DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
DISCRETE SEMICONDUCTORS
BSR15; BSR16
PNP switching transistors
2004 Jan 13 2
NXP Semiconductors Product data sheet
PNP switching transistors BSR15; BSR16
FEATURES
•High current (max. 600 mA)
•Low voltage (max. 60 V).
APPLICATIONS
•Medium power switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: BSR13 and BSR14.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BSR15 T7*
BSR16 T8*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BSR15 −plastic surface mounted pa ckage; 3 leads SOT23
BSR16
2004 Jan 13 3
NXP Semiconductors Pr oduct data shee t
PNP switching transistors BSR15; BSR16
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter − −60 V
VCEO collector-emitter voltage open base
BSR15 − −40 V
BSR16 − −60 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −600 mA
ICM peak collector current − −800 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 13 4
NXP Semiconductors Pr oduct data shee t
PNP switching transistors BSR15; BSR16
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
BSR15 IE = 0; VCB = −50 V − −20 nA
IE = 0; VCB = −50 V; Tj = 150 °C− −20 µA
collector cut-off current
BSR16 IE = 0; VCB = −50 V − −10 nA
IE = 0; VCB = −50 V; Tj = 150 °C− −10 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA
hFE DC current gain IC = −0.1 mA; VCE = −10 V
BSR15 35 −
BSR16 75 −
DC current gain IC = −1 mA; VCE = −10 V
BSR15 50 −
BSR16 100 −
DC current gain IC = −10 mA; VCE = −10 V
BSR15 75 −
BSR16 100 −
DC current gain IC = −150 mA; VCE = −10 V; note 1 100 300
DC current gain IC = −500 mA; VCE = −10 V; note 1
BSR15 30 −
BSR16 50 −
VCEsat collector-emitter saturation
voltage IC = −150 mA; IB = −15 mA − −400 mV
IC = −500 mA; IB = −50 mA − −1.6 V
VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA − −1.3 V
IC = −500 mA; IB = −50 mA − −2.6 V
Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −8pF
Ceemitter cap a citance IC = ic = 0; VEB = −2 V; f = 1 MHz −30 pF
fTtransition freque ncy IC = −50 mA; VCE = −20 V; f = 100 MHz 200 −MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA −40 ns
tddelay time −12 ns
trrise time −30 ns
toff turn-off time −365 ns
tsstorage time −300 ns
tffall time −65 ns
2004 Jan 13 5
NXP Semiconductors Pr oduct data shee t
PNP switching transistors BSR15; BSR16
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
2004 Jan 13 6
NXP Semiconductors Pr oduct data shee t
PNP switching transistors BSR15; BSR16
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 13 7
NXP Semiconductors Pr oduct data shee t
PNP switching transistors BSR15; BSR16
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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consequenc es of use of such information.
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not form p ar t o f an y q uot ation or co ntract, is believed to b e a ccur ate and reliable an d may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12421
