TC=25°C
Avalanche energy, single pulse EAS - - 100 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
96
2.5 WTC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature Tj,Tstg - - - °C IEC climatic category;
DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom RthJC - - 1.3 K/W -
Thermal resistance, junction - case,
top RthJC - - 20 K/W -
Device on PCB RthJA - - 50 K/W 6 cm2 cooling area 1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
5
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA
Breakdown voltage temperature
coefficient dV(BR)DSS/dTj- 15 - mV/K ID=10mA,referencedto25°C
Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
-
3
0.5
-mA VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.1
0.9
1.4
1.05 mΩVGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance RG0.3 0.6 1.2 Ω-
Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 4200 5600 pF VGS=0V,VDS=12V,f=1MHz
Output capacitance Coss - 1800 2400 pF VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance Crss - 180 - pF VGS=0V,VDS=12V,f=1MHz
Turn-on delay time td(on) - 6.3 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time tr- 6.2 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 32 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time tf- 4.6 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
6
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 10 13 nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge Qgd - 6.9 10 nC VDD=12V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 10 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total Qg- 29 39 nC VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total Qg- 59 78 nC VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 25 - nC VDS=0.1V,VGS=0to4.5V
Output charge Qoss - 38 51 nC VDD=12V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 96 A TC=25°C
Diode pulse current IS,pulse - - 400 A TC=25°C
Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25°C
Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/µs
1) See ″Gate charge waveforms″ for parameter definition
7
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
20
40
60
80
100
120
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 40 80 120 160
0
20
40
60
80
100
120
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
8
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0123
0
100
200
300
400
500
600
700
800
4.5 V
5 V
10 V
4 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 10 20 30 40 50
0.0
0.5
1.0
1.5
2.0
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V 8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
012345
0
80
160
240
320
400
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160
0
80
160
240
320
400
gfs=f(ID);Tj=25°C
9
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
typ
RDS(on)=f(Tj);ID=30A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
10 mA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 5 10 15 20 25
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.4 0.8 1.2
10-1
100
101
102
103
-55 °C
25 °C
125 °C
150 °C
IF=f(VSD);parameter:Tj
10
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40 50 60 70
0
2
4
6
8
10
12
20 V
12 V
5 V
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
VSD[V]
IDSS[A]
0 5 10 15 20
10-6
10-5
10-4
10-3
10-2
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Gate charge waveforms
11
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm/inches
12
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
Dimension in mm
Figure2OutlinePackingInfoTDSON-8,dimensionsinmm/inches
13
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Rev.2.3,2014-03-03Final Data Sheet
RevisionHistory
BSC010NE2LSI
Revision:2014-03-03,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2014-03-03 Release of Final Version
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