IRFBA34N50C
6/2/00
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PD- 93931
SMPS MOSFET HEXFET® Power MOSFET
lSwitch Mode Power Supply (SMPS)
lUninterruptIble Power Supply
lHigh Speed Power Switching
Benefits
Applications
lLow Gate Charge Qg results in Simple
Drive Requirement
lImproved Gate, Avalanche and Dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
VDSS RDS(on) typ. ID
500V 0.070Ω40A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 40
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 25 A
IDM Pulsed Drain Current 160
PD @TC = 25°C Power Dissipation 310 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case ) °C
Recommended clip force 20 N
Absolute Maximum Ratings
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 480 mJ
IAR Avalanche Current––– 34 A
EAR Repetitive Avalanche Energy––– 31 mJ
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.40
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 58
Thermal Resistance
PROVISIONAL
Super-220™
IRFBA34N50C
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PROVISIONAL
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 24A, VGS = 0V
trr Reverse Recovery Time ––– 510 770 n s TJ = 125°C, IF = 20A
Qrr Reverse RecoveryCharge – –– 11 17 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
D
G
Diode Characteristics
40
160 A
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 0 ––– – –– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.68 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.070 0.075 ΩVGS = 10V, ID = 24A
VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 500V, VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 20A, di/dt ≤ 42A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting T J = 25°C, L = 0.83mH, RG = 25Ω,
IAS = 34A,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 20 ––– ––– S VDS = 50V, ID = 20A
QgTotal Gate Charge –– – 190 ––– ID = 20A
Qgs Gate-to-Source Charge – –– 45 ––– nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– 90 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 23 ––– VDD = 250V
trRise Time ––– 29 ––– ID = 20A
td(off) Turn-Off Delay Time –– – 55 ––– RG = 1.3Ω
tfFall Time ––– 6 .3 ––– VGS = 10V,
Ciss Input Capacitance ––– 6330 ––– VGS = 0V
Coss Output Capacitance ––– 3600 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 140 – –– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 15150 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 140 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 460 ––– VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
IRFBA34N50C
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PROVISIONAL
Super-220™ Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
