Document Number: 94170 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 1
Schottky Rectifier, 240 A
242NQ030PbF
Vishay High Power Products
FEATURES
150 °C TJ operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free
Designed and qualified for industrial level
DESCRIPTION
The 242NQ.. high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
IF(AV) 240 A
VR30 V
HALF-PAK (D-67)
Lug terminal
anode
Base
cathode
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 240 A
VRRM 30 V
IFSM tp = 5 µs sine 27 000 A
VF220 Apk, TJ = 125 °C 0.45 V
TJRange - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 242NQ030PbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 118 °C, rectangular waveform 240
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied
27 000
10 ms sine or 6 ms rect. pulse 3000
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 21 A, L = 1 mH 216 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 48 A
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2Revision: 28-Apr-08
242NQ030PbF
Vishay High Power Products Schottky Rectifier, 240 A
Note
(1) Pulse width = 500 µs
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
240 A TJ = 25 °C 0.54
V
480 A 0.73
240 A TJ = 125 °C 0.47
480 A 0.7
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
20 mA
TJ = 125 °C 1120
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 14 800 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 0.19
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.05
Approximate weight 30 g
1.06 oz.
Mounting torque minimum
Non-lubricated threads
3 (26.5)
N m
(lbf in)
maximum 4 (35.4)
Terminal torque minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
Document Number: 94170 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 3
242NQ030PbF
Schottky Rectifier, 240 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
1000
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.6 1.0 1.20.80.40
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0102030
0.01
1
10
100
1000
10 000
5
0.1
2515
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
02025
30 35
1000
100 000
10
TJ = 25 °C
10 000
515
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
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4Revision: 28-Apr-08
242NQ030PbF
Vishay High Power Products Schottky Rectifier, 240 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0 300 350150
100
120
130
140
150
160
100 250
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
110
50 200
0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0150 250 350
50
100
150
200
50 300
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
100 200
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
1000
100 000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
10 000
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
Document Number: 94170 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 5
242NQ030PbF
Schottky Rectifier, 240 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Average current rating (x 10)
2- Product silicon identification
3- N = Not isolated
4- Q = Schottky rectifier diode
5- Voltage rating (030 = 30 V)
6- Lead (Pb)-free
Device code
51324
6
24 2 N Q 030 PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95020
Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-May-09 1
D-67 HALF-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20)
4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3 - 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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