2SC1008 - Transys Electronics - Datasheet.Directory

TO-92 Plastic-Encapsulated Transistors

2SC1008 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 0.8 W (Tamb=25℃)

Collector current

ICM: 0.7 A

Collector-base voltage

V(BR)CBO: 80 V

Operating and storage junction temperature range

TJ, T stg: -55 ℃ to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base br eakdown voltage V(BR)CBO Ic= 100µA , IE=0 80 V

Collector-emitter breakdown voltage V(BR)CEO I

C= 10mA , IB=0 60 V

E mitter-base breakdow n volt age V(BR)EBO IE= 10µA, IC=0 8 V

Collector cut-off current ICBO V

CB=60 V , IE=0 0.1

µA

Emitte r c u t -o ff current IEBO V

EB= 5 V , I C=0 0.1

µA

DC current gain hFE V

CE= 2 V, IC=50mA 40 400

Collector-emitter saturation voltage VCE(sat) I

C= 500mA, IB=50 mA 0.4 V

Base-emitter satu ration voltage VBE(sat) I

C=500mA, IB=50mA 1.1 V

Transition fre quency f T VCE=10V, IC= 50mA 30 MHz

CLASSIFICATION OF hFE

Rank R O Y G

Range 40-80 70-140 120-240 200-400

1 2 3

TO-92

1. E MITTER

2. BASE

3. COLLECTOR

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