IRFB4615PbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 21A, di/dt ≤ 549A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V(BR)DSS Drain-to-Source Breakdown Volta
e 150 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.19 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 32 39 mΩ
VGS(th) Gate Threshold Volta
e 3.0 ––– 5.0 V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
RG(int) Internal Gate Resistance ––– 2.7 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
fs Forward Transconductance 35 ––– ––– S
QgTotal Gate Char
e ––– 26
Qgs Gate-to-Source Char
e ––– 8.6 –––
Qgd Gate-to-Drain ("Miller") Char
e ––– 9.0 –––
Qsync Total Gate Char
e Sync. (Qg - Qgd)––– 17 –––
td(on) Turn-On Delay Time ––– 15 –––
trRise Time ––– 35 –––
td(off) Turn-Off Delay Time ––– 25 –––
tfFall Time ––– 20 –––
Ciss Input Capacitance ––– 1750 –––
Coss Output Capacitance ––– 155 –––
Crss Reverse Transfer Capacitance ––– 40 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
h
––– 179 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
g
––– 382 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
c
VSD Diode Forward Volta
e ––– ––– 1.3 V
trr Reverse Recovery Time ––– 70 ––– TJ = 25°C VR = 100V,
––– 83 ––– TJ = 125°C IF = 21A
Qrr Reverse Recovery Char
e ––– 177 ––– TJ = 25°C di
dt = 100A
µs
––– 247 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 4.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 21A
ID = 21A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 75V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 50V
ƒ = 1.0MHz (See Fig.5)
VGS = 0V, VDS = 0V to 120V
h
(See Fig.11)
VGS = 0V, VDS = 0V to 120V
g
TJ = 25°C, IS = 21A, VGS = 0V
f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
c
VGS = 10V, ID = 21A
f
VDS = VGS, ID = 100µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
ID = 21A
RG = 7.3Ω
VGS = 10V
f
VDD = 98V
ID = 21A, VDS =0V, VGS = 10V
pF
A
––– –––
––– –––
µA
nA
nC
ns
ns
nC
35
140