FGH40N60SMD_F085 600V, 40A Field Stop IGBT Features General Description * Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for easy parallel operating * High current capability * Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A * High input impedance * Tightened Parameter Distribution Applications * RoHS compliant * Automotive chargers, Converters, High Voltage Auxiliaries * Qualified to Automotive Requirements of AEC-Q101 * Inverters, SMPS,PFC, UPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF IFM(1) PD TJ Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current 25oC Diode Forward Current @ TC = Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds Ratings Units 600 V 20 V 80 A 40 A 120 A 40 A 20 A 120 A 349 W 174 W -55 to +175 o -55 to +175 oC C 300 o Ratings Units C Thermal Characteristics Symbol Parameter o RJC(IGBT) ( 2) Thermal Resistance, Junction to Case 0.43 RJC(Diode) Thermal Resistance, Junction to Case 1.8 oC/W Typ. Units 45 oC/W Symbol RJA Parameter Thermal Resistance, Junction to Ambient (PCB Mount)(2) (c)2013 Fairchild Semiconductor Corporation FGH40N60SMD_F085 Rev. C1 1 C/W www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT December 2013 Device Marking Device Package Packing Type Qty per Tube FGH40N60SMD FGH40N60SMD_F085 TO-247 Tube 30ea For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - 0.6 - V/oC - - 250 ICES at 80%*BVCES, 175 C - - 800 A VGE = VGES, VCE = 0V - - 400 nA IC = 250uA, VCE = VGE Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V o IGES G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 40A, VGE = 15V - 1.9 2.5 V IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 2500 pF VCE = 30V, VGE = 0V, f = 1MHz - 180 240 pF - 50 65 pF - 18 24 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 28 36.4 ns td(off) Turn-Off Delay Time - 110 143 ns tf Fall Time - 13.2 18.5 ns Eon Turn-On Switching Loss - 0.92 1.2 mJ Eoff Turn-Off Switching Loss - 0.3 0.39 mJ Ets Total Switching Loss - 1.22 1.59 mJ td(on) Turn-On Delay Time - 16.7 23.8 ns tr Rise Time - 27 35.1 ns td(off) Turn-Off Delay Time - 116 151 ns tf Fall Time - 56.5 81 ns Eon Turn-On Switching Loss - 1.47 1.91 mJ Eoff Turn-Off Switching Loss - 0.73 0.95 mJ Ets Total Switching Loss - 2.20 2.86 mJ VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 175oC Notes: 1:Repetitive rating: Pulse width limited by max junction temperature. 2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements. JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. FGH40N60SMD_F085 Rev. C1 2 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Package Marking and Ordering Information Symbol Qg Parameter Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V Electrical Characteristics of the Diode Symbol (Continued) Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge FGH40N60SMD_F085 Rev. C1 Min. Typ. Max Units - 119 180 nC - 13 20 nC - 58 90 nC Units TC = 25C unless otherwise noted Test Conditions IF = 20A IF =20A, dIF/dt = 200A/s 3 Min. Typ. Max TC = 25oC - 2.3 2.8 TC = 175oC - 1.67 - TC = 175oC - 48.9 - TC = 25oC V uJ - 36 47 TC = 175oC - 110 - TC = 25oC - 46.8 61 TC = 175oC - 470 - ns nC www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 120 VGE= 20V 10V 15V 100 Collector Current, IC [A] Collector Current, IC [A] 80 60 40 8V 80 60 8V 40 20 20 T C = 175oC TC = 25oC 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 100 100 Collector Current, IC [A] 120 80 60 40 Common Emitter VGE = 15V T C = 25oC 20 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 10 Figure 4. Transfer Characteristics 120 Collector Current, IC [A] 10V 15V 100 0 12V VGE= 20V 12V Common Emitter VCE = 20V o TC = 25 C o TC = 175 C 80 60 40 20 o T C = 175 C 0 0 0 1 2 3 4 Collector-Emitter Voltage, V CE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Gate-Emitter Voltage,V GE [V] 12 20 Common Emitter VGE = 15V Common Emitter Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] 2 Figure 6. Saturation Voltage vs. VGE 3 80A 2 40A I C = 20A 1 25 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH40N60SMD_F085 Rev. C1 0 T C = -40oC 16 80A 12 40A 8 IC = 20A 4 0 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 80A 12 40A 8 IC = 20A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Common Emitter Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] 20 o TC = 175 C 16 80A 12 40A 8 0 20 Figure 9. Capacitance Characteristics IC =20A 4 4 20 Figure 10. Gate charge Characteristics 15 4000 Gate-Emitter Voltage, V GE [V] Capacitance [pF] Cies 1000 Coes C res Common Emitter VGE = 0V, f = 1MHz 100 12 VCC = 200V 9 6 3 Common Emitter o TC = 25 C T C = 25 C 1 400V 300V o 50 8 12 16 Gate-Emitter Voltage, VGE [V] 10 Collector-Emitter Voltage, V CE [V] 0 30 Figure 11. SOA Characteristics 0 50 Gate Charge, Qg [nC] 100 120 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 300 tr 10 s 100s Switching Time [ns] Collector Current, Ic [A] 100 10 ms 10 1ms DC *Notes: 1 o 1. TC = 25 C td(on) 10 Common Emitter VCC = 400V, VGE = 15V I C = 40A o T C = 25 C 2. TJ 175oC 3. Single Pulse o T C = 175 C 1 0.1 1 10 100 Collector-Emitter Voltage, V CE [V] FGH40N60SMD_F085 Rev. C1 1000 5 0 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 100 10000 Common Emitter VCC = 400V, VGE = 15V IC = 40A tr o Switching Time [ns] Switching Time [ns] TC = 25 C o 1000 TC = 175 C td(off) 100 tf td(on) 10 Common Emitter VGE = 15V, RG = 6 o TC = 25 C o TC = 175 C 10 0 10 20 30 40 Gate Resistance, RG [] 1 20 50 40 60 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 100 Common Emitter VCC = 400V, VGE = 15V Switching Loss [mJ] Switching Time [ns] I C = 40A td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 TC = 25oC 10 o TC = 175 C Eon 1 Eoff o TC = 25 C o TC = 175 C 1 20 40 60 0.1 80 0 Figure 17. Switching Loss vs. Collector Current 20 30 40 50 Figure 18. Turn off Switching SOA Characteristics 200 10 Common Emitter VGE = 15V, RG = 6 100 o Collector Current, IC [A] Eon TC = 25 C Switching Loss [mJ] 10 Gate Resistance, RG [] Collector Current, IC [A] TC = 175oC 1 Eoff 10 Safe Operating Area o VGE = 15V, TC 175 C 0.1 20 40 60 1 80 Collector Current, IC [A] FGH40N60SMD_F085 Rev. C1 1 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency 120 90 Square Wave 110 80 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6W 70 90 Collector Current, IC [A] Collector Current, I C [A] 100 60 50 40 30 20 80 70 40 30 20 10 0 0 0 1k 25 50 75 100 125 150 175 o Collector-Emitter Case temperature, T C [ C] Figure 21. Forward Characteristics 1M 1000 Reverse Current ICES [uA] Forward Current, IF [A] 10k 100k Switching Frequency, f [Hz] Figure 22. Reverse Current 100 o TC = 175 C 10 o TC = 25 C TC = 175oC 100 T C = 100oC 10 1 0.1 TC = 25oC 0.01 0 1 2 Forward Voltage, V F [V] 3 0 Figure 23. Stored Charge 600 TC = 175oC 400 300 di/dt = 200A/ s 200 600 200 o TC = 25 C 500 200 400 Collector to Emitter Voltage, VCES [V] Figure 24. Reverse Recovery Time Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] o Tc = 100 C 50 10 1 o Tc = 75 C 60 di/dt = 100A/ s 100 TC = 25oC di/dt = 100A/s o TC = 175 C 150 200A/ s 100 50 di/dt = 100A/ s 200A/s 0 0 5 10 15 20 25 30 35 Forwad Current, IF [A] FGH40N60SMD_F085 Rev. C1 40 0 45 0 5 10 15 20 25 30 35 40 45 Forward Current, IF [A] 7 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Typical Performance Characteristics FGH40N60SMD_F085 600V 40A Field Stop IGBT Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.5 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH40N60SMD_F085 Rev. C1 8 www.fairchildsemi.com FGH40N60SMD_F085 600V 40A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40N60SMD_F085 Rev. C1 9 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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