4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 * Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR 1 2 3 A (+) C (-) NC V D E 18537_4 17201_4 * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. (repetitive) * Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak DESCRIPTION voltage voltage (transient overvoltage) * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS VDE STANDARDS * Switch-mode power supplies These couplers perform safety functions according to the following equipment standards: * Line receiver DIN EN 60747-5-5 (VDE 0884) Optocoupler for electrical safety requirements * Microprocessor system interface IEC 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus * Computer peripheral interface * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5 AGENCY APPROVALS * UL1577, file no. E52744, double protection * BSI: BS EN 41003, BS EN 60065 (BS 415), pending * DIN EN 60747-5-5 (VDE 0884) * FIMKO (SETI): EN 60950, certificate no. FI25155 ORDER INFORMATION (1) PART REMARKS 4N25GV CTR > 20 % wide lead spacing, DIP-6 4N35GV CTR > 100 % wide lead spacing, DIP-6 4N25V CTR > 20 %, DIP-6 4N35V CTR > 100 %, DIP-6 Note (1) G = leadform 10.16 mm; G is not marked on the body. Document Number: 83530 Rev. 2.0, 26-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 139 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA Forward surge current tp 10 s IFSM 3 A Pdiss 70 mW Tj 125 C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current IC 50 ICM 100 mA Pdiss 70 mW Tj 125 C Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 200 mW Ambient temperature range Tamb - 55 to + 100 C Storage temperature range Tstg - 55 to + 125 C Tsld 260 C Collector peak current tp/T = 0.5, tp 10 ms Power dissipation Junction temperature COUPLER Soldering temperature (2) 2 mm from case, t 10 s Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS PARAMETER (1) TEST CONDITION SYMBOL MIN. TYP. MAX. 1.4 UNIT INPUT Forward voltage IF = 50 mA VF 1.2 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 A VECO 7 V VCE = 10 V, IF = 0, Tamb = 100 C ICEO 50 nA VCE = 30 V, IF = 0, Tamb = 100 C ICEO 500 nA Collector emitter saturation voltage IF = 50 mA, IC = 2 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 kHz f = 1 MHz Ck 1 pF Junction capacitance V pF OUTPUT Collector emitter leakage current COUPLER Coupling capacitance Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) www.vishay.com 140 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83530 Rev. 2.0, 26-Oct-09 4N25V, 4N25GV, 4N35V, 4N35GV Optocoupler, Phototransistor Output Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 10 V, IF = 10 mA IC/IF VCE = 10 V, IF = 10 mA, Tamb = 100 C MAXIMUM SAFETY RATINGS PARAMETER PART SYMBOL 4N25V CTR 4N25GV CTR 4N35V CTR 4N35GV CTR 4N35V CTR 4N35GV CTR MIN. TYP. MAX. UNIT 20 100 % 100 150 % 40 % (1) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note (1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1600 V Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6000 V Vpd 1400 V VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011 VIO = 500 V, Tamb = 150 C (construction test only) RIO 109 Ptot - Total Power Dissipation (mW) Insulation resistance TYP. MAX. UNIT VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 94 9182 25 50 75 100 125 Tsi - Safety Temperature (C) Fig. 1 - Derating Diagram Document Number: 83530 Rev. 2.0, 26-Oct-09 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-; IEC 60747 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 141 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output SWITCHING CHARACTERISTICS PARAMETER Delay time (see figure 3) Rise time (see figure 3) Fall time (see figure 3) Storage time (see figure 3) Turn-on time (see figure 3) Turn-off time (see figure 3) Turn-on time (see figure 4) IF PART SYMBOL VS = 5 V, IC = 5 mA, RL = 100 , 4N25V 4N25GV td 4 s VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV td 2.5 s VS = 5 V, IC = 5 mA, RL = 100 , 4N25V 4N25GV tr 7 s VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV tr 3 s VS = 5 V, IC = 5 mA, RL = 100 , 4N25V 4N25GV tf 6.7 s VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV tf 4.2 s VS = 5 V, IC = 5mA, RL = 100 , 4N25V 4N25GV ts 0.3 s VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV ts 0.3 s VS = 5 V, IC = 5 mA, RL = 100 , 4N25V 4N25GV ton 11 s VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV ton VS = 5 V, IC = 5 mA, RL = 100 , 4N25V 4N25GV toff VS = 5 V, IC = 2 mA, RL = 100 , 4N35V 4N35GV toff 4N25V 4N25GV ton 25 s 4N35V 4N35GV ton 9 s 4N25V 4N25GV toff 42.5 s 4N35V 4N35GV toff 25 s VS = 5 V, IF = 10 mA, RL = 1 k, Turn-off time (see figure 4) 0 TEST CONDITION VS = 5 V, IF = 10 mA, RL = 1 k, +5V IF IC = 5 mA / 2 mA adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 s 50 100 TYP. Oscilloscope RL 1 M CL 20 pF 14950 MAX. UNIT 10 s 7 s 10 IF IF = 10 mA s +5V IC RG = 50 tp = 0.01 T tp = 50 s Channel I Channel II 0 MIN. Channel I Channel II 50 1k Oscilloscope RL 1 M CL 20 pF 95 10844 Fig. 3 - Test circuit, Non-Saturated Operation www.vishay.com 142 Fig. 4 - Test Circuit, Saturated Operation For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83530 Rev. 2.0, 26-Oct-09 4N25V, 4N25GV, 4N35V, 4N35GV Optocoupler, Phototransistor Output Vishay Semiconductors IF 0 tp IC t 100 % 90 % 10 % 0 tr td tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts t on ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times TYPICAL CHARACTERISTICS 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 40 80 120 Tamb - Ambient Temperature (C) 96 11700 CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) Tamb = 25 C, unless otherwise specified 100 10 1 0.1 96 11862 0.8 1.2 1.6 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (C) 10 000 VCE = 10 V IF = 0 A 1000 100 10 2.0 VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage Document Number: 83530 Rev. 2.0, 26-Oct-09 1.3 Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature ICEO - Collector Dark Current (nA) IF - Forward Current (mA) 1000 0.4 VCE = 10 V IF = 10 mA 1.4 96 11874 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 0 1.5 1 0 96 11875 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 9 - Collector Dark Current vs. Ambient Temperature For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 143 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output ICB - Collector Base Current (mA) 1.000 1.0 VCEsat - Collector Emitter Saturation Voltage (V) VCB = 10 V 0.100 0.010 0.8 20 % used 0.6 CTR = 50 % used 0.4 0.2 10 % used 0.001 0 1 96 11876 10 1 100 IF - Forward Current (mA) Fig. 10 - Collector Base Current vs. Forward Current Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE = 10 V hFE - DC Current Gain IC - Collector Current (mA) 100 10 1 0.1 800 VCE = 10 V 600 5V 400 200 0 0.01 0.1 96 11904 1 10 0.01 100 95 10973 IF - Forward Current (mA) 100 IF = 50 mA 20 mA 10 10 mA 5 mA 1 2 mA 1 mA 0.1 0.1 96 11905 1 10 100 VCE - Collector Emitter (V) Fig. 12 - Collector Current vs. Collector Emitter Voltage www.vishay.com 144 0.1 1 10 100 IC - Collector Current (mA) Fig. 14 - DC Current Gain vs. Collector Current CTR - Current Transfer Ratio (%) Fig. 11 - Collector Current vs. Forward Current IC - Collector Current (mA) 100 10 IC - Collector Current (mA) 95 10972 1000 VCE = 20 V 100 10 1 0.1 95 10976 1 10 100 IF - Forward Current (mA) Fig. 15 - Current Transfer Ratio vs. Forward Current For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83530 Rev. 2.0, 26-Oct-09 4N25V, 4N25GV, 4N35V, 4N35GV 50 Saturated operation VS = 5 V RL = 1 k 40 30 toff 20 10 ton 0 0 95 10974 5 10 20 ton/toff - Turn-on/Turn-off Time (s) ton/toff - Turn-on/Turn-off Time (s) Optocoupler, Phototransistor Output Vishay Semiconductors 15 toff 10 ton 5 0 20 15 Non-saturated operation VS = 10 V RL = 100 0 IF - Forward Current (mA) Fig. 16 - Turn-on/off Time vs. Forward Current 2 4 6 8 10 IC - Collector (mA) 95 10975 Fig. 17 - Turn-on/off Time vs. Collector Current PACKAGE DIMENSIONS in millimeters DIP-6 7.62 typ. 7.12 0.3 3.5 0.3 6.5 0.3 2.8 0.5 4.5 0.3 4.5 0.3 0.5 0.1 0.25 1.2 0.1 6 5 4 7.62 to 9.5 typ. 1 2 3 14771_2 DIP-6, 400 mil 7.62 typ. 7.12 0.3 3.5 0.3 6.5 0.3 0.5 0.1 4.5 0.3 2.8 0.5 4.5 0.3 0.25 1.2 0.1 10.16 (typ.) 6 14771_1 5 4 1 2 3 PACKAGE MARKING 4N25 V YWW 24 21764-32 Document Number: 83530 Rev. 2.0, 26-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 145 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1