Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON POWER TRANSISTOR CD13003
TO-126
MARKING: CD
13003
Applications.
Suitable for Lighting, Switching Regulator and Motor Control.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 600 V
Collector -Emitter ( sus) Voltage VCEO 400 V
Emitter -Base Voltage VEBO 9.0 V
Collector Current Continuous IC 1.5 A
Peak (1) ICM 3.0 A
Base Current Continuous IB 0.75 A
Peak (1) IBM 1.5 A
Emitter Current Continuous IE 2.25 A
Peak (1) IEM 4.5 A
Power Dissipation @ Ta=25 deg C PD 1.4 W
Derate Above 25 deg C 11.2 mW /deg C
Power Dissipation @ Tc=25 deg C PD 45 W
Derate Above 25 deg C 320 mW /deg C
Operating And Storage Junction Tj, Tstg -65 to +150 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth (j-c) 3.12 deg C/W
Junction to Ambient Rth (j-a) 89 deg C/W
Maximum Lead Temperature for
Soldering Purposes: 1/8" from Case
for 5 Seconds. TL 275 deg C
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Base Voltage VCBO IC=1mA, IE=0 600 - - V
Collector -Emitter ( sus) Voltage VCEO(sus)* IC=10mA, IB=0 400 - - V
Collector-Cuttoff Current ICBO VCB=600V, IE=0 - - 1.0 mA
VCB=600V, IE=0,TC=100 deg C - - 5.0 mA
Emitter-Cuttoff Current IEBO VEB=9V, IC=0 - - 1.0 mA
DC Current Gain hFE* IC=0.5A,VCE=5V 8.0 - 40
IC=2A,VCE=5V 5.0 - 25
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 3