CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
Trr ns
Cj pF
T
JO
C
T
STG O
C
Document Number: DS_D1405069 Version: I14
ES3A thru ES3J
Taiwan Semiconductor
Surface Mount Su
er Fast Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ES
3C
ES
3D
MECHANICAL DATA
Case: DO-214AB (SMC) DO-214AB (SMC)
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
ES
3F
ES
3G
ES
3J Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
PARAMETER SYMBOL ES
3A
ES
3B
Maximum DC blocking voltage
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
100 A
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A V
F
V
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=100 ℃I
R
10 μA
500
- 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Maximum reverse recovery time (Note 2) 35
Typical junction capacitance (Note 3)
Typical thermal resistance R
θJL
R
θJA
12
47
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
ES
3H
0.95 1.3 1.7
45 30
O
C/W
Operating junction temperature range