PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET(R) Power MOSFET Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max TO-220AB IRFB52N15DPbF 150 200 32 175 D2Pak IRFS52N15DPbF V V m: C TO-262 IRFSL52N15DPbF Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw 51* 36* 240 3.8 230* 1.5* 30 5.5 -55 to + 175 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient Typ. Max. --- 0.50 --- --- 0.47* --- 62 40 Units C/W * RJC (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through www.irf.com are on page 11 1 09/22/10 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.16 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 32 m VGS = 10V, ID = 36A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 19 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 60 18 28 16 47 28 25 2770 590 110 3940 260 550 Max. Units Conditions --- S VDS = 50V, ID = 36A 89 ID = 36A 27 nC VDS = 75V 42 VGS = 10V, --- VDD = 75V --- ID = 36A ns --- R G = 2.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy VDS (Avalanche) c dh c Repetitive Avalanche Voltage c Min. Typ. Max. Units --- --- 470 mJ --- --- 36 A --- 450 --- mJ 200 --- --- V Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 60 --- --- showing the A G integral reverse --- --- 240 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 36A, VGS = 0V --- 140 210 nS TJ = 25C, IF = 36A --- 780 1170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 5.0V 1 100 10 5.0V 1 300s PULSE WIDTH Tj = 175C 300s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000.00 3.0 I D = 60A 2.5 T J = 175C T J = 25C 10.00 VDS = 15V 300s PULSE WIDTH 1.00 5.0 7.0 9.0 11.0 13.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 15.0 2.0 (Normalized) 100.00 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current () 10 VDS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss 12 VGS, Gate-to-Source Voltage (V) 100000 ID = 36A VDS = 120V VDS = 75V 10 8 6 4 2 0 10 0 1 10 100 1000 1000 ID , Drain-to-Source Current (A) 1000.00 100.00 10.00 T J = 25C 1.00 50 60 70 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.10 0.1 0.5 40 100 T J = 175C 0.0 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 20 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 2.5 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 70 RD V DS 60 VGS 50 I D , Drain Current (A) D.U.T. RG + -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 TC , Case Temperature 150 ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 900 15V ID 15A 26A 36A TOP + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG 720 DRIVER L VDS BOTTOM 540 360 180 0 25 50 75 100 125 Starting Tj, Junction Temperature 150 175 ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS SEMBLY LINE "C" Note: "P" inass embly line position indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TO-220 package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE ASSEMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = ASS EMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: 1% Duty cycle, 100 pulses, limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25C, L = 0.72mH This is only applied to TO-220AB package. RG = 25, IAS = 36A. This is applied to D2Pak, when mounted on 1" square PCB ISD 36A, di/dt 400A/s, VDD V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering TJ 175C. techniques refer to application note #AN-994. Pulse width 300s; duty cycle 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 www.irf.com 11