SD103AWS thru SD103CWS
Vishay Semiconductors
for merly General Semiconductor
Document Number 88246 www.vishay.com
13-May-02 1
New Product
Schottky Diodes
Features
• For general pur pose applications.
• The SD103 ser ies is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications.
• This diode is also available in the MiniMELF case
with the type designations LL103A to LL103C,
DO-35 case with the type designations SD103A to
SD103C and SOD-123 case with type designations
SD103AW to SD103CW.
Maximum Ratings and Thermal Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Inverse Voltage SD103AWS 40
SD103BWS VRRM 30 V
SD103CWS 20
Power Dissipation (Infinite Heat Sink) Ptot 150(1) mW
Maximum Single Cycle Surge 10µs Square Wave IFSM 2A
Thermal Resistance Junction to Ambient Air RθJA 650(1) °C/W
Junction Temperature Tj125(1) °C
Storage Temperature Range TS–55 to +150 (1) °C
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Mechanical Data
Case: SOD-323 plastic case
Weight: approximately 0.004g
Marking SD103AWS = S6
Code: SD103BWS = S7
SD103CWS = S8
Packaging Codes/Options:
D5/10K per 13”reel (8mm tape), 30K/box
D6/3K per 7”reel (8mm tape), 30K/box
.006 (0.15)
max.
.010 (0.25)
min.
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.049 (1.25)
max.
Cathode Band
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
0.055
(1.40) 0.062
(1.60)
0.047 (1.20)
Mounting Pad Layout
SOD-323
Dimensions in inches
and (millimeters)
SD103AWS thru SD103CWS
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88246
213-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
SD103AWS VR= 30V —— 5
Leakage Current SD103BWS IRVR = 20V —— 5µA
SD103CWS VR = 10V —— 5
F orward Voltage Drop VFIF = 20mA ——0.37 V
IF= 200mA ——0.6
Junction Capacitance Ctot VR= 0V —50 —pF
f = 1MHz
Reverse Recover y Time trr IF= IR = 50mA to 200mA —10 —ns
recover to 0.1IR
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
SD103AWS thru SD103CWS
Vishay Semiconductors
for merly General Semiconductor
Document Number 88246 www.vishay.com
13-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
µ
