SIGC156T120R2CS - Infineon Technologies AG

SIGC156T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7181-T, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for:

• IGBT Modules

FEATURES:

• 1200V NPT technology 175µm chip

• low turn-off losses

• short tail current

• positive temperature coefficient

• easy paralleling

• integrated gate resistor

Applications:

• drives, SMPS, resonant

applications

Chip Type VCE ICn Die Size Package Ordering Code

SIGC156T120R2CS

1200V

100A 12.59 X 12.59 mm2

sawn on foil Q67050-

A4085-A003

MECHANICAL PARAMETER:

Raster size 12.59 X 12.59

Emitter pad size 8 x (3.98 x 2.38)

Gate pad size 1.46 x 0.8

Area total / active 158.5 / 132.6

mm2

Thickness 180 µm

Wafer size 150 mm

Flat position 90 grd

Max.possible chips per wafer 82 pcs

Passivation frontside Photoimide

Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, <500µm

Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm

Recommended Storage Environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC156T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7181-T, Edition 2, 03.09.2003

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 1200 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 300 A

Gate emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -55 ... +150 °C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=5mA 1200

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=100A 2.7 3.2 3.7

Gate-emitter threshold voltage VGE(th) IC=4mA , VGE=VCE 4.5 5.5 6.5

Zero gate voltage collector current ICES VCE=1200V , VGE=0V 12 µA

Gate-emitter leakage current IGES VCE=0V , VGE=20V 600 nA

Integrated gate resistor RGint 5 7 Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss 6.5

Output capacitance Coss 1

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz 0.5

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter Symbol Conditions 1) min. typ. max. Unit

Turn-on delay time td(on) 0.13

Rise time tr 0.06

Turn-off delay time td(off) 0.36

Fall time tf

Tj=125°C

VCC=600V,

IC=100A,

VGE=-15/15V,

RG= 5.6 Ω 0.03

µs

1) values also influenced by parasitic L- and C- in measurement and package.

SIGC156T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7181-T, Edition 2, 03.09.2003

CHIP DRAWING:

SIGC156T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7181-T, Edition 2, 03.09.2003

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet Eupec FS100R12KS4

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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