Packaged PIN Diodes MA4P100 thru 600 Series Features High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs @ Wide Variety of Hermetic Packages High Reliability for Space/Military Applications Description M/A-COMs product line of packaged PIN diodes repre- sents a comprehensive combination of PIN diode electri- cal characteristics and package outlines. This union of semiconductor and packaging technology gives consider- able design flexibility to the PIN diode circuit designer. The fast switching speed PIN diodes utilize thin I-region silicon dioxide passivated chips that incorporate careful control of semiconductor processing. These diodes achieve consistent performance in control circuit applica- tions. The packaged CERMACHIP PIN diodes employ M/A-COMs unique hard glass passivated, hermetically sealed PIN diode chip. The packaged CERMACHIP PIN diodes are designed for use in high power and high RF voltage applications. The PIN diode chips are bonded into hermetically sealed ceramic or glass packages that are designed for high volume, close tolerance utilization. Packages are available which are suitable for mounting in a variety of microwave and RF circuit media. The packaged silicon PIN diode series has high inherent reliability and is capable of meeting stringent environ- mental tests. These diodes may be ordered with testing to selected reliability levels. Ordering Information Packaged PIN diode specifications are listed in the appro- priate tables. The standard package style is indicated as part of the model number; i.e., MA4P506-30. Alternative package styles for the diodes are also indicated. To order, indicate the desired model number by indicating the chip model number and desired package style; i.e., CERMACHIP is a trademark of M/A-COM, Inc. Specifications Subject to Change Without Notice. 3-48 V 2.00 = ~~ bf MA4P506-258. Note that the specification tables lists total diode capacitance in the standard case style only. The total capacitance for the diode in an alternative package are computed from the difference in package capacitance. Parts are available only in the case styles as indicated in each product table. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Packaged PIN Diodes MA4P100 thru 600 Series V 2.00 50 to 250 Volt, Fast Switching PIN Diodes Specifications Ta = +25C Maximum4 Nominal Characteristics Mimimum Maximum? Rg Maximum Reverse Capacitance @10mA Thermal Carrier> |-Region Model! Voltage Vp Cy @ 10V 500 MHz Resistance Lifetime Trr Width Number (Volts) (pF) (ohms) CCM) (ns) (ns) (microns) MA4P 102-30 50 0.30 2.0 60 20 3 7 MA4P202-30 100 0.25 25 60 60 5 12 MA4P203-30 100 0.35 1.5 30 100 20 12 MA4P303-30 200 0.35 15 30 200 60 20 MA4P404-30 250 0.40 0.6** 20 1000 100 30 * At 50 Volts ** At 50mA, 100 MHz The standard case style is 30. Also available in the following packages: 31, 32, 36, 94, 111, 120, 186, 255, 276, 1056 and 1088. See Appendix for full dimensions and nominal parasitic values. 30 31, 32, 94 36 111 al EE | 186 276 1056 1088 120, 255 L SMQ General Purpose Switching Diodes Specifications Ta = +25C Minimum2 | Maximum Maximum? Typical Typical? Typical Power Reverse Capacitance | Resistance | Current for Carrier -Region Dissipation Model Case* Voltage Vq Cr @ 50V Ip @ 10 mA Rg = 75Q Lifetime Thickness Rating Number Style (Volts) (pF) (Ohms) (mA) (us) (mils) (watts) MA4PH235 1072 35 1.2 0.5 _ 0.3 0.4 1.0 MA4PH236 1072 200 0.5 3.0 _ 1.5 2.0 1.0 MA4PH237 1079 . 200 15 0.6 _ 3.0 3.0 2.0 MA4PH238 1072 200 0.5 6.0 0.3 - 0.6 2.0 4.0 1.0 MA4PH239 1079 200 0.8 25.0 1.2-2.4 6.0 14.0 2.0 Available only in case styles indicated. See Appendix for full dimensions. Notes: 1. The diodes are available in chip form for integrated circuits. Case Styles 1072, 1079 2. The maximum reverse current is 10 pA at voltage rating. 3. Capacitance is specified at 1 MHz. 4. Resistance is specified at 100 MHz unless otherwise indicated. N 5. Nominal carrier lifetime is specified at 10 mA. Specifications Subject to Change Without Notice. M/A-COM, Inc. 3-49 North America: Tel. (800) 366-2266 Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Packaged PIN Diodes MA4P100 thru 600 Series 500 Volt CERMACHIP PIN Diodes Specifications TA = +25C V 2.00 Minimum? Maximum? Maximum4 Maximum Nominal Characteristics Reverse Capacitance Rs Thermal Carrier> I-Region Modet! Voitage Vp Cr @ 100V @ 100 mA Resistance Lifetime Width Number (Volts) (pF) (Ohms) (CNW) (us) (mils) MA4P504-30 500 0.40 0.60 20 1.0 2 MA4P505-30 500 0.55 0.45 15 2.0 MA4P506-30 500 0.90 0.30 10 3.0 2 The standard case style is 30. Also available in the following packages: 31, 32, 36, 111, 255, 258 (isolated Heatsink), 1056, 1088. See Appendix for full dimensions and nominal parasitic values. 30 31 36 oe 111 255 258 ed Td on SMQ CERMACHIP High Voltage PIN Diodes Specifications TA = +25C Minimum? Maximum? Maximum4 Typical Typical Power Reverse Capacitance Rs Carrier |-Region Dissipation Model Case* Voltage Vp Cr @VR=100V); @ 100mA Lifetime Thickness Rating Number Style (Volts) (pF) (Ohms) (ys) (mils) (Watts) MA4P504-1072 1072 500 0.5 0.6 1.0 2.0 15 MA4P505-1072 1072 500 0.65 0.45 2.0 2.0 1.5 MA4P506-1072 1072 500 1.0 0.3 3.0 2.0 1.5 "See Appendix for full dimensions. rp 1072 Notes: 1. The diodes are available in chip form for integrated circuits. 2. The maximum reverse current is 10 pA at voltage rating. 3. Capacitance is specified at 1 MHz. 4, Resistance is specified at 100 MHz unless otherwise indicated. 5. Nominal carrier lifetime is specified at 10 mA. Specifications Subject to Change Without Notice. 3-50 M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Packaged PIN Diodes 1000 Voit CERMACHIP PIN Diodes Specifications TA = +25C MA4P100 thru 600 Series V 2.00 Maximum4 Nominal Characteristics Minimum2 Maximum? Rg Maximum Reverse Capacitance @ Forward Thermal Carrier I-Region Model! Voltage Vp Cr @ 100V Current Resistance Lifetime Width Number (Volts) (pF) (Ohms) ccm) (us) (mils) MA4P604-30 1000 0.50 1.00 @ 100 20 3.0 4 MA4P606-30 1000 0.80 0.70 @ 100 10 4.0 4 MA4P607 1000 2.00 0.40 @ 100 7 5.0 4 MA4P608-43 1000 3.20 0.35 @ 150 5 5.0 4 The standard case styles are indicated as a suffix to the model number. See Appendix for full dimensions. The MA4P604 and MA4P606 are available only in case style 30. The MA4P607 is available only in case styles 43 and 296. Add case style suffix to model number. The MA4P608 is available only in case style 43. 30, 296 = I | I 1 | 1 a 1500 Volt CERMACHIP PIN Diode Specifications Ta = +25C Maximum4 Nominal Characteristics Minimum? Maximum? Rs Maximum Reverse Capacitance @ Forward Thermal Carrier5 I-Region Model Voltage Vy Cr @ 100V Current Resistance Lifetime Width Number (Volts) (pF) (Ohms) CCM) (uS) (mits) MA4P709-150 1500 3.3 0.25 @ 200 2 10 7 The standard case style is 150. Also available in 985 (Isolated heatsink). See Appendix for full dimensions. 150 985 Notes: . 1. The diodes are available in chip form for integrated circuits. 2. The maximum reverse current is 10 pA at voltage rating. 3. Capacitance is specified at 1 MHz. 4. Resistance is specified at 100 MHz unless otherwise indicated. 5. Nominal carrier lifetime is specified at 10 mA. Specifications Subject to Change Without Notice. M/A-COM, Inc. 3-51 North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Packaged PIN Diodes Maximum Ratings Parameter Absolution Max. Voltage Voltage Rating Operating Temperature - 65C to +175C Storage Temperature - 65C to +200C Operating & Storage - 65C to +125C Temp. Case Sty. 1088 (Plastic) Power Dissipation Cathode Heat Sinked Packages (Case Styles 30, 31, 32, 36, 94, 111, 120, 150, 258, 985, 1072, 1079) Paiss = "(max. operating) * 29C Thermal Resistance Leaded Packages @ +25C Pyiss = 250MW (Case Styles 186, 276, 1088) Surface Mount Package Pyisg = 3OOMW (Case Style 1056) Environmental Ratings Per MIL-STD 750 The following table is recommended for Group B and C testing for TX, TXV level screening. Method Level Storage Temperature 1031 See maximum ratings Operating Temperature -- See maximum ratings Temperature Cycling 1051 5 cycles-65 to + 150C Shock 2016 500 g's Vibration 2056 1159's Constant Acceleration 2006 20,000 gs Humidity 1021 10 days Specifications Subject to Change Without Notice. 3-52 MA4P100 thru 600 Series V 2.00 Maximum Soldering Temperature Case Style 150, 186, 258, 985, 188: 200C maximum for 5 seconds. Case Style 120, 255, 276: 200C maximum for 5 seconds cathode only. Case Style 30, 31, 32, 36, 43, 94, 111, 296: 225C maximum for 5 seconds. Case Style 1088: 150C maximum for 5 seconds, imm from the case. Screened Diodes (MIL-STD 750) Suggested 100% preconditioning and screening program for TX level and TXV level screening. Inspection Method Condition Internal Visual and/or Xray 2072/2076 See note High Temp. Storage 1032 48 hours minimum @ max. storage temp. Thermal Shock 1051 10 Cycles Constant Acceleration 2006 20,000 g's, Y1 Fine Leak 1071 H Gross Leak 1071 Core Electrical _ See note Burn-in 1038 See note Note: Conditions and details of test depend on specific model number. Information available upon request. The case styles 1056 and 1088 are not military (MIL-STD-750 rated packages). M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 mw Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Packaged PIN Diodes MA4P100 thru 600 Series V 2.00 Typical Resistance Curves FORWARD CURRENT vs SERIES RESISTANCE FORWARD CURRENT vs SERIES RESISTANCE (MA4P202, MA4P203, MA4P303, MA4P404 AND MA4P102) (MA4P504, MA4P505, MA4P506) 1000 1000 @ 100 ~ g g 8 : o p 100 I o MA4P203 a 4 10.0 a 3 : a MA4P303 <10.0 a 2B MA4P102 a e a) 2 1.0 c x W 1.0 a oi a MA4P404 0.1 10uA 100uA 1mA 10mA 100 mA Gin 100uA.sdT ma 10mA.100.mA FORWARD CURRENT (I_) FORWARD CURRENT {Ip} FORWARD CURRENT vs SERIES RESISTANCE FORWARD CURRENT vs SERIES RESISTANCE (MA4P604, MA4P606, MA4P607, MA4P608) (MA4P709, MA4P902) __ 1000 @ 1000 n =x z S = im 100 ; o 3 2 z < < & & 10.0 @ 10.0 % 4 i) x z= 1.0 8 1.0 w a a MA4P608 0.1 10uA 100 nA TmA 10 mA FORWARD CURRENT (I_) 0.1 100 mA 500 mA 10zpA 100A 1mA 10maA = 100 mA 1A FORWARD CURRENT (1) Specifications Subject to Change Without Notice. M/A-COM, Inc. 3-53 North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +81 (03) 3226-1671 a Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020