Data Sheet Switching Diode UMN11N Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 0.65 2.00.2 Each lead has same dimension 0.25 0.1 0.05 (6) (5) (1) (2) 0.150.05 (4) 0.9 2.10.1 1.250.1 1.6 Features 1) Small mold type. (UMD6) 2) High reliability. 0.65 00.1 0.65 0.65 UMD6 0.7 1.30.1 Construction Silicon epitaxial planar 0.35 0.1Min (3) 0.90.1 ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Structure Taping specifications (Unit : mm) 1.50.1 0 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 1.10.1 4.00.1 2.20.1 Limits 2.40.1 8.00.2 5.50.2 00.5 2.40.1 2.450.1 3.50.05 1.750.1 4.00.1 1.150.1 Unit V V mA mA A mW C C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet UMN11N Ta=150 10000 Ta=125 10 Ta=25 Ta=150 Ta=-25 1 0 f=1MHz 1000 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 100 200 300 400 500 600 700 800 900 1000 1 0.1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 80 90 930 920 910 AVE:921.7m 80 70 60 50 40 AVE:9.655nA 30 20 900 1.3 1.2 1.1 1 0.8 0.7 0.6 0 0.5 IR DISPERSION MAP Ct DISPERSION MAP 10 8.3ms 10 5 AVE:3.50A 8 7 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 6 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 300us 1 0.001 100 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.081pF 0.9 10 VF DISPERSION MAP 20 20 Ta=25 VR=6V f=1MHz n=10pcs 1.4 Ta=25 VR=80V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 940 REVERSE CURRENT:IR(nA) Ta=25 IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 100 950 FORWARD VOLTAGE:VF(mV) 10 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 4 3 2 1 0 1000 AVE:2.54kV AVE:0.97kV C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A