TZX...
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Document Number 85614
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Very high stability
D
Low noise
D
Available with tighter tolerances
Applications
Voltage stabilization 94 9367
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Power dissipation l=4mm, TL=25
°
C PV500 mW
Z–current IZPV/VZmA
Junction temperature Tj175
°
C
Storage temperature range Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
CParameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant RthJA 300 K/W
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF1.5 V
TZX...
Vishay Telefunken
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Type VZmin. VZmax. Type VZmin. VZmax. rZmax. at IZIRmax. at VR
(V) (V) (V) (V) (
W
) (mA) (
m
A) (V)
TZX2V4 2.3 2.6 TZX2V4A 2.3 2.5 100 5 5 0.5
TZX2V4 2.3 2.6 TZX2V4B 2.4 2.6 100 5 5 0.5
TZX2V7 2.5 2.9 TZX2V7A 2.5 2.7 100 5 5 0.5
TZX2V7 2.5 2.9 TZX2V7B 2.6 2.8 100 5 5 0.5
TZX2V7 2.5 2.9 TZX2V7C 2.7 2.9 100 5 5 0.5
TZX3V0 2.8 3.2 TZX3V0A 2.8 3.0 100 5 5 0.5
TZX3V0 2.8 3.2 TZX3V0B 2.9 3.1 100 5 5 0.5
TZX3V0 2.8 3.2 TZX3V0C 3.0 3.2 100 5 5 0.5
TZX3V3 3.1 3.5 TZX3V3A 3.1 3.3 100 5 5 1
TZX3V3 3.1 3.5 TZX3V3B 3.2 3.4 100 5 5 1
TZX3V3 3.1 3.5 TZX3V3C 3.3 3.5 100 5 5 1
TZX3V6 3.4 3.8 TZX3V6A 3.4 3.6 100 5 5 1
TZX3V6 3.4 3.8 TZX3V6B 3.5 3.7 100 5 5 1
TZX3V6 3.4 3.8 TZX3V6C 3.6 3.8 100 5 5 1
TZX3V9 3.7 4.1 TZX3V9A 3.7 3.9 100 5 5 1
TZX3V9 3.7 4.1 TZX3V9B 3.8 4.0 100 5 5 1
TZX3V9 3.7 4.1 TZX3V9C 3.9 4.1 100 5 5 1
TZX4V3 4.0 4.5 TZX4V3A 4.0 4.2 100 5 5 1.5
TZX4V3 4.0 4.5 TZX4V3B 4.1 4.3 100 5 5 1.5
TZX4V3 4.0 4.5 TZX4V3C 4.2 4.4 100 5 5 1.5
TZX4V3 4.0 4.5 TZX4V3D 4.3 4.5 100 5 5 1.5
TZX4V7 4.4 4.9 TZX4V7A 4.4 4.6 100 5 5 2
TZX4V7 4.4 4.9 TZX4V7B 4.5 4.7 100 5 5 2
TZX4V7 4.4 4.9 TZX4V7C 4.6 4.8 100 5 5 2
TZX4V7 4.4 4.9 TZX4V7D 4.7 4.9 100 5 5 2
TZX5V1 4.8 5.3 TZX5V1A 4.8 5.0 100 5 5 2
TZX5V1 4.8 5.3 TZX5V1B 4.9 5.1 100 5 5 2
TZX5V1 4.8 5.3 TZX5V1C 5.0 5.2 100 5 5 2
TZX5V1 4.8 5.3 TZX5V1D 5.1 5.3 100 5 5 2
TZX5V6 5.2 5.9 TZX5V6A 5.2 5.5 40 5 5 2
TZX5V6 5.2 5.9 TZX5V6B 5.3 5.6 40 5 5 2
TZX5V6 5.2 5.9 TZX5V6C 5.4 5.7 40 5 5 2
TZX5V6 5.2 5.9 TZX5V6D 5.5 5.8 40 5 5 2
TZX5V6 5.2 5.9 TZX5V6E 5.6 5.9 40 5 5 2
TZX6V2 5.7 6.6 TZX6V2A 5.7 6.0 15 5 1 3
TZX6V2 5.7 6.6 TZX6V2B 5.8 6.1 15 5 1 3
TZX6V2 5.7 6.6 TZX6V2C 6.0 6.3 15 5 1 3
TZX6V2 5.7 6.6 TZX6V2D 6.1 6.4 15 5 1 3
TZX6V2 5.7 6.6 TZX6V2E 6.3 6.6 15 5 1 3
TZX6V8 6.4 7.2 TZX6V8A 6.4 6.7 15 5 1 3.5
TZX6V8 6.4 7.2 TZX6V8B 6.6 6.9 15 5 1 3.5
TZX6V8 6.4 7.2 TZX6V8C 6.7 7.0 15 5 1 3.5
TZX6V8 6.4 7.2 TZX6V8D 6.9 7.2 15 5 1 3.5
TZX7V5 7.0 7.9 TZX7V5A 7.0 7.3 15 5 1 5.0
TZX7V5 7.0 7.9 TZX7V5B 7.2 7.6 15 5 1 5.0
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Type VZmin. VZmax. Type VZmin. VZmax. rZmax. at IZIRmax. at VR
(V) (V) (V) (V) (
W
) (mA) (
m
A) (V)
TZX7V5 7.0 7.9 TZX7V5C 7.3 7.7 15 5 1 5.0
TZX7V5 7.0 7.9 TZX7V5D 7.5 7.9 15 5 1 5.0
TZX8V2 7.7 8.7 TZX8V2A 7.7 8.1 20 5 1 6.2
TZX8V2 7.7 8.7 TZX8V2B 7.9 8.3 20 5 1 6.2
TZX8V2 7.7 8.7 TZX8V2C 8.1 8.5 20 5 1 6.2
TZX8V2 7.7 8.7 TZX8V2D 8.3 8.7 20 5 1 6.2
TZX9V1 8.5 9.7 TZX9V1A 8.5 8.9 20 5 1 6.8
TZX9V1 8.5 9.7 TZX9V1B 8.7 9.1 20 5 1 6.8
TZX9V1 8.5 9.7 TZX9V1C 8.9 9.3 20 5 1 6.8
TZX9V1 8.5 9.7 TZX9V1D 9.1 9.5 20 5 1 6.8
TZX9V1 8.5 9.7 TZX9V1E 9.3 9.7 20 5 1 6.8
TZX10 9.5 10.6 TZX10A 9.5 9.9 25 5 1 7.5
TZX10 9.5 10.6 TZX10B 9.7 10.1 25 5 1 7.5
TZX10 9.5 10.6 TZX10C 9.9 10.3 25 5 1 7.5
TZX10 9.5 10.6 TZX10D 10.2 10.6 25 5 1 7.5
TZX11 10.4 11.6 TZX11A 10.4 10.8 25 5 1 8.2
TZX11 10.4 11.6 TZX11B 10.7 11.1 25 5 1 8.2
TZX11 10.4 11.6 TZX11C 10.9 11.3 25 5 1 8.2
TZX11 10.4 11.6 TZX11D 11.1 11.6 25 5 1 8.2
TZX12 11.4 12.7 TZX12A 11.4 11.9 35 5 1 9.5
TZX12 11.4 12.7 TZX12B 11.6 12.1 35 5 1 9.5
TZX12 11.4 12.7 TZX12C 11.9 12.4 35 5 1 9.5
TZX12 11.4 12.7 TZX12D 12.2 12.7 35 5 1 9.5
TZX13 12.4 13.4 TZX13A 12.4 12.9 35 5 1 10
TZX13 12.4 13.4 TZX13B 12.6 13.1 35 5 1 10
TZX13 12.4 13.4 TZX13C 12.9 13.4 35 5 1 10
TZX14 13.2 14.3 TZX14A 13.2 13.7 35 5 1 11
TZX14 13.2 14.3 TZX14B 13.5 14.0 35 5 1 11
TZX14 13.2 14.3 TZX14C 13.8 14.3 35 5 1 11
TZX15 14.1 15.5 TZX15A 14.1 14.7 40 5 1 11.5
TZX15 14.1 15.5 TZX15B 14.5 15.1 40 5 1 11.5
TZX15 14.1 15.5 TZX15C 14.9 15.5 40 5 1 11.5
TZX16 15.3 17.1 TZX16A 15.3 15.9 45 5 1 12
TZX16 15.3 17.1 TZX16B 15.7 16.5 45 5 1 12
TZX16 15.3 17.1 TZX16C 16.3 17.1 45 5 1 12
TZX18 16.9 19.0 TZX18A 16.9 17.7 55 5 1 13
TZX18 16.9 19.0 TZX18B 17.5 18.3 55 5 1 13
TZX18 16.9 19.0 TZX18C 18.1 19.0 55 5 1 13
TZX20 18.8 21.2 TZX20A 18.8 19.7 60 2 1 15
TZX20 18.8 21.2 TZX20B 19.5 20.4 60 2 1 15
TZX20 18.8 21.2 TZX20C 20.2 21.2 60 2 1 15
TZX22 20.9 23.3 TZX22A 20.9 21.9 65 2 1 17
TZX22 20.9 23.3 TZX22B 21.6 22.6 65 2 1 17
TZX22 20.9 23.3 TZX22C 22.3 23.3 65 2 1 17
TZX24 22.9 25.5 TZX24A 22.9 24.0 70 2 1 19
TZX24 22.9 25.5 TZX24B 23.6 24.7 70 2 1 19
TZX...
Vishay Telefunken
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Type VZmin. VZmax. Type VZmin. VZmax. rZmax. at IZIRmax. at VR
(V) (V) (V) (V) (
W
) (mA) (
m
A) (V)
TZX24 22.9 25.5 TZX24C 24.3 25.5 70 2 1 19
TZX27 25.2 28.6 TZX27A 25.2 26.6 80 2 1 21
TZX27 25.2 28.6 TZX27B 26.2 27.6 80 2 1 21
TZX27 25.2 28.6 TZX27C 27.2 28.6 80 2 1 21
TZX30 28.2 31.6 TZX30A 28.2 29.6 100 2 1 23
TZX30 28.2 31.6 TZX30B 29.2 30.6 100 2 1 23
TZX30 28.2 31.6 TZX30C 30.2 31.6 100 2 1 23
TZX33 31.2 34.5 TZX33A 31.2 32.6 120 2 1 25
TZX33 31.2 34.5 TZX33B 32.2 33.6 120 2 1 25
TZX33 31.2 34.5 TZX33C 33.2 34.5 120 2 1 25
TZX36 34.2 38.0 TZX36A 34.2 35.7 140 2 1 27
TZX36 34.2 38.0 TZX36B 35.3 36.8 140 2 1 27
TZX36 34.2 38.0 TZX36C 36.4 38.0 140 2 1 27
Characteristics (Tj = 25
_
C unless otherwise specified)
95 9611
0 5 10 15
0
100
200
300
400
500
20
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
l – Lead Length ( mm )
ll
TL=constant
Figure 1. Thermal Resistance vs. Lead Length
0 40 80 120 160
0
100
300
400
500
600
P – Total Power Dissipation ( mW )
tot
Tamb – Ambient Temperature ( °C )
200
95 9602
200
Figure 2. Total Power Dissipation vs.
Ambient Temperature
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Document Number 85614
0 5 10 15 20
1
10
100
1000
V – Voltage Change ( mV )
Z
VZ – Z-Voltage ( V )
25
95 9598
D
IZ=5mA
Tj=25°C
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25
°
C
–60 0 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V – Relative Voltage Change
Ztn
Tj – Junction Temperature ( °C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10
10–4/K 8
10–4/K
–4
10–4/K
6
10–4/K
4
10–4/K
2
10–4/K
–2
10–4/K
0
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
0102030
–5
0
5
10
15
TK – Temperature Coefficient of V ( 10 /K
)
VZ
VZ – Z-Voltage ( V )
50
95 9600
40
Z–4
IZ=5mA
Figure 5. Temperature Coefficient of Vz vs.
Z–Voltage
0 5 10 15
0
50
100
150
200
C – Diode Capacitance ( pF )
D
VZ – Z-Voltage ( V )
25
95 9601
20
Tj=25°C
VR=2V
Figure 6. Diode Capacitance vs.
Z–Voltage
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
Tj=25°C
Figure 7. Forward Current vs.
Forward Voltage
04 81216
20
95 9604
0
20
40
60
80
100
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
Ptot=500mW
Tamb=25°C
Figure 8. Z–Current vs. Z–Voltage
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15 20 25 30
0
10
20
30
40
50
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
35
95 9607
Ptot=500mW
Tamb=25°C
Figure 9. Z–Current vs. Z–Voltage
0 5 10 15 20
1
10
100
1000
r – Differential Z-Resistance ( )
Z
VZ – Z-Voltage ( V )
25
95 9606
W
Tj=25°C
IZ=1mA
5mA
10mA
Figure 10. Differential Z–Resistance vs. Z–Voltage
1
10
100
1000
Z – Thermal Resistance for Pulse Cond. (K/W)
thp
tp – Pulse Length ( ms )95 9603
10–1 100101102
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T=0.05
tp/T=0.02 tp/T=0.01
Single Pulse RthJA=300K/W
D
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj
D
T/Zthp)1/2)/(2rzj)
Figure 11. Thermal Response
Dimensions in mm
Cathode Identification
∅ 1.7 max.
∅ 0.55 max.
3.9 max.26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g 26 min.
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Document Number 85614
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
