4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
1 Version:A1612
1A, 50V - 1000V Glass Passivated Rectifier
FEATURES
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
● High surge current capability
● Low power loss, high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.33 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1
A
VRRM
50 - 1000
V
IFSM
30
A
TJ MAX
150
°C
Package
DO-204AL (DO-41)
Configuration
Single Die
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
1N4001
G-K
1N4002
G-K
1N4003
G-K
1N4004
G-K
1N4005
G-K
1N4006
G-K
1N4007
G-K
UNIT
Marking code on the device
1N4001G
1N4002G
1N4003G
1N4004G
1N4005G
1N4006G
1N4007G
Repetitive peak reverse
voltage
VRRM
50
100
200
400
600
800
1000
V
Reverse voltage, total rms
value
VR(RMS)
35
70
140
280
420
560
700
V
Maximum DC blocking
voltage
VDC
50
100
200
400
600
800
1000
V
Forward current
IF(AV)
1
A
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
IFSM
30
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
2 Version:A1612
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-ambient thermal resistance
RӨJA
80
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
IF = 1A,TJ = 25°C
VF
-
1
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 125°C
-
100
µA
Junction capacitance
1 MHz, VR=4.0V
CJ
10
-
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKIN
G CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
1N400xG-K
(Note 1, 2)
A0
G
DO-41
3,000 / Ammo box
(52mm taping)
R0
DO-41
5,000 / 13" Paper reel
R1
DO-41
5,000 / 13" Paper reel
(Reverse)
B0
DO-41
1,000 / Bulk packing
Notes:
1. "x" defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K)
2. Whole series with green compound (halogen-free)
EXAMPLE P/N
EXAMPLE P/N
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
1N4001G-K A0G
1N4001G-K
A0
G
Green compound
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
3 Version:A1612
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
0
0.5
1
1.5
025 50 75 100 125 150
AMBIENT TEMPERATURE(oC)
1
10
100
0.1 1 10 100
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
0.01
0.1
1
10
100
020 40 60 80 100 120 140
TJ=125°
TJ=75°C
TJ=25°C
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
4 Version:A1612
0
5
10
15
20
25
30
110 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES AT 60 Hz
Fig5. Maximum Non-repetitive Forward Surge Current
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
5 Version:A1612
PACKAGE OUTLINE DIMENSIONS
DO-204AL (DO-41)
MARKING DIAGRAM
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
2.00
2.70
0.079
0.106
B
0.71
0.86
0.028
0.034
C
25.40
-
1.000
-
D
4.20
5.20
0.165
0.205
E
25.40
-
1.000
-
4 1N4001G-K - 1N4007G-K
Taiwan Semiconductor
6 Version:A1612
Notice
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