© Semiconductor Components Industries, LLC, 2014
September, 2018 − Rev. 15 1Publication Order Number:
ESD5Z2.5T1/D
ESD5Z2.5T1G Series,
SZESD5Z2.5T1G Series
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD5Z Series is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time, make these
parts ideal for ESD protection on designs where board space is at a
premium. Because of its small size, it is suited for use in cellular
phones, portable devices, digital cameras, power supplies and many
other portable applications.
Specification Features:
•Low Clamping Voltage
•Small Body Outline Dimensions:
0.047″ x 0.032″ (1.20 mm x 0.80 mm)
•Low Body Height: 0.028″ (0.7 mm)
•Stand−off Voltage: 2.5 V − 1 2 V
•Peak Power up to 240 Watts @ 8 x 20 ms Pulse
•Low Leakage
•Response Time is Typically < 1 ns
•ESD Rating of Class 3 (> 16 kV) per Human Body Model
•IEC61000−4−2 Level 4 ESD Protection
•IEC61000−4−4 Level 4 EFT Protection
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
SOD−523
CASE 502
STYLE 1
1
Cathode 2
Anode
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 3 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
XX
12
M
G
G
(Note: Microdot may be in either location)
SZ/ESD5ZxxxT1G SOD−523
Pb−Free 3000 /
Tape & Reel
*Date Code orientation may vary
depending upon manufacturing location.
SZ/ESD5ZxxxT5G SOD−523
Pb−Free 8000 /
Tape & Reel
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD)
Contact
Air ±30
±30
kV
IEC 61000−4−4 (EFT) 40 A
ESD Voltage
Per Human Body Model
Per Machine Model 16
400
kV
V
Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C°PD°500 mW
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
Uni−Directional
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device* Device
Marking
VRWM
(V) IR (mA)
@ VRWM
VBR (V)
@ IT
(Note 2) IT
VC (V)
@ IPP =
5.0 A†VC (V) @
Max IPP†IPP
(A)†Ppk
(W)†C
(pF) VC
Max Max Min mA Typ Max Max Max Typ
Per
IEC61000−4−2
(Note 3)
ESD5Z2.5T1G/T5G ZD 2.5 6.0 4.0 1.0 6.5 10.9 11.0 120 145 Figures 1 and 2
See Below
(Note 4)
ESD5Z3.3T1G/T5G ZE 3.3 0.05 5.0 1.0 8.4 14.1 11.2 158 105
ESD5Z5.0T1G/T5G ZF 5.0 0.05 6.2 1.0 11.6 18.6 9.4 174 80
ESD5Z6.0T1G/T5G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70
ESD5Z7.0T1G/T5G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65
ESD5Z12T1G/T5G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes SZ-prefix devices where applicable.
†Surge current waveform per Figure 5.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2 Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
www.onsemi.com
4
IEC 61000−4−2 Spec.
Level Test Volt-
age (kV)
First Peak
Current
(A) Current at
30 ns (A) Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 W aveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
50 W
50 W
Cable
Oscilloscope
ESD Gun
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 5. 8 X 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
www.onsemi.com
5
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
E
D−X−
−Y−
b2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D1.10 1.20 1.30
E0.70 0.80 0.90
A0.50 0.60 0.70
b0.25 0.30 0.35
c0.07 0.14 0.20
L0.30 REF
H1.50 1.60 1.70
12
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48 0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
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ESD5Z2.5T1/D
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