AO8807
Symbol Min Typ Max Units
BVDSS -12 V
-1
TJ=55°C -5
IGSS ±10
A
VGS(th) -0.35 -0.53 -0.85
ID(ON) -60 A
16 20
TJ=125°C 23 28
19 24 m
23 30 m
28 36 m
gFS 45 S
VSD -0.56 -1 V
IS-1.4 A
Ciss 1740 2100 pF
Coss 334 pF
Crss 200 pF
Rg1.3 1.7 k
Qg19 23 nC
Qgs 4.5 nC
Qgd 5.3 nC
tD(on) 240 ns
tr580 ns
tD(off) 7
s
tf4.2
s
trr 22 27 ns
Qrr 17 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-1.5V, ID=-5A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-6.5A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-12V, VGS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±8V
Gate-Body leakage current
mΩ
VGS=-2.5V, ID=-6A
IS=-1A,VGS=0V
VDS=-5V, ID=-6.5A
VGS=-1.8V, ID=-5.5A
IF=-6.5A, dI/dt=100A/µs
VGS=0V, VDS=-6V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-6V, ID=-6.5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off Delay Time
VGS=-4.5V, VDS=-6V, RL=0.9Ω,
RGEN=3Ω
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Delay Time
DYNAMIC PARAMETERS
Gate resistance VGS=0V, VDS=0V, f=1MHz
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev1 :April 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com