PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET olitron DEVICES. INC. | 3 2 3 Pulse test: Pulse Width <300s8S, Duty Cycle <2z. Repetitive Rating: Pulse Width limited By Max.junction Temperature. 6OOV 2OA O 35 Q ABSOLUTE MAXIMUM RATINGS % . PARAMETER SYMBOL UNITS SDF ZONGO GAF Drain-source Volt.(1) Voss 600 Vdc Drain-Gate Voltage : FEATURES (Resi 6H) U1) vos 600 vac Gate-Source Voltage Continuous VGS +20 Vde @ RUGGED PACKAGE Drain Current Continuous ID 20 Ade @ HI-REL CONSTRUCTION (Tc = 25C) @ CERAMIC EYELETS Drain Current Pulsed(3) 10M 80 A @ LEAD BENDING OPTIONS Total Power Dissipation PD 300 W COPPER CORED S2. ALLOY PINS Power Dissipation 2 W/ec @ LOW IR LOSSES. Derating > 25C 4 @ LOW THERMAL RESISTANCE Operating & Storage Temp. | TU/Tsig -55 TO +150 C @ OPTIONAL MIL-S-19500 Thermal Resistance RthJdc 0.42 C/W SCREENING Max.Lead temperature TL 300 C SCHEMATIC ELECTRICAL CHARACTERISTICS Te=25" (WKE'SONET (D) ce : cn PARAMETER SYMBOL} TEST CONDITIONS MINJTYP | MAX JUNITS Drain-source VGS=0V . 1] GATE 1] DRAIN Breakdown Vo 1 t JVCBR)DSS 1D=250 A 600] - - Vv , 2 {DRAIN 12} SOURCE | |Gate Threshold |yes(tH)/vps-ves 1D=250qmA |2.0| - /4.5| v (S) [3 [Source [3[ Gate voltage (4) e : = IGSS - |VGS=420 V - ~ |100] nA STANDARD BEND | GAF | [Leskase Zero Gate VDS=MAX.RATING VGS=0| | [250] HA CONF IGURAT IONS Voltage Drain | IDSS [yps=0.8 MAX.RATING Current VGS=0 TU=125C - - 41000 HA Static Drain- : VGS=10 V _ Sour On-State/RDS(ON ~ - - |.35/ 9 Resistance(1) DS(ON) ID=10A Forward Trans- VDS 2 SO V Conductance (2) gfs IDS=10A 3.0] - - {S(0) Input Capacitance} CISS ~ 14500] - pF Output Capacitance! COSS Yes =OV oe es v - |550/] - pF Bevecieer "| cess | = [ico| = | oF Turn-On Delay |td(on)|ypo=300V = Zo=50a - | - |100| ns Rise Time tr (noseet itching ti - | - [ito] ns Turn-Off Delayjtd(off)| are essentially indepen- - ~ |220| ns Fall Time tf [dent of operating temp.) "7 _"Jy951 ns Total Gate Charge Gate Source Plus| Qg - 1165; - nc ate VDS=0.8 MAX. RATING Gate-Source =. . Charge Qs (Gate charge is essenti- - {65} - | ne = : a independent o e Omi eee) Qsd operat ing temperature - li00} - nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (MESS OTHERS PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP .}MAX . JUNITS Continuous te: Source Current] IS pool choo ns the -|- 120] A (Body Diode) integral reverse . {Pulse Source P-N junction recti- |Current (Body | ISM [fier (See.schematic)} - | - | 80] A Diode) (1) Diode Forward 1F=20A _ VGS=0V _ - Voltage (2) | VSD |tee+25ec 1.5) V Reverse =+90Ge - _ Recovery Time ter |Te=*25 C 300 ns Reverse Re- IF=20A (CUSTOM BEND OPTIONS AVAILABLE) covery Charge | Orr jdi/dt=100A/ HS ~ 78.07 | pe TJ = 25C to 150C. A36