NOTES : 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4. 0V DC.
3.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
A
=
75 C
@T
J
=100 C
PR1001 thru PR1007
FAST RECO V E RY RE C T IF IERS
FEATURES
Fast switching for high efficiency
Low cost
Diffused junction
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
ME CHANICAL DATA
Case : JEDEC DO -41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATING S AND ELECTRICAL CHARACTER ISTICS
Ra tin gs at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PR1003
200
140
200
PR1001
50
35
50
PR1007
1000
700
1000
PR1002
100
70
100
PR1006
800
560
800
PR1005
600
420
600
PR1004
400
280
400
Maxim um Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum R ecu rrent P eak Reverse Volt age
Maximu m RMS Volt a ge
Maxim um DC Blocking Voltage
Maximu m forw ard Voltage at 1 . 0A D C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
1.0
30
1.2
5
100
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Tem perature Range
-55 to +150 C
Typic al Thermal Resistance (Note 3)
R
0JA
25
C/W
C
J
Typical Junction
Capacitance (Note 2)
25
pF
uA
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.71
2.0 0 2.70
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 1)
T
RR
150 250 500
15
ns
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDBC04
RATING AND CHARACT ERISTIC CURVES
PR1001 thru PR1007
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-Wave
(J EDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
25
75 100 125 150
0.6
0 50
0.2
1.0
175
SINGLE PHASE HALF W AVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
AMBIENT TEMPERATURE , C
0.8
0.4
IN STANTANEOUS F ORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
100
10
1
PR1005 to PR1007
PR1001 to PR1004
11
4
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDBC04
