2000. 12. 8 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB772
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
ᴌComplementary to KTD882.
MAXIMUM RATING (Ta=25ᴱ)
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.1 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
14.0 MIN
2.3 0.1
0.75 0.15
1.6
3.4 MAX
B
123
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
* Pulse Test : Pulse Widthᴪ350ỌS, Duty Cycleᴪ2% Pulsed
Note: hFE(2) Classification O:100ᴕ200 , Y:160ᴕ320 , GR:200ᴕ400
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC-3
A
Pulse (Note) ICP -7
Base Current (DC) IB-0.6 A
Collector Power
Dissipation
Ta=25ᴱPC
1.5
W
Tc=25ᴱ10
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 ỌA
Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 ỌA
DC Current Gain *
hFE(1) VCE=-2V, IC=-20mA 30 220 -
hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400
Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.3 -0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A - -1.0 -2.0 V
Current Gain Bandwidth Product fTVCE=-5V, IC=-0.1A - 80 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 55 - pF
Note : Pulse Width ⏊10mS, Duty Cycle⏊50%.