© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
1Publication Order Number:
BTA16−600BW3/D
BTA16-600BW3G,
BTA16-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
•Blocking Voltage to 800 V
•On-State Current Rating of 16 A RMS at 80°C
•Uniform Gate Trigger Currents in Three Quadrants
•High Immunity to dV/dt − 1500 V/ms minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO-220AB Package
•High Commutating dI/dt − 4.0 A/ms minimum at 125°C
•Internally Isolated (2500 VRMS)
•These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA16−600BW3G
BTA16−800BW3G
VDRM,
VRRM
600
800
V
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS) 16 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM 170 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 120 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width ≤1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1.0 W
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A
STYLE 12
http://onsemi.com
BTA16−xBWG
AYWW
MARKING
DIAGRAM
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
BTA16−600BW3G TO−220AB
(Pb−Free)
50 Units / Rail
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4No Connection
MT1
G
MT2
BTA16−800BW3G TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
123
4
BTA16−600BW3G, BTA16−800BW3G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
RqJC
RqJA
2.13
60
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM −
−
−
−
0.005
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ±22.5 A Peak)
VTM − − 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
2.5
2.5
2.5
−
−
−
50
50
50
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
IH− − 60 mA
Latching Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
−
−
−
70
90
70
mA
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5
0.5
0.5
−
−
−
1.7
1.1
1.1
V
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
0.2
0.2
0.2
−
−
−
−
−
−
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
(dI/dt)c4.0 − − A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT
, tr ≤100 ns)
dI/dt − − 50 A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt 1500 − − V/ms
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
BTA16−600BW3G, BTA16−800BW3G
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 −VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
BTA16−600BW3G, BTA16−800BW3G
http://onsemi.com
4
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (A)
125
120
115
110
105
100
95
90
85
80 1614121086420
TC, CASE TEMPERATURE ( C)°
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (A)
1614121086420
20
18
16
14
12
10
8
6
4
2
PAV, AVERAGE POWER (WATTS)
0
DC
α = 30 and 60°
α = 90°
α = 120°α = 180°
DC 180°
120°
90°
60°
α = 30°
Figure 3. On-State Characteristics
VT
, INSTANTANEOUS ON-STATE VOLTAGE (V)
IT, INSTANTANEOUS ON‐STATE CURRENT (AMP)
Figure 4. Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
0.1
0.01 1·104
10001001010.1
Figure 5. Hold Current Variation
0.1
1
10
100
1000
0.5 1 1.5 2 2.5 3
TJ, JUNCTION TEMPERATURE (°C)
IH, HOLD CURRENT (mA)
MT2 Positive
MT2 Negative
5
10
15
20
25
30
35
40
45
50
55
−40 −25 −10 5 20 1251109580655035
Typical @ TJ = 25°C
Typical @ TJ = 125°C
Typical @
TJ = −40°C
Typical @ TJ = 125°C
Typical @ TJ = 25°C
T
yp
ical @ T
J
= −40°C
Typical @
TJ = −40°C
BTA16−600BW3G, BTA16−800BW3G
http://onsemi.com
5
Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ s)μ
VD = 800 Vpk
TJ = 125°C
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
NON‐POLAR
CL
51 W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)
1
10
100
VD = 12 V
RL = 30 W
Q3
Q1
Q2
IGT
, GATE TRIGGER VOLTAGE (mA)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VD = 12 V
RL = 30 W
Q1
Q3
Q2
−40 −25 −10 5 20 1251109580655035 −40 −25 −10 5 20 1251109580655035
BTA16−600BW3G, BTA16−800BW3G
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
−T−SEATING
PLANE
S
R
J
U
TC
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
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BTA16−600BW3/D
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