IRLL110PbF
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.54 VGS = 5.0V, ID = 0.90A
––– ––– 0.76 ΩVGS = 4.0V, ID = 0.75A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.57 ––– ––– S VDS = 25V, ID = 0.90 A
––– ––– 25 µA VDS = 100V , VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
QgTotal Gate Charge ––– ––– 6.1 ID = 5.6A
Qgs Gate-to-Source Charge ––– ––– 2.6 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– – –– 3.3 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 50V
trRise Time ––– 47 ––– ns ID = 5.6A
td(off) Turn-Off Delay Time ––– 16 ––– RG = 12 Ω
tf Fall Time ––– 18 ––– RD = 8.4 Ω,
nH
Ciss Input Capacitance ––– 250 ––– VGS = 0V
Coss Output Capacitance ––– 80 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance –– – 1 5 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD=25V, starting TJ = 25°C, L = 25 mH
RG = 25Ω, I AS = 1.5A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 1.5A, VGS = 0V
trr Reverse Recovery Time –– – 11 0 13 0 ns TJ = 25°C, IF = 5.6A
Qrr Reverse RecoveryCharge ––– 0.50 0.65 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
––– ––– 12
1.5 A
S
D
G
Between lead, 6mm(0.25in)
from package and center
of die contact.
LSInternal Source Inductance
Internal Drain Inductance
LD––– 4.0 –––
––– 6.0 –––
Source-Drain Ratings and Characteristics