PD - 95222 IRLL110PbF HEXFET(R) Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching Lead-Free D VDSS = 100V RDS(on) = 0.54 G ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings ID @ Tc = 25C ID @ Tc = 100C IDM PD @Tc = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Parameter Max. Continuous Drain Current, VGS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds 1.5 0.93 12 3.1 2..0 0.025 0.017 -/+10 50 1.5 0.31 5.5 -55 to + 150 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case) Thermal Resistance Parameter RJC RJA Junction-to-PCB Junction-to-Ambient. (PCB Mount)** Typ. Max. --- --- 40 60 Units C/W ** When mounted on 1'' square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 04/27/04 IRLL110PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. Typ. Max. Units Conditions 100 --- --- V VGS = 0V, ID = 250A --- 0.12 --- V/C Reference to 25C, I D = 1mA --- --- 0.54 VGS = 5.0V, ID = 0.90A --- --- 0.76 VGS = 4.0V, ID = 0.75A 1.0 --- 2.0 V VDS = VGS, ID = 250A 0.57 --- --- S VDS = 25V, ID = 0.90 A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 125C --- --- 100 VGS = 10V nA --- --- -100 VGS = -10V --- --- 6.1 ID = 5.6A --- --- 2.6 nC VDS = 80V --- --- 3.3 VGS = 5.0V, See Fig. 6 and 13 --- 9.3 --- VDD = 50V --- 47 --- ID = 5.6A ns --- 16 --- RG = 12 --- 18 --- RD = 8.4 , RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.0 --- LS Internal Source Inductance --- 6.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 250 80 15 --- --- --- V(BR)DSS IGSS nH Between lead, 6mm(0.25in) from package and center of die contact. D G S pF VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol --- --- 1.5 showing the A integral reverse --- --- 12 p-n junction diode. --- --- 2.5 V TJ = 25C, IS = 1.5A, VGS = 0V --- 110 130 ns TJ = 25C, IF = 5.6A --- 0.50 0.65 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD=25V, starting TJ = 25C, L = 25 mH RG = 25, IAS = 1.5A. (See Figure 12) 2 ISD 5.6A, di/dt 75A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. www.irf.com IRLL110PbF www.irf.com 3 IRLL110PbF 4 www.irf.com IRLL110PbF www.irf.com 5 IRLL110PbF 6 www.irf.com IRLL110PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HE XF ET PRODUCT MARKING T HIS IS AN IRF L014 INT E RNAT IONAL RE CT IF IER LOGO PART NUMB E R FL 014 314P T OP www.irf.com LOT CODE AXXXX A = AS S E MB L Y S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WE E K P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL ) B OT T OM 7 IRLL110PbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) TR 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 ) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 ) 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 ) 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 330.00 (13.000) M AX. NO TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 5 0.00 (1 .9 6 9 ) M IN . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.72 4 ) M AX . 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www.irf.com