A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVCBO IC = 10 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
ICES VCE = 30 V 10 mA
hFE VCE = 5.0 V IC = 500 mA 5.0 200 ---
NPN SILICON RF POWER TRANSISTOR
VHB40-28F
DESCRIPTION:
The ASI VHB40-28F is an epitaxial
planar transist or, designed f or 28 V
FM Class C RF amplifiers utilized in
base stations. This device utilizes
ballasted emitt er r esistors to achieve
optimum load m ism at ch capability.
FEATURES:
• 175 MHz 28 V Class C
• Efficiency 60% min
• POUT = 40 W @ 7.6 dB
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
VCBO 65 V
VCE0 35 V
VEBO 4.0 V
PDISS 60 W
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.9 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10726
MINIMUM
inches / mm
.970 / 24.6 4
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.8 9
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.9 4
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.2 9 .730 / 18.5 4
C
B
E
E
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
VHB40-28F
Cob VCB = 30 V f = 1.0 MHz 65 pF
PG
η
ηη
ηC
VCE = 28 V PIN = 7.0 W f = 175 MHz
POUT = 40 W 7.6
60 dB
%
IMPEDANCE DATA
VCE = 28 V
f = 175 MHz
PIN (W) POUT = (W) ZIN (Ω) ZCL = (Ω)
2 28.5 0.85 + j1.20 3.25 + j7.05
4 43.0 1.05 + j1.32 4.45 + j5.40
6 53.0 1.01 + j1.42 5.25 + j4.42
8 60.5 1.05 + j1.35 5.45 + j4.12
