BAX 18(A) BAX 20 BAX 21 BAX 22 BAX 25 BAX 26 BAX 27, BAX 28 BAX 30 BAX 90 C BAX 91(A...C) BAX 92 BAX 93 BAX 94 BAX 95 BAX 96(A...C)_ BAX 157 BAX 158 BAX 159 BAY BAY 14 BAY 15 BAY 16 BAY 17 BAY 18 BAY 19 BAY 20 BAY 21 BAY 23 BAY 24 BAY 25 BAY 26 _PhiTix Aeg Aeg _Aeg Aeg Aeg _Aeg Sie Sie Sgs Sqs Sas Sgs_ Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sas, Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs_ Sgs Sos Sgs Sgs Sgs Sgs Sos Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs Sgs SIS Tix Phi, Tix _Sas Tix Tix Tix TK, Tho, Tix Tho, Tix Tix Tix Tix Tix Tix Tix Tix Tix Tix Tix Tix (dr \dr fdr Aeg Aeg Aeg Itt, Tho, Tix Itt, Tho, Tix Itt, Tho, Tix ttt, Tho, Tix fi, Tho, Tix Itt, Tho Itt, The Itt, Tho Itt,The Si-Di Uni, 75V, 0,5/2A, Uf<2V(2A), A:Uf<1,4V(2A) Sa SOD-17 BA 159 3a BA 157...159, BY 402, BY 295/..., +4 Si-Di S, Uni, 25/35V, 115/225mA, Uf<1V(0,1A), <250ns 31a 00-35 ~=1N41480ti(it*i "BAX 15...17, BAX 88, 1N4148,4+ Si-Di =BAX 20; 50/75V 3ta DO-35 1N4148 3a BA 197...159, BAX 15,..17, 1N4148, ++ Si-Di =BAX 20: 100/125V 31a 00-35 BA 159 31a BA 157...159, BA 173, BAX 15...17, ++ Si-Di Schottky, $8, 30V, 0,08A(ss),Uf<0,8V(15mA), <0,5ns 31a DO-7 _ " TT S-Di Schottky, SS, 30V, 0,1A(ss),Uf<0,86V(30mA), <0,5ns 31a 00-35 _Si-Di Schottky, $$, 30V, 0,5A(ss),Uf<0,91V(150mA),<0,5ns 3a DO-35 - Si-Di 3-Di Array, 25V, 115/225mA, Uf<1V(30mA), <4ns 5(AAAK} - TO-72 7 :_ ~ S-Di = =BAX 28: 5(KKKA) _TO-72 - Si-Di RadH, 250V, Uf<0,85V(0,1A) 7 3a DO-7 - a ~ Si-Di Dual, SS, 20/30V, 115/225mA, Uf<1V(10mA), <2ns 42(AAKK) (7x11x5mm) a 7 oo Si-Di Dual, SS, 20/30V, 115/225mA, Uf<1(10mA), <2ns 42(AAKK) (?x11x5mm)} - S-Di __Dual, SS, 20/80V, 115/225mA, Ufe1V(10mA), <2ns 42(AAKK) _(7xt1x5mm) : Si-Di Dual, S, 50/75V, 0,15/0,3A, Uf<1V(50mA), <50ns 42(AAKK) 7x11x5mm) OO Si-Di Dual, S, 50/75Y, 0,15/0,3A, Uf<1V(50mA), <50ns 42(AAKK) 7x11xSmm) Si-Di Dual, S, 50/75V, 0,15/0,3A, Uf<1V(50mA), <50ns 42(AAKK) _(7x11x5mm) Si-Di =BAX 33: 4-Di 42x11x5mm Oe Si-Di =BAX 34: 4-Di 12x11x5mm - Si-Di =BAX 35: 4-Di 12x11x5mm - Si-Di =BAX 36: 4-Di 12x11x5mm - Si-Di =BAX 37: 4-Di 12x11x5mm : Si-Di __=BAX 38: 4-Di _ . 12x11x5mm - Si-Di Dual,Logic Gate, 40/80V, 0,3/1A, Uf<1V(0,1A),<25ns 2rS:ST-S _ - Si-Di =BAX 45: ar T0-18 - Si-Br =BAX 45: Quad(Br) 5 TO-12 - Si-Br =BAX 45: Quad(Br) 5 T0-72 - Si-Di =BAX 45: 6 Di TO-100 - Si-Di =BAX 45: 8 Di 0-100 - Si-Di =BAX 45: 16 Di TO-100 - Si-Br =BAX 45: Quad(Br) 5 TO-12 : Si-Br =BAX 45: Quad(Br) 5 T0-72 Si-Di =BAX 45: Quad(Ring-Dem) 5 TO-12 Si-Di_ =BAX 45: Quad(Ring-Dem) 5 T0-72 - _ Si-Di Dual,Logic Gate, 40/60V, 0,3/1A, Uf<1V(0,1A), <4ns af TO-5 - a Si-Di =BAX 56: an TO-5 - Si-Di =BAX 56: of T0-72 - Si-Di =BAX 56: an TO-72 - Si-Di =BAX 56: 3 Di 5(AAKA) -TO-12 - Si-Di =BAX 56: 3 Di (KKAK} TO-12 - Si-Di =BAX 56: 3 Di 5(AAKA) -TO-72 - Si-Di =BAX 56: 3 Di 5(KKAK} -TO-72 - Si-Di =BAX 56: 4 Di TO-99 - Si-Di =BAX 56: 4 Di T0-99 - Si-Di =BAX 56: 5 Di T0-99 - Si-Di =BAX 56: 5 Di 0-99 - Si-Di =BAX 56: 6 Di T0-99 Si-Di =BAX 56: 6 Di T0-99 Si-Di =BAX 56: 7 Di TO-99 Si-Di =BAX 56: 7 Di TO-99 Si-Di =BAX 56: 8 Di TO-100 Si-Di =BAX 56: 8 Di TO-100 ee Si-Di _S, 25/30V, Uf<1V(30mA), <10ns 10 1N4148 3a. _BA317...318, BAY 38, BAY 71, 1N4148, ++ Si-Di S, 55/55V, 0,3/0,6A, Uf<0,95V(0,1A), <20ns 3a 00-7 1N4148 3a BA 318, BAY 38, BAY 69, 1N4148, ++ Si-Di __ 8, SOV, 0,4/0,6A, Uf<0,92V(0,1A), <4ns. 31a D0-7 (1N4148) 3ta BAV 13,BAV 14, BAW 24.27 Si-Di , 50V, 0,15A, Uf<1V(10mA), <4ns 3ta 00-35 1N4148 3a BAX 80, BAW 62, BAY 95, 1N4148, ++ Si-Di S, 90/90V, 0,35/0,5A, Uf<1V(0,1A), <6ns 31a 0-35 (1N4148) 31a BAV 14 Si-Di S, 50/SOV, 0,25/0,5A, Uf