ES2A thru ES2M 2.0 Amps. Super Fast Surface Mount Rectifiers SYNSEM! SEMICONDUCTOR Voltage Range 50 to 1000 Volts Forvard Current 2.0 Amperes Features @ Glass passivated junction chip @ For surface mounted application @ Low profile package @ Built-in strain relief @ Ideal for automated placement @ Easy pick and place @ Superfast recovery time for high efficiency DO-214AA (SMB) @ Glass passivated chip junction @ High temperature soldering: oe 250C/10 seconds at terminals E76{1.83) _ ft @ Plastic material used carries Underwriters Laboratory i | 4743.73) Classification 94V-0 t | | Sse q Mechanical Data Ter 35) 2 @ Cases: Molded plastic 008 @ Terminals: Solder plated me @ Polarity: Indicated by cathode band i \ @ Weight: 0.003 ounce, 0.093 gram ora Bat | ' =e (D064 15 OBG{1AT) | _ I sais 635(0.90) Soa 10) Lew 215(5,48) a 207(5.28) Maximum Ratings and Electrical Characteristics Ratings at 2c ambient temperature unless cthensise specified. Single phase, half waye, G@OHz, resistive or indudive bad. For capadtive load, derate current by 209% Dimensions in inches and (millimeters) ES ES Es ES ES ES ES Es ES - Eeraiete! Symbols | 24 | 2B | 2c 2D 2F 2G | 2 2k | an [| Uns Maximum repetitive peak reverse voltage Misi 5 400 160 20g 300 400 goo B00 qooo Volts Mlasiroum RMS voltage Wie 36 Fo 105 140 #10 280 420 56d Fo Volts Mlasiroum CC Bleeking voltage Vow 50 100 160 20) 300 400 6od aod 1a08 Valts Maximum average fonyard rectified current See Fig. 1 Kany 20 Arps Peak fonvard sume current, 8.3rmes single half sine-wave superinpe sed on rated load esi 50.0 Amps HEDEC Method) Masimurn instantaneous torvand voltage @ 2.04, Ve 0.96 14 VW Volts Masimum OG reverse current @T,=25C 70.0 wh, at rated OC blocking voltage i T,=100C k 350 uA Maximum reverse recovery time (Mote 13 1 36 ns Typieal junction capacitance (Mete 2) C, 25 20) pF Typical thennal resistance (Mote ah Foun a oly Ra Operating tarnperature range Tj -65 to +760 aS Storage temperature range Teas -66 te +760) i Notes: = 1. Reverse Recovery Test Conditions: |=0.54, .=1.04, .=0.254 2. Measured at1 MHz and Applied =4.0 Volts 3. Units Mounted on P.C.B. 6.02 5.0rnm (0.01 Srim thids) Pac AreasRATINGS AND CHARACTERISTIC CURVES ES2A thru ES2M (T, =26C unless othenwise notech AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS FORWARD CURRENT. (A) JUNCTION GAPACITANIGE (pF) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 30 T T RESISTIVE OR INDUCTIVE LOAD 0.2X0.2(5.0%5. mm) OOPPER PAD AREAS 20 Ty ag ao 706 10 4120 430 140 150 LEAD TEMPERATURE. ["C} o FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS T2oG PULSE WIDTH-300uS 1% DUTY CYCLE om o4 o8 o8 10 12 14 16 1.8 FORWARD VOLTAGE. (} FIG.5- TYPICAL JUNCTION CAPACITANCE 2 ToT ttl Tj=255C 50 Ps 1.0MHz i SQ Veig=50rn\'p-p 40 Pe _ NA | 30 & nt i het ha a = 10 ers pa inh G o 1 10 1b0 REVERSE VOLTAGE. [V} PEAS FORWARD SURGE CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. (HA) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 T TT TT 6.3ms Single Halt Sine Wave (JEDEC Method) at TL=120C _ | | 50 40 = a Png p 2 oe 1 10 10 NUMBER OF CYCLES AT BOHZ FiG.4- TYPICAL REVERSE CHARACTERISTICS 1000 = 2 a = o + o . om a 20 40 60 ao 100) 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)