SD103AWS thru SD103CWS Vishay Semiconductors New Product formerly General Semiconductor Schottky Diodes SOD-323 .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) .006 (0.15) max. .004 (0.1) max. .059 (1.5) .043 (1.1) .049 (1.25) max. Dimensions in inches and (millimeters) .010 (0.25) min. Features * For general purpose applications. * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with the type designations LL103A to LL103C, DO-35 case with the type designations SD103A to SD103C and SOD-123 case with type designations SD103AW to SD103CW. Mechanical Data Case: SOD-323 plastic case Weight: approximately 0.004g Marking SD103AWS = S6 Code: SD103BWS = S7 SD103CWS = S8 Packaging Codes/Options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box Maximum Ratings and Thermal Characteristics (T Parameter C = 25C unless otherwise noted) Symbol Value Unit VRRM 40 30 20 V Power Dissipation (Infinite Heat Sink) Ptot 150 (1) mW Maximum Single Cycle Surge 10s Square Wave IFSM 2 A Peak Inverse Voltage SD103AWS SD103BWS SD103CWS Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range RJA Tj TS 650 (1) 125 (1) -55 to +150 C/W C (1) C Note: (1) Valid provided that electrodes are kept at ambient temperature Document Number 88246 13-May-02 www.vishay.com 1 SD103AWS thru SD103CWS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit IR VR = 30V VR = 20V VR = 10V -- -- -- -- -- -- 5 5 5 A Forward Voltage Drop VF IF = 20mA IF = 200mA -- -- -- -- 0.37 0.6 V Junction Capacitance Ctot VR = 0V f = 1MHz -- 50 -- pF trr IF = IR = 50mA to 200mA recover to 0.1IR -- 10 -- ns Leakage Current SD103AWS SD103BWS SD103CWS Reverse Recovery Time Ratings and Characteristic Curves (T A www.vishay.com 2 = 25C unless otherwise noted) Document Number 88246 13-May-02 SD103AWS thru SD103CWS Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88246 13-May-02 www.vishay.com 3