ee Discrete POWER & Signal FAIRCHILD Technologies a SEMICONDUCTOR m BCW65C SOT-23 Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absol ute Maxi mum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VeceEo Collector-Emitter Voltage 32 Vv Veso Collector-Base Voltage 60 Vv Veo Emitter-Base Voltage 5.0 Vv lo Collector Current - Continuous 1.0 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units *BCW65C Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mWwW/eC Rega Thermal Resistance, Junction to Ambient 357 C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 41997 Fairchild Semiconductor Corporation JSIMOEElectrical Characteristics NPN General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vieryceo Collector-Emitter Breakdown Voltage lo = 10 mA, lz =0 32 Vv Vierycso0 Collector-Base Breakdown Voltage lo = 10 pA, Ie = 0 60 Vv VieR)EBO Emitter-Base Breakdown Voltage le=10pA, Ip =0 5.0 Vv Ices Collector-Cutoff Current Vog = 32 V, le =0 20 nA Vop = 32 V, lE= 0, Ta = 150C 20 uA leso Emitter-Cutoff Current Vep=4.0V, Io =0 20 nA ON CHARACTERISTICS Hee DC Current Gain Io = 100 WA, Veg = 10 V 80 lg =10 mA, Vee = 1.0 V 180 Ig = 100 mA, Vog = 1.0 V 250 630 Io = 500 mA, Veg = 2.0 V 50 Veeisaty Collector-Emitter Saturation Voltage lo = 100 mA, Iz = 10 MA 0.3 Vv Ic = 500 mA, = 50 mA 0.7 Veesaty Base-Emitter Saturation Voltage lo = 500 mA, Ip = 50 mA 2.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product lo = 20 mA, Voce = 10 V, 100 MHz f = 100 MHz Cobo Output Capacitance Vop = 10 V, Ie =0, f = 1.0 MHz 12 pF Cibo Input Capacitance Veg = 0.5 V, Io = 0, f= 1.0 MHz 80 pF NF Noise Figure lo = 0.2 mA, Voce = 5.0, 10 dB Rs = 1.0 kQ, f = 1.0 kHz, BW = 200 Hz Typical Characteristics Typical Pulsed Current Gain vs Collector Current ao oO oO nN Qo oO wo oO oO nN oO oO o oO - 40C o 0.3 1 3 10 30 100 Ic - COLLECTOR CURRENT (mA) 300 hre - TYPICAL PULSED CURRENT GAIN Collector-Emitier Saturation Voltage vs Collector Current n B =10 9 w o to 10 100 - COLLECTOR CURRENT (mA) Veesar7 COLLECTOR-EMITTER VOLTAGE (V) 500 JSIMOENPN General Purpose Amplifier (continued) Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current B =10 Vpesar- BASE-EMITTER VOLTAGE (V) 1 10 100 |, - COLLECTOR CURRENT (mA) 500 Collector-Cutoff Current vs Ambient Temperature lcao COLLECTOR CURRENT (nA) | ] 25 50 75 100 125 150 T, - AMBIENT TEMPERATURE (CC) Base-Emitter ON Voltage vs Collector Current Voge =5V -40C e n o io 1 10 25 I, - COLLECTOR CURRENT (mA) Veeionr BASE-EMITTER ON VOLTAGE (V) Oo a Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f=1MHz o CAPACITANCE (pF) oo ) 4 Cob 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) Power Dissipation vs Ambient Temperature P,,- POWER DISSIPATION (mW) > = y DY BO w& ao 029 @ Sa 6S GB o 6 6 6 G6 6 6 oO 0 25 50 75 100 TEMPERATURE (C) 125 150 JSIMOETRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.