Vishay Siliconix
DG411/412/413
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
www.vishay.com
1
Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES
• 44 V Supply Max Rating
• ± 15 V Analog Signal Range
• On-Resistance - rDS(on): 25 Ω
• Fast Switching - tON: 110 ns
• Ultra Low Power - PD: 0.35 µW
• TTL, CMOS Compatible
• Single Supply Capability
BENEFITS
• Widest Dynamic Range
• Low Signal Errors and Distortion
• Break-Before-Make Switching Action
• Simple Interfacing
APPLICATIONS
• Precision Automatic Test Equipment
• Precision Data Acquisition
• Communication Systems
• Battery Powered Systems
• Computer Peripherals
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and
military applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411 and DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN1IN2
D1D2
S1S2
V- V+
GND VL
S4S3
D4D3
IN4IN3
Dual-In-Line and SOIC
Top View
S1S2
V- V+
NC NC
GND VL
S4S3
LCC
NC IN3D3
D4IN4
NC IN2D2
D1IN1
Key
910111213
4
5
6
7
8
1231920
14
15
16
17
18
DG411 DG411
TRUTH TABLE
Logic DG411 DG412
0 ON OFF
1OFFON
Top View
S
1
S
2
V- V+
NC NC
GND V
L
S
4
S
3
LCC
NC IN
3
D
3
D
4
IN
4
NC IN
2
D
2
D
1
IN
1
Key
910111213
4
5
6
7
8
1231920
14
15
16
17
18
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND V
L
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line and SOIC
DG413 DG413
TRUTH TABLE
Logic SW1, SW4SW2, SW3
0 OFF ON
1ONOFF
Available
Pb-free
RoHS*
COMPLIANT
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2
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Vishay Siliconix
DG411/412/413
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
ORDERING INFORMATION
Temp Range Package Part Number
DG411/DG412
- 40 to 85 °C
16-Pin Plastic DIP
DG411DJ
DG411DJ-E3
- 40 to 85 °C
DG412DJ
DG412DJ-E3
16-Pin Narrow SOIC
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413
- 40 to 85 °C
16-Pin Plastic DIP DG413DJ
DG413DJ-E3
16-Pin Narrow SOIC
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
V+ to V- 44
V
GND to V- 25
VL(GND - 0.3) to (V+) + 0.3
Digital Inputsa, VS, VD
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100
Storage Temperature (AK, AZ Suffix) - 65 to 150 °C
(DJ, DY Suffix) - 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc470
mW
16-Pin Narrow SOICd600
16-Pin CerDIPe900
LCC-20e900
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
www.vishay.com
3
Vishay Siliconix
DG411/412/413
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 VfTempb Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Mind MaxdMind Maxd
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance rDS(on)
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Room
Full
25 35
45
35
45 Ω
Switch Off Leakage Current
IS(off) V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
Room
Full
± 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
nA
ID(off) Room
Full
± 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
Channel On Leakage Current ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
± 0.1 - 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
Digital Control
Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 µA
Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5
Dynamic Characteristics
Tu r n - On T im e tON RL = 300 Ω, CL = 35 pF
VS = ± 10 V, See Figure 2
Room
Full
110 175
240
175
220
ns
Turn-Off Time tOFF Room
Full
100 145
160
145
160
Break-Before-Make
Time Delay tD
DG413 Only, VS = 10 V
RL = 300 Ω, CL = 35 pF Room 25
Charge Injection Q Vg = 0 V, Rg = 0 Ω
CL = 10 nF Room 5 pC
Off IsolationeOIRR RL = 50 Ω, CL = 5 pF,
f = 1 MHz
Room 68
dB
Channel-to-Channel
CrosstalkeXTALK Room 85
Source Off CapacitanceeCS(off)
f = 1 MHz
Room 9
pF
Drain Off CapacitanceeCD(off) Room 9
Channel On CapacitanceeCD(on) Room 35
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Room
Full
0.0001 1
5
1
5
µA
Negative Supply Current I- Room
Full
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current ILRoom
Full
0.0001 1
5
1
5
Ground Current IGND Room
Full
- 0.0001 - 1
- 5
- 1
- 5
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Vishay Siliconix
DG411/412/413
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS FOR UNIPOLAR SUPPLIESa
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 VfTempb Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Mind MaxdMind Maxd
Analog Switch
Analog Signal RangeeVANALOG Full 12 12 V
Drain-Source
On-Resistance rDS(on)
V+ = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Room
Full
40 80
100
80
100 Ω
Dynamic Characteristics
Tur n -On Ti m e tON RL = 300 Ω, CL = 35 pF
VS = 8 V, See Figure 2
Room
Hot
175 250
400
250
315
ns
Turn-Off Time tOFF Room
Hot
95 125
140
125
140
Break-Before-Make
Time Delay tD
DG413 Only, VS = 8 V
RL = 300 Ω, CL = 35 pF Room 25
Charge Injection Q Vg = 6 V, Rg = 0 Ω, CL = 10 nF Room 25 pC
Power Supplies
Positive Supply Current I+
V+ = 13.5 V, VIN = 0 or 5 V
Room
Hot
0.0001 1
5
1
5
µA
Negative Supply Current I- Room
Hot
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current ILRoom
Hot
0.0001 1
5
1
5
Ground Current IGND Room
Hot
- 0.0001 - 1
- 5 - 5
On-Resistance vs. VD and Power Supply Voltage
VD – Drain Voltage (V)
- 20 - 15 - 10 - 5 0 5 10 15 20
45
40
35
30
25
20
15
10
5
0
50
rDS(on) Drain-Source On-Resistance (Ω)
TA = 25 °C ± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
On-Resistance vs. VD and Unipolar Supply Voltage
0 2 4 6 8 101214161820
0
50
100
150
200
250
300
DS(on)
(Ω)
V
VL = 5 V
V+ = 3 V
VL = 3 V
8 V
V+ = 5 V
12 V 15 V 20 V
VD – Drain Voltage (V)
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
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Vishay Siliconix
DG411/412/413
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Leakage Current vs. Analog Voltage
Charge Injection vs. Analog Voltage
Input Switching Threshold vs. Supply Voltage
(pA)
I, I
SD
VD or VS – Drain or Source Voltage (V)
30
10
- 40
- 60
- 15 - 10 - 5 0 5 10 15
20
0
- 50
- 30
- 10
- 20
V+ = 15 V
V- = - 15 V
VL = 5 V
TA = 25 °C ID(off)
IS(off)
ID(on)
Q (pC)
VS – Source Voltage (V)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
V+ = 15 V
V- = - 15 V
VL = 5 V
CL = 10 nF
CL = 1 nF
(V)
TH
V
3.5
3.0
5 10152025303540
2.5
2.0
1.5
1.0
0.5
0
(V+)
6.5 V
5.5 V
VL = 7.5 V
4.5 V
ID, IS Leakages vs. Temperature
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature
- 15 - 10 - 5 0 5 10 15
5
10
15
20
25
30
35
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
85 °C
25 °C
- 55 °C
rDS(on) – Drain-Source On-Resistance (Ω)
V
D
– Drain V oltage (V)
VD – Drain Voltage (V)
Q (pC)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
120
140
V+ = 15 V
V- = - 15 V
VL = 5 V CL = 10 nF
CL = 1 nF
Temperature (°C)
(ns)tON
,t
OFF
240
180
120
60
0
- 55 - 35 - 15 5 25 45 65 85 105 125
210
150
90
30
V+ = 15 V
V- = - 15 V
VL = 5 V
VS = 10 V
tOFF
tON
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Vishay Siliconix
DG411/412/413
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
TEST CIRCUITS
Supply Current vs. Input Switching Frequency
f – Frequency (Hz)
I SUPPL Y
100 mA
10 mA
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
100 1 k 10 k 100 k 1 M 10 M
I+, I-
I
L
V+ = 15 V
V- = - 15 V
V
L
= 5 V
= 1 SW
= 4 SW
10
Figure 1.
Level
Shift/
Drive
VIN
VL
S
V+
GND
V-
D
V-
V+
Figure 2. Switching Time
0 V
Logic
Input
Switch
Input*
Switch
Output
3 V
50 %
0 V
Switch
Input*
V
S
t
r
< 20 ns
t
f
< 20 ns
90 %
-V S
t
ON
t
ON
V
O
90 %
V
O
*V
S
= 10 V for t
ON
, V
S
= - 10 V for t
OFF
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
C
L
(includes fixture and stray capacitance)
V+
IN
R
L
R
L
+ r
DS(on)
V
O
= V
S
S D
- 15 V
V
O
GND
± 10 V
V
L
C
L
35 pF
V-
R
L
300 Ω
+ 15 V + 5 V
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
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Vishay Siliconix
DG411/412/413
TEST CIRCUITS
Figure 3. Break-Before-Make (DG413)
0 V
Logic
Input
Switch
Switch
Output
3 V
50 %
0 V
Output
0 V
90 %
V
O2
V
O1
90 %
V
S1
V
S2
t
D t
D
V
O2
C
L
(includes fixture and stray capacitance)
V+
S
2
V-
S
1
V
L
V
S2
IN
2
D
2
V
S1
R
L2
300 Ω
D
1 V
O1
C
L2
35 pF
- 15 V
GND
+ 5 V + 15 V
R
L1
300 Ω C
L1
35 pF
IN
1
Figure 4. Charge Injection
CL
10 nF
D
Rg
VO
V+
S
V-
3 V
IN
VL
Vg
- 15 V
GND
+ 15 V+ 5 V
OFFONOFF
OFFONOFF
VO
ΔVO
INX
INX
Q = ΔVO x CL
INX dependent on switch configuration Input polarity determined
by sense of switch.
Figure 5. Crosstalk
0 V, 2.4 V
S1
XTA L K Isolation = 20 log
VS
VO
D2
C = RF bypass
RL
D1
S2
VS
0 V, 2.4 V
IN150 Ω
VO
IN2
Rg = 50 Ω
VLV+
- 15 V
GND V-
NC
C
+ 15 V
C+ 5 V C
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Document Number: 70050
S-71241–Rev. E, 25-Jun-07
Vishay Siliconix
DG411/412/413
APPLICATIONS
Single Supply Operation:
The DG411/412/413 can be operated with unipolar supplies
from 5 V to 44 V. These devices are characterized and tested
for unipolar supply operation at 12 V to facilitate the majority
of applications. In single supply operation, V+ is tied to VL
and V- is tied to 0 V. See Input Switching Threshold vs.
Supply Voltage curve for VL versus input threshold
requirments.
Summing Amplifier
When driving a high impedance, high capacitance load such
as shown in Figure 8, where the inputs to the summing
amplifier have some noise filtering, it is necessary to have
shunt switches for rapid discharge of the filter capacitor, thus
preventing offsets from occurring at the output.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70050.
Figure 6. Off Isolation
RL
50 Ω
D
0 V, 2.4 V
V+
Rg = 50 Ω
- 15 V
GND V- C
VS
Off Isolation = 20 log VS
VO
IN
VLVO
+ 5 V
C
+ 15 V
S
C
C = RF Bypass
Figure 7. Source/Drain Capacitances
D
IN
S
VLV+
- 15 V
GND V- C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
+ 5 V
C
+ 15 V
C
Figure 8. Summing Amplifier
+
–
DG413
R1R2
C1
R3R4
C2
R6
R5
VIN 1
VIN 2
VOUT
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
