FIELD-EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFET DE CHAMP, SILICIUM, CANAL N **FESM 4091 "ESM 4092 *FESM 4093 - Fast switching Commutation rapide - Chopper Dcoupeur Maximum ower dissipation Dissipation de puissance maximale P tot {mw} 300 XI 200 N x 100 50 100 150 Tsase'C 2k Preferred device Dispositif recammand 30mA min. ESM 4091 Ipgg 15mA min. ESM 4092 8mA_ min. ESM 4093 30 2 max. ESM 4091 'p 502 max. ESM 4092 Son 1800 = max. ESM 4093 Plastic case F 139 B See outline drawing CB-76 on last pages Boftier plastique Voir dessin cot CB-76 dernires pages Bottom view Vue de dessous ( s Weight : 0,3 9. Masse ABSOLUTE RATINGS (LIMITING VALUES) Tamb = +25 C (Untess otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION am (Sauf indications contraires} Drain-source voltage Tension drain-source Vv DOS 30 Vv Gate-drain voltage Tension gritle-drain Vg D 30 v Gate current Courant de grilfe Ig 10 mA Power dissipation tT = 25C Pp Dissipetion de puissance case tot 300 mW Junction temperature . Temprature de jonction max Tj 150 c Storage temperature min T 55 Temprature de stockage max stg +150 C 75-48 1/7 877ESM 4091, ESM 4092, ESM 4093 STATIC CHARACTERISTICS T. =25C ({Uniess otherwise stated) CARACTERISTIQUES STATIQUES amb ~ (Sauf indications contraires} Test conditions : Conditions de mesure Min. Typ. Max. Voce = 0 DS - A Vgg = -20V 1 n Total gate leakage current I Courant de fuite total de grille Vos =0 GSS Ves = -20V -1 BA Tamb = 100C Gate-source breakdown voltage Vos =9 Tension de claquage grille-source le =-1yA ViBR)GSS 30 Vv Vic = 20V DS ESM 4091 1 nA Veg =-12V Drain cut-off current Vog = 20V Courant rsiduel de drain Ves =-8V 'psx ESM 4092 1 nA Vos = 20V ESM 4093 1 nA Ves =-6V ESM 4091) 30 mA Drain current Vos = 20V * Courant de drain Vv Gs = 0 loss een toes e ms m G ff vol Vine =20V ESM 4091/-5 -10 Vv ate-source cut-off voltage ps > _ _ Tension grille-source de blocage Ip =5nA VGsoft mem 008 ; : V Vag =0 Gs ESM 4091 0,2 v Ip =6&6mA Drain-source saturation voltage Ves =0 Vv Tension de saturation drain-source ID =4mA DSsat ESM 4092 0,2 v Veg =0 GS Ip =2,5mA ESM 4093 0,2 Vv 0 Veo =0 ESM 4091 30 2 n-state drain-source resistance GS ~ r Rsistance drain-source a l'tat passant Ip =1mA DSon com foes 0 o * Pulsed tp <300 uw & 2% impulsions 217 878ESM 4091, ESM 4092, ESM 4093 DYNAMIC CHARACTERISTICS (for small signals) T = 25C (Unless otherwise stated} CARACTERISTIQUES DYNAMIQUES (pour petits signaux} amb (Sauf indications contraires) Test conditions . Conditions de mesure Min. Typ. Max. On-state drai ist Ves = ESM 4091 30 Q -state drain-source resistance Rsistance drain-source & l'tat passant Ip =0 "dson ESM 4092 50 Q f = 1 kHz ESM 4093 80 a Vane = i Gs Input capacitance _ Capacit dentre Vos =9 Criss 28 pF f =1MHz a ' Veg = -20V averse transfer capacitance = Capacit de transfert inverse Vos =0 C1255 5 pF f = 1 MHz Turn-on time Temps total de croissance Yoo = 3Vv ton ESM 4091 25 as Vv =0 GS ___| Vggx = -12V 2 on = 6,6mA Turn-off time ee test circuit Temps total de dcroissance Voir schma tose ESM 4091 40 ns Turn-on time _ t Temps total de croissance Yop = 3 on ESM 4092 35 ns. Ves = 9 | Vesx = -8V e on = 4mA Turn- i ee test circuit Tome oral de dcroissence Voir schma tort ESM 4092 60 ns Turn-on time Temps total de croissance Vop = 3V Ton ESM 4093 60 ns Ves = 9 __] Vegx = -8V 2 on = 2,5mA Turn-off time ee test circuit Temps total de dcraissance Voir schma toft ESM 4093 80 ns 3/7 879ESM 4091, ESM 4092, ESM 4093 SWITCHING TIMES TESTS CIRCUITS SCHEMAS DE MESURES DES TEMPS DE COMMUTATION Generator R2 Zp = 502 ge = 10% 1 pF Gnrateur v4 , i I 1 t <&1ns te SI1ns 1 (} f | 502 502 t, = tus ko, SN\ 2, = 502 t, <0,4 ns Oscilloscope Oscilloscope C, < 1,7 pF R, = Rg t+ 502 50 Ne + RL Re Vop] Sent HF T ] 430 379 | 4 680 629 1120 1069 Nr tp vib WO 90 % 12 V (ESM 4091) Vesx =| 8 V (ESM 4092) 50 % 6 V (ESM 4093) Vv 10 % V1 = GSX et 41 t t v2 4 ott ton d(off} t tdion) ot ~ Yoo 10% 6,6 mA (ESM 4091) \p {4 mA(ESM 4092) 2,5 mA (ESM 4093) Vv _ DS sat Ip x 252 90% Vv -Vv For information Ip = DD 7 TOS sat A titre indicatif Re 4/7 880ESM 4091, ESM 4092, ESM 4093 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES 'b t D (mA) | esm 4091 (mA) | ESM 4092 tp = 300 5 2% tp = 300 us 6 2% 75 tT, 60 Vas =0 50 40 [ -1V VA 25 20 -2V =3V 0 0 -4Vv 0 5 10 15 Vpgtv) 0 5 10 15 Vg(v) o ima) [ESM 4093 Ves =0V to < 300 us 5 6 & 2% ~O,5V 10 5 -1V44 -1,5 Vv 0, 0 5 10 15 Vps') 5/7 881ESM 4091, ESM 4092, ESM 4093 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES (mA} 10' 10 0 41 2 3 4 5 6 7 = ~Vgglv) pss {mA) 80 60 20 20 60 100 1, mp(2C) 6/7 882ESM 4091, ESM 4092, ESM 4093 DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES "ds on (a) 12ss (pF) 2.3 4 6 6 7 8 VgglV) | Ves =7-12V t =1MHz4 Tomb = 25C ~~ Max PN NN Min. 5 10 15 20 Vps!) r a a v =0 vero | OK 80 f =1tkHz Lf c 70 7 s ZL ESM 4093 so} 14 A 40 ESM ae LS SA J ea Lo" ea |_fesm 4091 20 10 -80 -28 0 25 50 75 1007, (c) Cr Iss & (p se 10! 0 5 10 15 VgslV) WT 883