VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 1Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY2853 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
•3D TV
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
22689
VSMY2853RG
2268
9
VSMY2853G
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY2853RG 35 ± 28 850 10
VSMY2853G 35 ± 28 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY2853RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMY2853G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 2Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV190 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature acc. figure 7, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21890
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21891
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.65 1.9 V
IF = 1 A, tp = 100 μs VF2.9 V
Temperature coefficient of VF
IF = 1 mA TKVF -1.45 mV/K
IF = 10 mA TKVF -1.3 mV/K
Reverse current IRnot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie20 35 50 mW/sr
IF = 1 A, tp = 100 μs Ie300 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe55 mW
Temperature coefficient of radiant
power IF = 100 mA TKφe-0.35 %/K
Angle of half intensity ϕ± 28 deg
Peak wavelength IF = 100 mA λp840 850 870 nm
Spectral bandwidth IF = 30 mA Δλ 30 nm
Temperature coefficient of λpIF = 30 mA TKλp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr10 ns
Fall time IF = 100 mA, 20 % to 80 % tf10 ns
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 3Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
tp = 100 µs
IF - Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
0.001 0.01 0.1 1
0.1
1
10
100
1000
t
p
= 100 µs
λ - Wavelength (nm)
21776-1
Φe, rel - Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
I
F
= 30 mA
22688
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 4Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY2853RG
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 5Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY2853G
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 6Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853RG
VSMY2853RG, VSMY2853G
www.vishay.com Vishay Semiconductors
Rev. 1.2, 27-Mar-14 7Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853G
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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