1
Motorola Thyristor Device Data
Reverse Blocking Triode Thyristors
. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
•Center Gate Geometry for Uniform Current Density
•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking
Voltage(1)
(TJ = –40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)MCR310-2
MCR310-3
MCR310-4
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
50
100
200
400
600
800
Volts
On-State RMS Current (TC = 75°C) IT(RMS) 10 Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to 110°C) ITSM 100 Amps
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Peak Gate Voltage (t
p
10 µs) VGM ±5 Volts
Peak Gate Current (t
p
10 µs) IGM 1 Amp
Peak Gate Power (t
p
10 µs) PGM 5 Watts
Average Gate Power PG(AV) 0.75 Watt
Operating Junction Temperature Range TJ–40 to +110 °C
Storage Temperature Range Tstg –40 to +150 °C
Mounting Torque – 8 in.-lb.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by MCR310/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
CASE 221A-04
(TO-220AB)
STYLE 3
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
C
G
A
KAG
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Forward Blocking Current(1) TC = 110°C
(TJ = 110°C, VD = Rated VDRM) TC = 25°CIDRM —
——
—500
10 µA
µA
Peak Reverse Blocking Current(1) TC = 110°C
(TJ = 110°C, VR = Rated VRRM) TC = 25°CIRRM —
——
—500
10 µA
µA
On-State Voltage
(ITM = 20 A Peak, Pulse Width
p
1 ms, Duty Cycle
p
2%) VTM — 1.7 2.2 Volts
Gate Trigger Current, Continuous dc(2)
(VD = 12 V, RL = 100 Ω)IGT — 30 200 µA
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100 Ω)
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)
VGT —
0.1 0.5
—1.5
—
Volts
Holding Current
(VD = 12 V, ITM = 100 mA) IH— — 6 mA
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform) dv/dt — 10 — V/µs
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA) tgt — 1 — µs
1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.
Figure 1. Average Current Derating Figure 2. On-State Power Dissipation
Figure 3. Normalized Gate Current Figure 4. Gate Voltage
0.3 120
0.5
1
2
–40 –20 0 20 40 60 80 90 100
3
140
VD = 12 Vdc
8
TJ, JUNCTION TEMPERATURE (
°
C)
0 2 4
110
6
70
80
90
100
10
120
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
α
= 30
°
180
°
dc
α
= CONDUCTION ANGLE
0.6
α
0.1
0.2
0.3
0.4
0.5
40
0.7
–60 –40 –20 0 10020 60 80 120
VD = 12 Vdc
0 2 4 6 8
16
TJ, JUNCTION TEMPERATURE (
°
C)
0
4
8
12
20
α
α
= CONDUCTION ANGLE
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
90
°
180
°
dc
T , MAXIMUM CASE TEMPERATURE ( C)
C
°
NORMALIZED GATE CURRENT
P , AVERAGE POWER DISSIPATION (WATTS)
AV
V , GATE TRIGGER VOLTAGE (VOLTS)
GT
60
°
α
= 30
°
60
°
90
°
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.055 1.15 1.39
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
A
K
L
V
GD
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING
PLANE
S
R
J
U
TC
4 Motorola Thyristor Device Data
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MCR310/D
*MCR310/D*
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