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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 52
General Description
Functional Diagram The HMC471MS8G & HMC471MS8GE are SiGe HBT
Dual Channel Gain Block MMIC SMT ampli ers cov-
ering DC to 5 GHz. These versatile products contain
two gain blocks, packaged in a single 8 lead plas-
tic MSOP, for use as either separate cascadable 50
Ohm RF/IF gain stages, LO or PA drivers or with both
ampli ers combined utilizing external 90° hybrids to
create a high linearity driver ampli er. Each ampli-
er in the HMC471MS8G(E) offers 20 dB of gain,
+20 dBm P1dB with a +34 dBm output IP3 at 850
MHz while requiring only 80 mA from a single positive
supply. The combined dual ampli er circuit delivers
up to +21 dBm P1dB with +36 dBm OIP3 for speci c
application bands through 4 GHz.
P1dB Output Power: +20 dBm
Gain: 20 dB
Output IP3: +34 dBm
Supply (Vs): +6V to +12V
14.9 mm2 Ultra Small 8 Lead MSOP
Typical Applications
The HMC471MS8G / HMC471MS8GE is a dual RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Electrical Speci cations, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Note: Data taken with broadband bias tee on device output. All speci cations refer to a single ampli er.
Parameter Min. Typ. Max. Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
18.5
15.5
13
10.5
8
21
17.5
15
12.5
10
dB
dB
dB
dB
dB
Gain Variation Over Temperature DC - 5 GHz 0.008 0.012 dB/ °C
Input Return Loss
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
12
14
8
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
13
9
7
5
dB
dB
dB
dB
Reverse Isolation DC - 5 GHz 20 dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
16
14
11
9
7
19
17
14
12
10
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
34
32
27
25
22
dBm
dBm
dBm
dBm
dBm
Noise Figure DC - 4 GHz
4.0 - 5.0 GHz
3.25
4.0
dB
dB
Supply Current (Icq) 80 mA
Features
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 53
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
Data shown is of a single ampli er.
-25
-15
-5
5
15
25
012345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
0123456
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0123456
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 54
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 80 mA @ 850 MHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 51 Ohms
Data shown is of a single ampli er.
0
2
4
6
8
10
12
14
16
18
20
22
0123456
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
0123456
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
15
20
25
30
35
40
0123456
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
12
16
20
24
28
32
36
6789101112
Gain
P1dB
Psat
IP3
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm
)
Vs (Vdc)
68
70
72
74
76
78
80
82
84
86
88
90
4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4
Icc (mA)
Vcc (Vdc)
+85C
+25C
-40C
Cross Channel Isolation
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
INPUT1-OUTPUT2
INPUT2-OUTPUT1
PATH ISOLATION (dB)
FREQUENCY (GHz)
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 55
Gain*
Reverse Isolation* Output IP3*
Output P1dB* Output Psat*
Input & Output Return Loss *
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output
(see application circuit for balanced operation).
-8
-3
2
7
12
17
22
0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 0.5 1 1.5 2 2.5 3
INPUT RETURN LOSS
OUTPUT RETURN LOSS
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 0.5 1 1.5 2 2.5 3
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
20
25
30
35
40
1.4 1.6 1.8 2 2.2 2.4 2.6
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
12
14
16
18
20
22
24
1.4 1.6 1.8 2 2.2 2.4 2.6
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
12
14
16
18
20
22
24
1.4 1.6 1.8 2 2.2 2.4 2.6
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 56
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6.0 Vdc
Collector Bias Current (Icc) 100 mA
RF Input Power (RFIN)(Vcc = +4.2 Vdc) +14 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 32.6 mW/°C above 85 °C) 2.12 W
Thermal Resistance
(junction to ground paddle) 30.7 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC471MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H471
XXXX
HMC471MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H471
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 57
Pin Descriptions
Pin Number Function Description Interface Schematic
1 RFIN1 This pin is DC coupled.
An off chip DC blocking capacitor is required.
8 RFOUT1 RF output and DC Bias (Vcc1) for the output stage.
2, 3, 6, 7 N/C No connection. These pins may be connected to RF ground.
Performance will not be affected.
4 RFIN2 This pin is DC coupled.
An off chip DC blocking capacitor is required.
5 RFOUT2 RF output and DC Bias (Vcc2) for the output stage.
Ground
Paddle GND Ground paddle must be connected to RF/DC ground.
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 58
Application Circuit for Balanced Operation
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50 900 1900 2200 2400 3500 5000
L1, L2 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH
C4, C5, C9, C10 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values
for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) 6V 8V 10V 12V
RBIAS VALUE 11 Ω 39 Ω 62 Ω 91 Ω
RBIAS POWER RATING 1/4 W 1/2 W 1/2 W 1 W
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 59
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 109185 [1]
Item Description
J1 - J4 PCB Mount SMA Connector
J5 - J8 DC Pins
L1, L2 Inductor, 0402 Pkg.
C1, C8 2.2 μF Capacitor, Tantalum
C2, C7 1000 pF Capacitor, 0402 Pkg.
C3, C6 100 pF Capacitor, 0402 Pkg.
C4, C5, C9, C10 Capacitor, 0402 Pkg.
R1, R2 Resistor, 2010 Pkg.
U1 HMC471MS8G / HMC471MS8GE
PCB [2] 109162 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
