BZW04-5V8 thru BZW04-376 www.vishay.com Vishay General Semiconductor TransZorb(R) Transient Voltage Suppressors FEATURES * Glass passivated chip junction * Available in uni-directional and bi-directional * 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability * Very fast response time * Low incremental surge resistance DO-204AL (DO-41) * Solder dip 275 C max. 10 s, per JESD 22-B106 * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VWM 5.8 V to 376 V PPPM 400 W PD 1.5 W IFSM (uni-directional only) 40 A TJ max. 175 C Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: DO-204AL, molded epoxy over passivated chip DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional BZW04P-6V4B). types, use B suffix (e.g. Electrical characteristics apply in both directions. Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note BZW04-213(B) to BZW04-376(B) for commercial grade only Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 C unles otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (1) (fig. 1) Peak pulse current with a 10/1000 s waveform (1) Power dissipation on infinite heatsink at TL = 75 C (fig. 5) Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 25 A for uni-directional only (3) Operating junction and storage temperature range SYMBOL LIMIT UNIT PPPM 400 W IPPM See next table A PD 1.5 W IFSM 40 A VF 3.5/5.0 V TJ, TSTG - 55 to + 175 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above F F Revision: 08-May-12 Document Number: 88316 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZW04-5V8 thru BZW04-376 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PART NUMBER BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI-DIRECTIONAL BI-DIRECTIONAL MIN. MAX. BZW04-5V8 BZW04-6V4 BZW04-7V0 BZW04-7V8 BZW04-8V5 BZW04-9V4 BZW04-10 BZW04-11 BZW04-13 BZW04-14 BZW04-15 BZW04-17 BZW04-19 BZW04-20 BZW04-23 BZW04-26 BZW04-28 BZW04-31 BZW04-33 BZW04-37 BZW04-40 BZW04-44 BZW04-48 BZW04-53 BZW04-58 BZW04-64 BZW04-70 BZW04-78 BZW04-85 BZW04-94 BZW04-102 BZW04-110 BZW04-128 BZW04-136 BZW04-145 BZW04-154 BZW04-171 BZW04-188 BZW04-213 BZW04-239 BZW04-256 BZW04-273 BZW04-299 BZW04-342 BZW04-376 BZW04-5V8B BZW04-6V4B BZW04-7V0B BZW04-7V8B BZW04-8V5B BZW04-9V4B BZW04-10B BZW04-11B BZW04-13B BZW04-14B BZW04-15B BZW04-17B BZW04-19B BZW04-20B BZW04-23B BZW04-26B BZW04-28B BZW04-31B BZW04-33B BZW04-37B BZW04-40B BZW04-44B BZW04-48B BZW04-53B BZW04-58B BZW04-64B BZW04-70B BZW04-78B BZW04-85B BZW04-94B BZW04-102B BZW04-110B BZW04-128B BZW04-136B BZW04-145B BZW04-154B BZW04-171B BZW04-188B BZW04-213B BZW04-239B BZW04-256B BZW04-273B BZW04-299B BZW04-342B BZW04-376B 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 161 171 190 209 237 266 285 304 332 380 418 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 294 315 336 368 420 462 STANDTEST OFF CURRENT VOLTAGE IT (mA) VWM (V) 10.0 10.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 7.02 7.78 8.55 9.4 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 78.0 85.5 94.0 102 111 128 136 145 154 171 188 213 239 256 273 299 342 376 MAXIMUM MAXIMUM MAXIMUM REVERSE PEAK CLAMPING LEAKAGE PULSE VOLTAGE AT VWM CURRENT AT IPPM IPPM (2) (A) ID (4) ( A) VC (V) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 38.0 35.4 33.0 30.0 27.6 25.7 24.0 22.0 19.0 17.8 16.0 14.5 13.0 12.0 10.7 9.6 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 1.7 1.6 1.5 1.4 1.2 1.1 1.0 0.90 0.80 0.75 0.67 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.5 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 301 344 384 414 438 482 548 603 MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) 0.057 0.061 0.065 0.073 0.075 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.105 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) For bi-directional types having V WM of 10 V and less, the ID limit is doubled Revision: 08-May-12 Document Number: 88316 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZW04-5V8 thru BZW04-376 www.vishay.com Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N BZW0410-E3/54 BZW0410HE3/54 (1) UNIT WEIGHT (g) 0.350 0.350 PREFERRED PACKAGE CODE 54 54 BASE QUANTITY 550 550 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel Note (1) AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 1000 Measured at Zero Bias 100 Measured at Stand-Off Voltage VWM 10 0.1 0.1 1 10 100 1000 10 000 1 10 100 1000 td - Pulse Width (s) VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 100 100 PD - Power Dissipation (%) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 75 50 25 60 Hz Resistive or Inductive Load 75 50 L = 0.375" (9.5 mm) Lead Lengths 25 0 0 0 25 50 75 100 125 150 175 0 200 25 50 75 100 125 150 175 TJ - Initial Temperature (C) TL - Lead Temperature (C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Power Derating Curve tr = 10 s 100 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 200 10/1000 s Waveform as defined by R.E.A. td 0 10 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 08-May-12 4.0 1 10 100 Number of Cycles at 60 Hz Fig. 6 - Max. Non-Repetitive Forward Surge Current Uni-Directional Only Document Number: 88316 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZW04-5V8 thru BZW04-376 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Revision: 08-May-12 Document Number: 88316 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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