Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W FEATURES * High current (max. 500 mA) Low voltage (max. 45 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC807W and BC808W. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector HH MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE NUMBER CODE 1 2 BC817W 6D: BCc81sw 6Ht Top view Manane2 BC817-16W 6At BC818-16W 6Et BC817-25W SBI BC818-25W 6Ft Fig.1 Simplified outline (GOT323) and symbol. BC817-40W 6Ct BC818-40W 6Gt QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBo collector-base voltage open emitter BC817W - 50 Vv BC818Vvi ~ 30 Vv Veceo collector-emitter voltage open base BC817W - 45 Vv BC8s1i8W ~ 25 Vv lom peak collector current ~ 1 A Prot total power dissipation Tamb < 25 C _ 200 mW Ree DC current gain Io = 100 MA; Veg = 1V 100 600 Io = 500 mA: Voge = 1V 40 - fr transition frequency Ic = 10 MA; Voce = 5 V; f = 100 MHz 100 _ MHz 1997 Mar 05 303Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veso collector-base voltage open emitter BC817W - 50 Vv BC818W - 30 Vv Vceo collector-emitter voltage open base; Ic = 10 mA BC817W - 45 Vv BC818W - 25 Vv VeEBO emitter-base voltage open collector - 5 v Ic coliector current (DC) - 500 mA {om peak collector current - 1 A au peak base current - 200 mA Prot total power dissipation Tamp < 25 C; note 1 _ 200 mw T 52g storage temperature -65 +150 C T, junction temperature - 150 <C Tamb operating ambient temperature 65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Ph j-a thermal resistance from junction to ambient note 1 625 KAW Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Mar 05 304Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W CHARACTERISTICS Tamp = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IcBo collector cut-off current le = 0; Veg = 20 V - 100 nA le = 0; Vog = 20 V; T; = 150C - 5 uA lego emitter cut-off current Ic = 0: Vep=5V ~ 100 nA Nee DC currerit gain lo = 100 MA; Vee = 1 V; note 1; BC817W: BC818W see Figs 2, 3 and 4 100 600 BC817-16W; BC818-16W 100 250 BC817-25W; BC818-25W 160 400 BC817-40W; BC818-40W 250 600 Nee DC current gain ic = 500 mA; Vog = 1 V; note 1 40 ~ Veesar collector-emitter saturation voltage | ic = 500 mA; Ip = 50 mA; note 1 - 700 mv VBE base-emitter voltage Io = 500 mA; Voce = 1 Vi note 1 - 1.2 mv Cc. collector capacitance le = ig = 0; Vog = 10 Vi f= 1 MHz - 5 pF fr transition frequency Io = 10 MA: Vee = 5 Vi f= 100 MHz | 100 - MHz Note 1. Pulse test: tp < 300 us; < 0.02. SCS A ih 160 | -} -~ pdf ft pp err + iJ i Lt itl Vop=1 to | te a 120 ot - ro | _ fot | reer TI Nh 90 pb | tif. bd | [Jo =e SU TNT | a PING So TT HN 0 Ll. ud at Lt BC817-16W; BC818-16W. Fig.2 DC current gain; typical values. 1997 Mar 05 305Product specification Philips Semiconductors BC817W; BC818W NPN general purpose transistors MBH?2: pobre rT : | oe | [ fhe dane SES Sepa Po Pee Pope bet ppt pe ; Pet ta ted LL 3 3 8 8 8 Fig.3 DC current gain; typical vatues. BC817-25W; BC818-25W | 1 Ig {ma} peepee ftp pe te epee 2 es ad pape FS E- ft. a et TP ee i ETT po ao [ = po Tc : Usp sp fp 4 4 i +. _}+-+-- - Te Th I tr soot EE a tt ' | ; || | | | | | Ld | i we Zz ao S ge 8 gg 8 BC817-40W; BC818-40W. Fig.4 DC current gain; typical values. 306 1997 Mar 05