1/19/2000
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current 220
ILM Clamped Inductive Load Current 220
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 170 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4BAC50W
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
Features
• Designed expressly for switch-mode power
supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300kHz)
Benefits
VCES = 600V
VCE(on) max. = 2.30V
@VGE = 15V, IC = 27A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight TBD ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
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N-channel
Super-220™
(TO-273AA)
PROVISIONAL
PD -93769
IRG4BAC50W
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 18 0 27 0 IC = 27A
Qge Gate - Emitter Charge (turn-on) — 24 36 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 63 95 VGE = 15V
td(on) Turn-On Delay Time — 46 —
trRise Time — 33 — TJ = 25°C
td(off) Turn-Off Delay Time — 120 180 IC = 27A, VCC = 480V
tfFall Time — 57 86 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.32 — m J See Fig. 9, 10, 14
Ets Total Switching Loss — 0.40 0.5
td(on) Turn-On Delay Time — 31 — TJ = 150°C,
trRise Time — 43 — IC = 27A, VCC = 480V
td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 5.0Ω
tfFall Time — 62 — Energy losses include "tail"
Ets Total Switching Loss — 1.14 — m J See Fig. 10,11, 14
LCInternal Collector Inductance — 2.0 — nH Measured 5mm from package
LEInternal Emitter Inductance — 5 .0 —
Cies Input Capacitance — 3700 — VGE = 0V
Coes Output Capacitance — 260 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 68 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.41 — V/°C VGE = 0V, IC = 5.0mA
— 1.93 2.3 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.25 — IC = 5 5A See Fig.2, 5
— 1.71 — IC = 27A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, I C = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance … 27 41 — S VCE = 100 V, IC = 27A
— — 250 VGE = 0V, V CE = 600V
— — 2.0 VGE = 0V, V CE = 10V, TJ = 25°C
— — 5000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4BAC50W
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1 10
V , Collector-to-Emitter Volta
g
e (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20
µ
s PULSE WIDTH
GE
T = 150 C
J°
T = 25 C
J°
1
10
100
1000
5 6 7 8 9 10 11
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5
µ
s PULSE WIDTH
CC
T = 150 C
J°
T = 25 C
J°
0
20
40
60
80
100
0.1 1 10 100 1000
f, Fre
q
uenc
y
(
kHz
)
A
60% of rated
voltage
Ideal diodes
Sq uare wave:
F or both:
D uty cycle: 50%
T = 125°C
T = 90°C
G ate drive as specified
sink
J
Powe r D iss ip ation = 40W
Tria ng ular w ave:
Clamp voltage:
80% of rated
Load Current ( A )
IRG4BAC50W
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A54
C
I = A27
C
I = A13.5
C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
10
20
30
40
50
60
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
IRG4BAC50W
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-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
54
C
I = A
27
C
I = A
13.5
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 27A
CC
C
5.0Ω
1 10 100
0
2000
4000
6000
8000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c
Cies
Coes
Cres
010 20 30 40 50
0.0
1.0
2.0
3.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 27A
CC
GE
J
C
°
RG , Gate Resistance (Ω)
IRG4BAC50W
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010 20 30 40 50 60
0.0
1.0
2.0
3.0
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Turn-Off SOA
1
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Volta
g
e (V)
I , Collector-to-Emitter Current (A)
CE
C
5.0Ω
IRG4BAC50W
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480V
4 X IC@25°C
D.U.T.
50V
LV *
C
* Driver same t
y
p
e as D.U. T.; Vc = 80% of Vce
(
max
)
* No te: D ue to th e 50V
p
ower s u
p
p
l
y
,
p
ulse width a nd inductor
will in cr e ase t o o btain rate d Id .
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V RL =
t=5µs
d(on)
tt
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts o n o ff
E = (E +E )
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
IRG4BAC50W
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
Super-220™ (TO-273AA) Package Outline
