Rugged Power MOSFETs IRFD9110, IRFD9113 File Number 2215 Avalanche-Energy-Rated P-Channel Power MOSFETs -0.6A and -0.7A, -60V and -100V TERMINAL DIAGRAM Ips (On) = 1.2Q, and 1.60 Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited = Nanosecond switching speeds eC a Linear transfer characteristics 2 High input impedance s 92CS-463262 P-CHANNEL ENHANCEMENT MODE The [RFO9110 and IRF09113 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified tevel of energy in the breakdown avalanche mode of opera- TERMINAL DESIGNATION tion. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, i s relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. 5 [ These types can be operated directly from integrated G circuits. The IRFD-types are supplied in the 4-Pin dual-in-line plastic TOP VIEW package. 4-PIN DIP Absolute Maximum Ratings Parameter IRFD9110 IRFD9113 Units Vos Orain Source Voltage -100 -60 v VoGr Drain Gate Voltage (Rgg = 20 k2)O) -100 -60 Vv 'p @TA = 25C Continuous Drain Current -0.7 -0.6 A low Pulsed Drain Current -3.0 -2.5 A Vos Gate Source Voltage +20 v l Pp @ Ta = 25C Max. Power Dissipation 1.0 (See Fig. 13) Ww Linear Derating Factor 0,01 (See Fig. 13) wc Eas. Single Pulse Avalanche Energy 190 mJ Ty Operating Junction and -65 to 150 C Tstg Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-396Rugged Power MOSFETs IRFD9110, IRFD9113 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. Units Test Conditions BVpss_ Drain Source Breakdown Voltage [IRFD9110] -100 = ~ Vv Ves = OV IRFD9113) -60 = - v Ip = -250nA VGsith) Gate Threshold Voltage ALL -2.0 _ ~4.0 v Vos = Ves. 'p = -250pA Igsg __ Gate Source Leakage Forward ALL - = -500 nA Vgs = -20V less Gate Source Leakage Reverse ALL _ - 500 nA Ves = 20V pa loss Zero Gate Voltage Drain Current ALL - - -250 pA Vos = Max. Rating, Vgg = OV - |-1000 A Vos = Max. Rating x 0.8, Vgg = OV, To = 125C IDion) On-State Drain Current @ IRFD9110} -0.7 - = A inro9173] -o6 | ~ A YDS ? !Dion) * RDSion} max., VGs = ~10V RpSion) Static Drain Source On-State IRFO9110 = 1.0 1.2 2 Resistance @ inFb9iial 12 16 2 Vas = ~10V, Ip = -0.3A 9s Forward Transconductance @ ALL 0.59 | 0.68 S(t} Vos 50V, Ip = -0.6A Cigg Input Capacitance ALL = 180 _ pF Vag = OV. Vpg = -25V, f = 1.0 MHz Coss _ Output Capacitance ALL = 85 = pF See Fig. 9 Crs Reverse Transfer Capacitance ALL = 30 _ pF taion) _ Turn-On Delay Time ALL = 15 30 ns Vop = 0.5 Ip = -0.3A, Zp = 502 t Rise Time ALL _ 30 60 ns See Fig. 16 tdioff} Turn-Off Delay Time ALL _ 20 40 ns {MOSFET switching times are essentially tf Fail Time ALL _ 20 40 ns independent of operating temperature.) Qg Total Gate Charge ; ALL _ 1 18 nc Ves = -15V. Ip aol 5A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 17 for test circuit. (Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL ~ 5.7 7.8 nc Ogg Gate-Drain (Miller) Charge ALL - 5.3 7.2 nc lo Internal Drain Inductance ALL - 4.0 _ nH Measured from the Modified MOSFET drain Sead, 2.0mm symbol showing the {0.08 in.) from header internal device to center of die. inductances. 0 bo ts Internat Source Inductance ALL - 6.0 > nH Measured from the - source lead, 2.0mm 6 Ha {0.08 in.) from header Ls to source bonding pad. s Thermal Resistance [ RG. Junction-to-Ambient | ALL - | - ] 120 L C/W | Typical socket mount | Source-Drain Diode Ratings and Characteristics 2 Ig Continuous Source Current !RFD9110 = = -0.7 A Modified MOSFET symbol (Body Diode} IRFD9113 _ _ 0.6 A showing the integral - reverse P-N junction rectifier. Ism Pulse Source Current (Body Diode} IRFD9110 = = -3.0 A G IRFO9113 _ _ -2.5 A Vso Diode Forward Voltage @ IRFD9110 _ = 1.5 Vv Tc = 25C, lg = -0.7A, Vgg = OV 8 HRFD9113 - _ -1.5 Vv Tc = 25C, Ig = -0.6A, Veg = OV ter Reverse Recovery Time ALL - 120 _ as Ty = 150C, Ip = -O.7A, dipidt = 100A/ys Orr Reverse Recovered Charge ALL - 6.0 = uc Ty = 150C, Ip = -0.7A, dig/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by tg + Lp. @ Ty = 25C to 150C. @ Pulse Test: Pulse width = 300ys, Duty Cycle < 2%. @ Vop = 25V, starting Ty = 25C, L = 582 mH, Re = 252, Peak i. = 0.7A. (See Fig. 14 and 15) 6-397Rugged Power MOSFETs IRFD9110, IRFD9113 80 ps PULSE a0 us Vos > !pjon * RDS(on) MAX. Ty=-55C Ty = 25C Ty = 128C a a 8 w a o 2 = = < < bk - z r4 we Ww (4 c c ec J > Q oO z z < e a a a s 10 -8 -10 Vos. DRAIN TO SOURCE VOLTAGE (VOLTS) Vas. GATE-TO-SOURCE VOLTAGE (VOLTS) 92CS-43263 92CS-43264 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics \ ry I e AREA -0.1 LIMITED t a To = 25C Ty = 150C 6 79-02) Rac = 1 !p, DRAIN CURRENT (AMPERES) -2 -4 -6 -8 =10 =) - Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS} 92CS-43265 92CS-43282 Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area I Ty = 125 9fs. TRANSCONDUCTANCE (SIEMENS) 2 Ipp. REVERSE DRAIN CURRENT (AMPERES) -1.2 2.4 3.6 ~4.8 -6.0 0.4 -0.6 -O0.8 -1.0 1.2 -1.4 -1.6 -1.8 p, ORAIN CURRENT (AMPERES) Vso: SOURCE-TO-DRAIN VOLTAGE (VOLTS) 92CS-43268 92CS-43269 Fig. 5 - Typical Transconductance Vs. Drain Current Fig. 6 - Typical Source-Drain Diode Forward Voltage 6-398Rugged Power MOSFETs IRFD9110, IRFD9113 = a x o ~ a oO 2 o a (NORMALIZED) a w N a < = = z w g 5 > Veg = -10V =-O.3A 2 a a a z = 8 < my o aw 9 c > 3 g z z a a a a > D w 9 2 < Ee 2 n w z 6 w Q ec > 9 @ e z < 4 a e 2 a oa 40 0 40 80 120 160 ~40 oO ao 60 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) 92CS-43271 9208-43283 Fig. 7 - Breakdown Voltage Vs. Temperature Fig. 8 - Normalized On-Resistance Vs. Temperature Ip = 1.58 FOR TEST CIRCUIT SEE FIGURE 17 T MHz Cys + Cos Cag SHORTED Coa | Coss = Cas + 8 a Cag + C, CAPACITANCE (pF) 100 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) oO 7-10 ~20 ~30 . -40 50 2 4 6 8 10 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) 9205-43273 9205-43284 Fig. 9 - Typical Capacitance Vs. Drain-to-Source Voltage Fig. 10 - Typical Gate Charge Vs. Gate-to-Source Voltage 5.0 t--Rosjon): MEASURED WITH CURRENT PULSE OF 2.0 pS DURATION. INITIAL Ty = 25 C. (HEATING ~ w 4.0} EFFECT OF 2.0 pS PULSE IS a 2g = az a = 3S = Z 9% 20 Veg = -10V, ge | od gz Vos = -20V. x 60 \ = 1.0 . oO 2.0 1.0 1.0 -2.0 -3.0 25 50 75 100 125 150 tp, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) 9208-43285 92CS-43286 Fig. 11 - Typical On-Resistance Vs. Drain Current Fig. 12 - Maximum Drain Current Vs. Case Temperature 6-399Rugged Power MOSFETs IRFD9110, IRFD9113 3 z 2 E a a wo 3 c w = 2 a a Ves = 6-400 Oo 20 40 660 80 100 120 140 160 180 200 Ta, AMBIENT TEMPERATURE (C) 9208-43267 Fig. 13 - Power Vs. Temperature Derating Curve Rg > -10V 92CS-43280 Fig. 16 - Switching Time Test Circuit Lov Ves =-10V VARY tp TO OBTAIN REQUIRED PEAK I 92CS-43278 Fig. 14- Unclamped Inductive Test Circuit o----------- poaccocececeen , , \ t N \ / \ / \ N re SU Yoo N tp \ 8Voss 92CS-43279 Fig. 15 - Unclamped Inductive Waveforms CURRENT -VYos O ISOLATED SUPPLY | SAME TYPE 12V oT ogo ur AS DUT BATTERY | " 1 DUT o---- | J-1s.ma O+Vos ey = Ip CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR 92CS-43281 Fig. 17 - Gate Charge Test Circuit